Preliminary RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1722-0400 High Speed Power Switching Rev.4.00 Sep 29, 2009 Features • • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-A (Package name: WPAK-D2) 2 3 4 D1 D1 D1 9 S1/D2 5 6 7 8 5 6 7 8 1 G1 8 G2 9 1, 8 Gate 2, 3, 4, 9 Drain 5, 6, 7, 9 Source 4 3 2 1 4 S2 S2 S2 5 6 7 MOS1 3 2 1 (Bottom View) MOS2 and Schottky Barrier Diode Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol MOS1 MOS2 Unit VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 30 ±20 15 60 15 8 30 ±20 20 80 20 11 V V A A A A EAR Note 2 Pch Note3 Tch Tstg 6.4 10 150 –55 to +150 12.1 10 150 –55 to +150 mJ W °C °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C REJ03G1722-0400 Rev.4.00 Sep 29, 2009 Page 1 of 10 RJK0389DPA Preliminary Electrical Characteristics • MOS1 (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF Body–drain diode reverse recovery time Notes: 4. Pulse test REJ03G1722-0400 Rev.4.00 Sep 29, 2009 Page 2 of 10 trr Min 30 — — 1.2 — — — — — — — — — — — Typ — — — — 8.2 11.8 32 860 165 53 4.2 6.3 2.3 1.4 6.9 Max — ±0.1 1 2.5 10.7 16.5 — — — — — — — — — Unit V μA μA V mΩ mΩ S pF pF pF Ω nC nC nC ns — — — — — 4.1 40.8 5.6 0.84 20 — — — 1.10 — ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 7.5 A, VGS = 10 V Note4 ID = 7.5 A, VGS = 4.5 V Note4 ID = 7.5 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 15 A VGS = 10 V, ID = 7.5 A VDD ≅ 10 V RL = 1.33 Ω Rg = 4.7 Ω IF = 15 A, VGS = 0 Note4 IF =15 A, VGS = 0 diF/ dt = 100 A/μs RJK0389DPA Preliminary • MOS2 (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) Fall time Schottky Barrier diode forward voltage tf VF Body–drain diode reverse recovery time trr Notes: 4. Pulse test REJ03G1722-0400 Rev.4.00 Sep 29, 2009 Page 3 of 10 Min 30 — — 1.2 — — — — — — — — — — — — — Typ — — — — 6.8 10.5 38 1000 240 100 4.5 7.2 2.9 2.2 8.5 4.0 39 Max — ±0.1 1 2.5 8.9 14.7 — — — — — — — — — — — Unit V μA mA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns — — — 6.6 0.44 12 — — — ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID =1 mA ID = 10 A, VGS = 10 V Note4 ID = 10 A, VGS = 4.5 V Note4 ID = 10 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 20 A VGS = 10 V, ID = 10 A VDD ≅ 10 V RL = 1.0 Ω Rg = 4.7 Ω IF = 2 A, VGS = 0 Note4 IF = 20 A, VGS = 0 diF/ dt = 100 A/μs RJK0389DPA Preliminary Main Characteristics • MOS1 Maximum Safe Operation Area Power vs. Temperature Derating ID (A) 1000 15 Drain Current Channel Dissipation Pch (W) 20 10 5 100 10 Operation in this area is 1 limited by RDS(on) DC 50 100 150 Case Temperature 0.1 0.1 200 1 10 Pulse Test 3.2 V 100 VDS (V) ID (A) 16 3.0 V 12 Drain Current 12 16 VDS = 10 V Pulse Test 8 2.8 V 4 8 25°C 4 Tc = 75°C VGS = 2.6 V 2 4 6 Drain to Source Voltage 8 –25°C 10 0 1 2 3 4 Gate to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS (on) (mV) on 20 4.5 V 10 V ID (A) ati Typical Transfer Characteristics 20 Drain Current op Drain to Source Voltage Tc (°C) Typical Output Characteristics 0 s ms er Tc = 25°C 1 shot Pulse 0 1m 10 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current 100 200 Pulse Test