RQM2201DNS Silicon N Channel MOS FET Power Switching REJ03G1492-0200 Rev.2.00 Apr 16, 2007 Features • • • • • Small, thin and leadless type package (3 × 3 mm, t = 0.8 mm max.) Two FET chips are mounted in one package High density mounting High speed switching. (Ciss = 200 pF typ) VDSS ≥ 60 V and capable of 2.5 V gate drive Outline RENESAS Package code: PWSN0006ZA-A (Package name: WSON0303-6 <HWSON-6>) FET No.1 (Nch) FET No.2 (Nch) 6 D 6 5 2 G 1 4 4 5 D 3 2 4 G 1, 3: Source 2, 4: Gate 5, 6: Drain 1 (Bottom view) S 1 Notes: S 3 1. Marking is “M2201“. 2. The following maximum ratings and electric characteristics are applied to both FET1 and FET2. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) Note1 Ratings 60 ±12 2 8 Unit V V A A IDR Pch Note2 Pch Note3 Tch Tstg 2 1 1.5 150 –55 to +150 A W W °C °C Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. 1 Drive operation: When using the glass epoxy board (FR-4 40 × 40 × 1 mm) 3. 2 Drive operation: When using the glass epoxy board (FR-4 40 × 40 × 1 mm) REJ03G1492-0200 Rev.2.00 Apr 16, 2007 Page 1 of 7 RQM2201DNS Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Gate to source leak current Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Symbol V(BR)DSS V(BR)GSS V(BR)GSS IGSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Min 60 +12 –12 — — — 0.4 — — 2.3 — — — — — — — Typ — — — — — — — 173 207 3.5 200 25 13 7 28 30 4 Max — — — +10 –10 1 1.4 225 290 — — — — — — — — Unit V V V µA µA µA V mΩ mΩ S pF pF pF ns ns ns ns Total gate charge Gate to Source charge Gate to drain charge Body - drain diode forward voltage Qg Qgs Qgd VDF — — — — 2.4 0.4 0.4 0.8 — — — — nC nC nC V Notes: 4. Pulse test REJ03G1492-0200 Rev.2.00 Apr 16, 2007 Page 2 of 7 Test conditions ID = 10 mA, VGS = 0 IG = +100 µA, VDS = 0 IG = –100 µA, VDS = 0 VGS = +10 V, VDS = 0 VGS = –10 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 1 A, VGS = 4.5 V Note4 ID = 1 A, VGS = 2.5 V Note4 ID = 1 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz ID = 1 A VGS = 10 V RL = 10 Ω Rg = 4.7 Ω VDD = 10 V VGS = 4.5 V ID = 2 A IF = 2 A, VGS = 0 Note4 RQM2201DNS Main Characteristics Maximum Channel Power Dissipation Curve Maximum Safe Operation Area 10 µs 10 0 10 1.8 µs O pe Op n 0.4 tio ive ra Dr er 0.2 25 50 0.1 Operation in this area is limited by RDS(on) at ion Ta = 25°C 1 Shot Pulse 0 0 ion at ive 1 0.6 er Dr 1 0.8 1 Op 1.2 DC Drain Current ID (A) 1.4 0.01 0.01 75 100 125 150 175 200 3.4 V 6 2.4 V 2.2 V Pulse Test Tc = 25°C 2.0 V 1.8 V 2 3.5 3.0 V 2.8 V 2.6 V 1.6 V 0 2 4 6 8 3 2.5 2 1.5 1 Tc = 75°C 25°C 0.5 VGS = 1.4 V 0 100 VDS = 10 V Pulse Test 3.2 V 8 10 V 4 10 4 4V Drain Current ID (A) Drain Current ID (A) 10 1 Typical Transfer Characteristics (1) Typical Output Characteristics 3.6 V 0.1 Drain to Source Voltage VDS (V) Ambient Temperature Ta (°C) *When using the glass epoxy board (FR-4: 40 × 40 × 1 mm) 3.8 V s m s 1 m 10 1.6 2 Channel Dissipation Pch (W) 2 0 10 Drain to Source Voltage VDS (V) –25°C 0 0.5 1 1.5 2 2.5 Gate to Source Voltage VGS (V) 1 Drain Current ID (A) VDS = 10 V Pulse Test 0.1 0.01 Tc = 75°C 0.001 25°C 0.0001 –25°C 0.00001 0 0.5 1 1.5 Gate to Source Voltage VGS (V) REJ03G1492-0200 Rev.2.00 Apr 16, 2007 Page 3 of 7 2 Gate to Source Cutoff Voltage VGS(off) (V) Gate to Source Cutoff Voltage vs. Typical Transfer Characteristics (2) Case Temperature 1.2 ID = 10 mA 1 0.8 0.6 1 mA 0.4 0.2 0.1 