RENESAS RQK2501YGDQA

RQK2501YGDQA
Silicon N Channel MOS FET
Power Switching
REJ03G1521-0200
Rev.2.00
Nov 06, 2007
Features
• High drain to source voltage and Low gate drive
VDSS : 250 V and 2.5 V gate drive
• Low drive current
• High speed switching
• Small traditional package (MPAK)
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
D
3
2
G
1
1. Source
2. Gate
3. Drain
2
S
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
Note1
ID(pulse)
IDR
Pch Note2
Tch
Tstg
Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
REJ03G1521-0200 Rev.2.00 Nov 06, 2007
Page 1 of 7
Ratings
250
±10
0.4
1.6
0.4
0.8
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
RQK2501YGDQA
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Drain to source on state resistance
Drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
V(BR)DSS
V(BR)GSS
V(BR)GSS
IGSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Min
250
+10
–10
—
—
—
0.5
—
—
0.6
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
4.0
4.1
0.95
80
10
3
15
16
40
38
Max
—
—
—
+10
–10
1
1.5
5.4
5.6
—
—
—
—
—
—
—
—
Unit
V
V
V
µA
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
Total gate charge
Gate to Source charge
Gate to drain charge
Body - drain diode forward voltage
Qg
Qgs
Qgd
VDF
—
—
—
—
4.0
0.5
2.6
0.8
—
—
—
1.2
nC
nC
nC
V
Notes: 3. Pulse test
REJ03G1521-0200 Rev.2.00 Nov 06, 2007
Page 2 of 7
Test conditions
ID = 10 mA, VGS = 0
IG = +100 µA, VDS = 0
IG = –100 µA, VDS = 0
VGS = +8 V, VDS = 0
VGS = –8 V, VDS = 0
VDS = 250 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 0.2 A, VGS =4 V Note3
ID = 0.2 A, VGS = 2.5 V Note3
ID = 0.2 A, VDS = 10 V Note3
VDS = 25 V
VGS = 0
f = 1 MHz
VDD = 125 V,VGS = 4 V
ID = 0.2 A
RL = 625 Ω
Rg = 10 Ω
VDD = 200 V
VGS = 4 V
ID = 0.4 A
IF = 0.4 A, VGS = 0 Note3
RQK2501YGDQA
Main Characteristics
Maximum Channel Power
Dissipation Curve
Maximum Safe Operation Area
10
Channel Dissipation Pch (W)
1.0
Operation in this area
is limited by RDS(on)
Drain Current ID (A)
0.8
0.6
0.4
0.2
10 µs
1
10
1
10
0.1
DC
0
er
at
0.01
µs
s
m
s
10
Op
0
m
m
s
ion
Ta = 25°C
1 Shot Pulse
0
0.001
0
25
50
75
100
125
150
1
1000
100
10
Drain to Source Voltage VDS (V)
Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4 40 x 40 x 1 mm)
Typical Transfer Characteristics (1)
Typical Output Characteristics
1.6
1.6
Drain Current ID (A)
1.4
1.2
2.2 V
2.5 V
2.0 V
1.0
1.8 V
0.8
Pulse Test
Tc = 25°C
0.6
1.6V
0.4
1.4V
0.2
0
8
4
12
16
1.2
1.0
0.8
0.6
0.4
Tc = 75°C
25°C
0.2
–25°C
VGS = 0V
0
VDS = 10 V
Pulse Test
1.4
Drain Current ID (A)
4V
7V
10 V
0
20
Drain to Source Voltage VDS (V)
0
1
2
3
4
Gate to Source Voltage VGS (V)
0.1
Drain Current ID (A)
VDS = 10 V
Pulse Test
0.01
Tc = 75°C
0.001
25°C
0.0001
–25°C
0.00001
0
0.5
1
1.5
Gate to Source Voltage VGS (V)
REJ03G1521-0200 Rev.2.00 Nov 06, 2007
Page 3 of 7
2
Gate to Source Cutoff Voltage VGS(off) (V)
Gate to Source Cutoff Voltage vs.
Typical Transfer Characteristics (2)
Case Temperature
2.0
1.5
ID = 10 mA
1.0
1 mA
0.5
0.1 mA
VDS = 10 V
Pulse Test
0
–25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
RQK2501YGDQA
Pulse Test
Tc = 25°C
2.5
2.0
0.4 A
1.5
1.0
0.2 A
0.5
0.1 A
0
0
2
4
6
8
Drain to Source on State Resistance
RDS(on) (Ω)
3.0
Static Drain to Source on State Resistance
vs. Drain Current
10
100
Pulse Test
Tc = 25°C
10
VGS = 2.5 V
4.5 V
10 V
1
0.1
1
10
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Case Temperature (1)
Static Drain to Source on State Resistance
vs. Case Temperature (2)
Drain to Source on State Resistance
RDS(on) (Ω)
Gate to Source Voltage VGS (V)
10
8
ID = 0.4 A
6
0.2 A
4
0.1 A
2
0
Pulse Test
VGS = 4 V
–25
0
25
50
75
100 125 150
6
0.1A
4
0.2 A
2
0
–25
0
25
50
75
100 125 150
Zero Gate Voltage Drain current vs.
