Preliminary HAT3008R, HAT3008RJ Silicon N / P Channel Power MOS FET High Speed Power Switching REJ03G1198-0500 Rev.5.00 Aug 25, 2009 Features • • • • For Automotive Application (at Type Code “J”) Low on-resistance Capable of 4 V gate drive High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) 7 8 D D 65 87 2 G 12 5 6 D D 4 G 1, 3 2, 4 5, 6, 7, 8 34 S1 Nch Source Gate Drain S3 Pch Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT3008R HAT3008RJ Avalanche energy HAT3008R HAT3008RJ Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. 2. 3. 4. Symbol VDSS VGSS ID Note 1 ID (pulse) IDR IAP Note 4 EAR Note 4 Note 2 Pch Pch Note 3 Tch Tstg Value Pch –60 ±20 5 40 5 — 5 — 2.14 –3.5 –28 –3.5 — –3.5 — 1.05 A A A — A — mJ 2 3 150 –55 to +150 2 3 150 –55 to +150 W W °C °C PW ≤ 10 μs, duty cycle ≤ 1% 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s Value at Tch = 25°C, Rg ≥ 50 Ω REJ03G1198-0500 Rev.5.00 Aug 25, 2009 Page 1 of 11 Unit Nch 60 ±20 V V HAT3008R, HAT3008RJ Preliminary Electrical Characteristics N Channel (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current HAT3008R Zero gate voltage drain current HAT3008RJ Zero gate voltage drain current HAT3008R HAT3008RJ Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 5. Pulse test REJ03G1198-0500 Rev.5.00 Aug 25, 2009 Page 2 of 11 Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr Min 60 ±20 — — — — — 1.2 — — 6 — — — — — Typ — — — — — — — — 0.043 0.056 9 520 270 100 11 40 Max — — ±10 1 0.1 — 10 2.2 0.058 0.084 — — — — — — Unit V V μA μA μA μA μA V Ω Ω S pF pF pF ns ns td (off) tf VDF trr — — — — 110 80 0.84 40 — — 1.1 — ns ns V ns IDSS IDSS IDSS Test Conditions ID = 10 mA, VGS = 0 IG = ±100 μA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 48 V, VGS = 0 Ta = 125°C VDS = 10 V, ID = 1 mA ID = 3 A, VGS = 10 V Note 5 ID = 3 A, VGS = 4 V Note 5 ID = 3 A, VDS = 10 V Note 5 VDS = 10 V VGS = 0 f = 1 MHz VGS = 10 V, ID = 3 A VDD ≅ 30 V IF = 5 A, VGS = 0 Note 5 IF = 5 A, VGS = 0 diF/dt = 50 A/μs HAT3008R, HAT3008RJ Preliminary P Channel (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current HAT3008R Zero gate voltage drain current HAT3008RJ Zero gate voltage drain current HAT3008R HAT3008RJ Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 6. Pulse test REJ03G1198-0500 Rev.5.00 Aug 25, 2009 Page 3 of 11 Symbol V (BR) DSS V (BR) GSS IGSS IDSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) Min –60 ±20 — — — — — –1.2 — — 3 — — — — — — Typ — — — — — — — — 0.12 0.16 4.5 600 290 75 11 30 100 Max — — ±10 –1 –0.1 — –10 –2.2 0.15 0.23 — — — — — — — Unit V V μA μA μA μA μA V Ω Ω S pF pF pF ns ns ns tf VDF trr — — — 55 –0.98 70 — –1.28 — ns V ns IDSS IDSS Test Conditions ID = –10 mA, VGS = 0 IG = ±100 μA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –60 V, VGS = 0 VDS = –48 V, VGS = 0 Ta = 125°C VDS = –10 V, ID = –1 mA ID = –2 A, VGS = –10 V Note 6 ID = –2 A, VGS = –4 V Note 6 ID = –2 A, VDS = –10 V Note 6 VDS = –10 V VGS = 0 f = 1 MHz VGS = –10 V, ID = –2 A VDD ≅ –30 V IF = –3.5 A, VGS = 0 Note 6 IF = –3.5 A, VGS = 0 diF/dt = 50 A/μs HAT3008R, HAT3008RJ Preliminary Main Characteristics N Channel Maximum Safe Operation Area Power vs. Temperature Derating 100 3.0 ive Op er ion at Dr ive 1.0 er Op 1 0 Drain Current Dr 2.0 0 50 at ion 10 μs 30 ID (A) Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 2 Channel Dissipation Pch (W) 4.0 10 10 3 1 0.3 0.1 Ambient Temperature 0.01 0.1 200 150 s Ta = 25°C 1 shot Pulse 0.3 1 3 10 Drain to Source Voltage Ta (°C) 0μ s =1 0m Op s er (1 at sh ion ot) ( P Operation in W N ≤ 1 ot this area is 0 e7 s) limited by RDS (on) DC 0.03 100 1m PW 