mA VDS = 10 V Pulse Test 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) 0.6 Pulse Test Tc = 25°C 0.5 0.4 2A 0.3 1.5 A 0.2 1A 0.1 0.5 A 0 0 2 4 6 8 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 1 Pulse Test Tc = 25°C VGS = 2.5 V 0.1 4.5 V 10 V 0.01 0.1 1 10 Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature Static Drain to Source on State Resistance vs. Case Temperature Drain to Source on State Resistance RDS(on) (mΩ) Gate to Source Voltage VGS (V) 500 450 400 ID = 2 A 350 1.5 A 300 250 200 1A 150 0.5 A 100 Pulse Test VGS = 4.5 V 50 –25 0 25 50 75 100 125 150 ID = 2 A 400 1.5 A 350 300 250 1A 200 0.5 A 150 100 50 0 –25 0 25 50 75 100 125 150 Forward Transfer Admittance vs. Drain Current Zero Gate Voltage Drain current vs. Case Temperature Pulse Test VDS = 10 V –25°C 25°C 0.1 0.1 Pulse Test VGS = 2.5 V 450 Case Temperature Tc (°C) 10 1 500 Case Temperature Tc (°C) IDSS (nA) 0 Tc = 75°C 1 Drain Current ID (A) REJ03G1492-0200 Rev.2.00 Apr 16, 2007 Page 4 of 7 10 Zero Gate Voltage Drain current Forward Transfer Admittance |yfs| (S) Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage VDS(on) (V) RQM2201DNS 10000 1000 Pulse Test VGS = 0 V VDS = 60 V 100 10 1 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) RQM2201DNS 16 ID = 2.0 A 60 12 VDD = 10 V 25 V 50 V 40 20 8 4 VDD = 50 V 25 V 10 V 1 0 2 3 0 4 1000 VGS = 4.5 V, VDD = 10 V Rg = 4.7 Ω, duty ≤ 1 % Switching Time t (ns) 80 Switching Characteristics Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Dynamic Input Characteristics td(on) tr 0.1 10 1 Typical Capacitance vs. Drain to Source Voltage Input Capacitance vs. Gate to Source Voltage 450 100 Coss Crss 10 400 Ciss2 (pF) Ciss, Coss, Crss (pF) 10 Drain Current ID (A) 1 0 10 350 300 250 VGS = 0 V f = 1 MHz 20 30 40 50 VDS = 0 V f = 1 MHz 200 –10 –8 –6 –4 –2 0 60 2 4 6 8 10 Gate to Source Voltage VGS (V) Reverse Drain Current vs. Source to Drain Voltage Body-Drain Diode Forward Voltage vs. Case Temperature 8 6 4.5 V 2.5 V VGS = 0 V 2 Pulse Test 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) REJ03G1492-0200 Rev.2.00 Apr 16, 2007 Page 5 of 7 Body-Drain Diode Forward Voltage VSDF (V) Drain to Source Voltage VDS (V) 10 Reverse Drain Current IDR (A) td(off) Gate Charge Qg (nc) Ciss1 0 tf 1 0.01 5 1000 4 100 0.7 VGS = 0 0.6 0.5 ID = 10 mA 0.4 0.3 1 mA 0.2 0.1 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) RQM2201DNS Switching Time Test Circuit 90% Vout Monitor Vin Monitor Rg Switching Time Waveform D.U.T. RL Vin Vout Vin 10 V VDD = 10 V 10% 10% 90% td(on) REJ03G1492-0200 Rev.2.00 Apr 16, 2007 Page 6 of 7 10% tr 90% td(off) tf RQM2201DNS Package Dimensions JEITA Package Code P-HWSON6-3x3-0.80 Package Name HWSON-6 RENESAS Code PWSN0006ZA-A Previous Code MASS[Typ.] 0.022 g e1 D A e1 /2 b2 Lp2 E Lp1 e e /2 b1 B Reference Symbol A2 A Seating plane c y S b A1 S A A1 A2 b b1 b2 c D E e e1 Lp1 Lp2 y Dimension in Millimeters Min 0.70 0 0.70 0.35 1.10 2.90 2.90 0.55 1.75 Nom 0.20 0.40 1.15 0.20 3.00 3.00 0.80 1.60 Max 0.80 0.05 0.75 0.45 1.20 3.10 3.10 0.75 1.95 0.05 Ordering Information Part No. RQM2201DNSTL-E RQM2201DNSTR-E Quantity 2000 pcs. 2000 pcs. REJ03G1492-0200 Rev.2.00 Apr 16, 2007 Page 7 of 7 Shipping Container φ178 mm reel, 8 mm Emboss taping φ178 mm reel, 8 mm Emboss taping Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. 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