Case Temperature
–25°C
25°C
0.01
0.01
ID = 0.4 A
8
Forward Transfer Admittance vs.
Drain Current
Pulse Test
VDS = 10 V
0.1
Pulse Test
VGS = 2.5 V
Case Temperature Tc (°C)
10
1
10
Case Temperature Tc (°C)
Tc = 75°C
0.1
1
Drain Current ID (A)
REJ03G1521-0200 Rev.2.00 Nov 06, 2007
Page 4 of 7
10
Zero Gate Voltage Drain current IDSS (nA)
Forward Transfer Admittance |yfs| (S)
Drain to Source on State Resistance
RDS(on) (Ω)
Drain to Source Saturation Voltage
VDS(on) (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
10
1
Pulse Test
VGS = 0 V
VDS = 250 V
0.1
0.01
0.001
–25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
RQK2501YGDQA
Switching Characteristics
12
VDD = 50 V
100 V
200 V
200
ID = 0.4 A 10
Tc = 25°C
8
6
4
100
VDD = 200 V
100 V
50 V
0
0
4
6
2
0
10
8
1000
Switching Time t (ns)
300
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
tf
100
tr
td(off)
td(on)
10
0.01
0.1
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
Input Capacitance vs.
Gate to Source Voltage
420
VGS = 0 V
f = 1 MHz
380
Ciss
340
Ciss (pF)
100
10
300
260
Coss
220
VDS = 0
f = 1MHz
Crss
1
0
30
60
90
120
2
4
6
8 10
Gate to Source Voltage VGS (V)
Reverse Drain Current vs.
Source to Drain Voltage
Body-Drain Diode Forward Voltage vs.
Case Temperature
1.2
1.0
0.8
VGS = 0, –2.5, –4, –10 V
0.6
0.4
2.5, 4, 10 V
Pulse Test
0.2
Tc = 25°C
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
REJ03G1521-0200 Rev.2.00 Nov 06, 2007
Page 5 of 7
Body-Drain Diode Forward Voltage VSDF (V)
Reverse Drain Current IDR (A)
0
Drain to Source Voltage VDS (V)
1.4
0
180
–10 –8 –6 –4 –2
150
1.6
0
10
1
Gate Charge Qg (nc)
1000
Ciss, Coss, Crss (pF)
VGS = 4 V, VDD = 125 V
Rg = 10 Ω, duty ≤ 1 %
Tc = 25°C
0.7
VGS = 0
0.6
ID = 10 mA
0.5
0.4
0.3
1 mA
0.2
0.1
0
–25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
RQK2501YGDQA
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
*When using the glass epoxy board (FR-4 40 x 40 x 1 mm)
Ta = 25°C
1
D=1
0.5
0.2
0.1
0.1
0.05
θch – a(t) = γs (t) • θch – a
θch – a = 156°C/W, Ta = 25°C
0.02
0.01
0.01
lse
t pu
PDM
o
1sh
0.001
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
PW (s)
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
RL
Vin
Vout
Vin
4V
PW
T
PW
T
Pulse Width
Rg
D=
VDD
= 125 V
10%
10%
90%
td(on)
REJ03G1521-0200 Rev.2.00 Nov 06, 2007
Page 6 of 7
10%
tr
90%
td(off)
tf
RQK2501YGDQA
Package Dimensions
JEITA Package Code
SC-59A
Package Name
MPAK
RENESAS Code
PLSP0003ZB-A
D
Previous Code
MPAK(T) / MPAK(T)V
A
Q
e
E
c
HE
L
A
MASS[Typ.]
0.011g
LP
L1
A3
A
x M S
A
b
Reference Dimension in Millimeters
Symbol
Min Nom Max
e
A2
A
e1
A1
S
b
I1
c
b2
A-A Section
Pattern of terminal position areas
A
A1
A2
A3
b
c
D
E
e
HE
L
L1
LP
x
b2
e1
I1
Q
1.0
0
1.0
0.35
0.1
2.7
1.35
2.2
0.35
0.15
0.25
1.1
0.25
0.4
0.16
1.5
0.95
2.8
Part No.
Quantity
3000 pcs.
REJ03G1521-0200 Rev.2.00 Nov 06, 2007
Page 7 of 7
0.5
0.26
3.1
1.65
3.0
0.75
0.55
0.65
0.05
0.55
1.95
1.05
0.3
Ordering Information
RQK2501YGDQATL-E
1.3
0.1
1.2
Shipping Container
φ178 mm reel, 8 mm Emboss taping
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .7.0