30 100 VDS (V) Note 7: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) Typical Transfer Characteristics Typical Output Characteristics 10 V 4V 3.5 V (A) 3V VDS = 10 V Pulse Test 8 ID 8 10 Pulse Test 6 6 4 2.5 V 2 Drain Current Drain Current ID (A) 10 4 25°C Tc = 75°C 2 –25°C VGS = 2 V 0 0 0 2 4 6 Drain to Source Voltage 8 10 0 0.4 0.3 ID = 5 A 0.2 2A 0.1 1A 0 0 4 8 12 Gate to Source Voltage 16 20 VGS (V) REJ03G1198-0500 Rev.5.00 Aug 25, 2009 Page 4 of 11 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 2 Gate to Source Voltage VDS (V) 0.5 1 1.0 Pulse Test 0.5 0.2 0.1 VGS = 4 V 0.05 10 V 0.02 0.01 0.1 0.3 1 3 Drain Current 10 30 ID (A) 100 Preliminary Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (Ω) HAT3008R, HAT3008RJ 0.20 Pulse Test 0.16 0.12 1 A, 2 A ID = 5 A VGS = 4 V 0.08 0.04 1 A, 2 A, 5 A 10 V 0 –40 0 40 80 Case Temperature 120 Tc 160 50 20 Tc = –25°C 10 5 25°C 2 75°C 1 VDS = 10 V Pulse Test 0.5 0.1 2 5 10 2000 1000 Capacitance C (pF) 200 100 50 20 10 di / dt = 50 A / μs VGS = 0, Ta = 25°C 0.5 1 2 5 Crss 50 VGS = 0 f = 1 MHz 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics VGS VDS 12 VDD = 10 V 25 V 50 V 40 20 8 4 VDD = 50 V 25 V 10 V 0 8 16 Gate Charge 24 0 32 Qg (nc) REJ03G1198-0500 Rev.5.00 Aug 25, 2009 Page 5 of 11 40 1000 Switching Time t (ns) 16 VGS (V) Reverse Drain Current IDR (A) 80 0 Coss 100 10 ID = 5 A 60 200 10 0.2 20 100 Ciss 500 20 Gate to Source Voltage Reverse Recovery Time trr (ns) 1 Typical Capacitance vs. Drain to Source Voltage 500 5 0.1 VDS (V) 0.5 Drain Current ID (A) (°C) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage 0.2 300 td(off) 100 tf 30 tr td(on) 10 3 1 0.1 VGS = 10 V, VDD = 30 V PW = 5 μs, duty ≤ 1 % 0.2 0.5 1 Drain Current 2 ID (A) 5 10 HAT3008R, HAT3008RJ Preliminary Reverse Drain Current vs. Source to Drain Voltage Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current IDR (A) 10 8 10 V 6 5V VGS = 0, –5 V 4 2 Pulse Test 0 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 2.5 IAP = 5 A VDD = 25 V L = 100 μH duty < 0.1 % Rg ≥ 50 Ω 2.0 1.5 1.0 0.5 0 25 50 100 125 150 Channel Temperature Tch (°C) VSD (V) Avalanche Test Circuit Avalanche Waveform L VDS Monitor 75 1 • L • IAP2 • 2 EAR = VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg VDD D.U.T VDS ID Vin 15 V 50 Ω 0 VDD Switching Time Test Circuit Switching Time Waveform 90% Vout Monitor Vin Monitor D.U.T. Vin 10% RL Vout Vin 10 V 50 Ω VDD = 30 V 10% 90% td(on) REJ03G1198-0500 Rev.5.00 Aug 25, 2009 Page 6 of 11 10% tr 90% td(off) tf HAT3008R, HAT3008RJ Preliminary P Channel Power vs. Temperature Derating Dr 2.0 ive er at ion Op at 1.0 ive er Dr Op 1 ion 50 100 150 Ambient Temperature 10 200 0μ s 1m s –10 –3 PW = 10 Op ms era tio n( Operation in PW N o ≤ 1 te 8 this area is 0s limited by RDS (on) ) DC –1 –0.3 –0.1 –0.03 Ta = 25°C 1 shot pulse –0.01 –0.1 –0.3 –1 0 0 10 μs –30 Drain Current 3.0 –100 ID (A) Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 2 Channel Dissipation Pch (W) 4.0 Maximum Safe Operation Area –3 –10 –30 –100 Drain to Source Voltage VDS (V) Ta (°C) Note 8: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) Typical Transfer Characteristics Typical Output Characteristics –10 –10 V –5 V –4 V –8 –3.5 V Pulse Test ID (A) ID (A) –10 –3 V –4 –2 VGS = –2.5 V 0 0 –2 –4 –6 –0.4 –0.3 ID = –2 A –0.2 –1 A –0.1 –0.5 A 0 –4 –8 –12 Gate to Source Voltage –2 –16 –20 VGS (V) REJ03G1198-0500 Rev.5.00 Aug 25, 2009 Page 7 of 11 –25°C –1 –2 –3 –4 Gate to Source Voltage –5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage VDS (on) (V) Pulse Test 25°C Tc = 75°C VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage –0.5 –4 0 0 –10 –8 Drain to Source Voltage 0 –8 –6 Drain Current Drain Current –6 VDS = 10 V Pulse Test 1 Pulse Test 0.5 VGS = –4 V 0.2 0.1 –10 V 0.05 0.02 0.01 –0.1 –0.3 –1 –3 Drain Current –10 –30 ID (A) –100 Preliminary Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (Ω) HAT3008R, HAT3008RJ 0.5 Pulse Test 0.4 ID = –2 A –1 A 0.3 –0.5 A VGS = –4 V 0.2 –2 A 0.1 –0.5 A, –1 A –10 V 0 –40 0 40 80 Case Temperature 120 160 20 10 Tc = –25°C 5 25°C 2 75°C 1 0.5 VDS = 10 V Pulse Test 0.2 –0.1 –0.2 Tc (°C) –5 –10 2000 VGS = 0 f = 1 MHz 1000 200 Capacitance C (pF) Reverse Recovery Time trr (ns) –2 Typical Capacitance vs. Drain to Source Voltage 500 100 50 20 di / dt = 50 A / μs VGS = 0, Ta = 25°C 10 5 –0.1 –0.2 Ciss 500 100 50 –1 –2 –5 0 –10 –8 VGS VDS –12 VDD = –50 V –25 V –10 V –80 –16 –100 0 8 16 Gate Charge 24 32 Qg (nc) REJ03G1198-0500 Rev.5.00 Aug 25, 2009 Page 8 of 11 –30 –40 –50 –20 40 1000 Switching Time t (ns) –4 VGS (V) ID = –3.5 A Gate to Source Voltage –40 –20 Switching Characteristics 0 VDD = –10 V –25 V –50 V –10 Drain to Source Voltage VDS (V) IDR (A) 0 –60 Crss 20 Dynamic Input Characteristics –20 Coss 200 10 –0.5 Reverse Drain Current VDS (V) –1 Drain Current ID (A) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage –0.5 300 td(off) 100 tf 30 tr td(on) 10 3 V = –10 V, V = –30 V GS DD PW = 5 μs, duty ≤ 1 % 1 –0.1 –0.2 –0.5 –1 –2 Drain Current ID (A) –5 –10 HAT3008R, HAT3008RJ Preliminary Reverse Drain Current vs. Source to Drain Voltage Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current IDR (A) –10 –8 –6 10 V VGS = 0, 5 V –4 5V –2 Pulse Test 0 0 –0.4 –0.8 –1.2 –1.6 Source to Drain Voltage –2.0 2.5 IAP = –3.5 A VDD = –25 V L = 100 μH duty < 0.1 % Rg ≥ 50 Ω 2.0 1.5 1.0 0.5 0 25 50 100 125 150 Channel Temperature Tch (°C) VSD (V) Avalanche Test Circuit Avalanche Waveform L VDS Monitor 75 EAR = 1 • L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg VDD D.U.T VDS ID Vin –15 V 50 Ω 0 VDD Switching Time Test Circuit Switching Time Waveform Vin Vout Monitor Vin Monitor 10% D.U.T. 90% RL 90% 90% Vin –10 V 50 Ω VDD = –30 V Vout td(on) REJ03G1198-0500 Rev.5.00 Aug 25, 2009 Page 9 of 11 10% tr 10% td(off) tf HAT3008R, HAT3008RJ Preliminary Common Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) 10 1 D=1 0.5 0.1 0.2 0.1 θch – f (t) = γ s (t) • θch – f 0.05 0.01 θch – f = 125°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) 0.02 0.01 0.001 ot pu D= PDM lse PW T h 1s 0.0001 10 μ 100 μ PW T 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) 10 1 D=1 0.5 0.1 0.2 0.1 θch – f (t) = γ s (t) • θch – f θch – f = 166°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) 0.05 0.01 0.02 0.01 0.001 0.0001 10 μ D= PDM e uls tp PW T ho 1s 100 μ PW T 1m 10 m 100 m 1 Pulse Width PW (S) REJ03G1198-0500 Rev.5.00 Aug 25, 2009 Page 10 of 11 10 100 1000 10000 HAT3008R, HAT3008RJ Preliminary Package Dimensions JEITA Package Code P-SOP8-3.95 × 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g F Package Name SOP-8 *1 D bp 1 c *2 E Index mark HE 5 8 4 Z Terminal cross section (Ni/Pd/Au plating) * 3 bp x M NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. e Reference Symbol A1 A L1 L y HE e x y Z L L1 Detail F Ordering Information Part Name HAT3008R-EL-E HAT3008RJ-EL-E Quantity 2500 pcs 2500 pcs REJ03G1198-0500 Rev.5.00 Aug 25, 2009 Page 11 of 11 Shipping Container Taping Taping D E A2 A1 A bp b1 c c1 Dimension in Millimeters Min Nom Max 4.90 5.3 3.95 0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25 0° 8° 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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