Pulse Test 150 30 100 10 VGS = 4.5 V ID = 10 A 50 10 V 5A 3 2A 0 4 8 12 Gate to Source Voltage 16 20 VGS (V) REJ03G1722-0400 Rev.4.00 Sep 29, 2009 Page 4 of 10 1 1 3 10 30 Drain Current 100 ID 300 1000 (A) RJK0389DPA Preliminary Static Drain to Source on State Resistance vs. Temperature Typical Capacitance vs. Drain to Source Voltage 50 10000 Pulse Test 3000 Capacitance C (pF) 40 30 ID = 2 A, 5 A, 10 A 20 VGS = 4.5 V 10 1000 Ciss 300 100 30 2 A, 5 A, 10 A 10 V 0 –25 0 25 50 75 10 0 100 125 150 Case Temperature Tc (°C) 12 VDS 20 8 10 4 VDD = 25 V 10 V 0 0 0 8 16 Gate Charge 24 32 40 Qg (nc) Repetitive Avalanche Energy EAR (mJ) 10 8 6 4 2 50 75 100 125 150 Channel Temperature Tch (°C) REJ03G1722-0400 Rev.4.00 Sep 29, 2009 Page 5 of 10 30 Pulse Test 10 V 40 5V 30 20 VGS = 0, –5 V 10 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Maximum Avalanche Energy vs. Channel Temperature Derating 0 25 20 50 Reverse Drain Current IDR (A) 16 VDD = 25 V 10 V VGS (V) 20 VGS 40 30 10 Reverse Drain Current vs. Source to Drain Voltage Gate to Source Voltage VDS (V) Drain to Source Voltage ID = 15 A Crss VGS = 0 f = 1 MHz Drain to Source Voltage VDS (V) Dynamic Input Characteristics 50 Coss RJK0389DPA Preliminary Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 .02 0 0.03 D= PDM se ul p 1 0.0 hot s 1 PW T PW T 0.01 1m 100 m 10 m 1 10 Pulse Width PW (s) Avalanche Test Circuit Avalanche Waveform EAR = L VDS Monitor 1 L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg VDS VDD D. U. T ID Vin 15 V 0 VDD Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. Rg RL Vin Vout Vin 10 V 10% 10% 10% VDS = 10 V 90% td(on) REJ03G1722-0400 Rev.4.00 Sep 29, 2009 Page 6 of 10 tr 90% td(off) tf RJK0389DPA Preliminary • MOS2 and Schottky Barrier Diode Maximum Safe Operation Area Power vs. Temperature Derating ID (A) 1000 10 5 100 1 on 150 s ms ati 100 1m er 50 Case Temperature 0.1 1 shot Pulse 0.1 1 200 10 Drain to Source Voltage Tc (°C) 100 VDS (V) Typical Transfer Characteristics Typical Output Characteristics 20 20 4.5 V 10 V 3.0 V Pulse Test ID (A) 16 2.9 V 12 16 VDS = 10 V Pulse Test 12 Drain Current ID (A) Operation in this area is limited by RDS(on) Tc = 25°C 0 Drain Current 10 10 Op Drain Current 15 DC Channel Dissipation Pch (W) 20 2.7 V 8 4 2.5 V 8 4 25°C Tc = 75°C –25°C 0 2 4 6 Drain to Source Voltage 8 10 1 2 3 4 Gate to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS (on) (mV) 0 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current 100 200 Pulse Test Pulse Test 150 30 100 10 VGS = 4.5 V ID = 10 A 50 10 V 3 5A 2A 0 4 8 12 Gate to Source Voltage 16 20 VGS (V) REJ03G1722-0400 Rev.4.00 Sep 29, 2009 Page 7 of 10 1 1 3 10 30 Drain Current 100 ID 300 1000 (A) RJK0389DPA Preliminary Static Drain to Source on State Resistance vs. Temperature Typical Capacitance vs. Drain to Source Voltage 50 10000 Pulse Test 3000 Capacitance C (pF) 40 30 ID = 2 A, 5 A, 10 A 20 VGS = 4.5 V 10 1000 Ciss 300 Crss 30 0 –25 2 A, 5 A, 10 A 10 V 0 25 50 75 10 0 100 125 150 Case Temperature Tc (°C) 12 VDS 20 8 10 4 VDD = 25 V 10 V 0 0 0 8 16 Gate Charge 24 32 40 Qg (nc) Repetitive Avalanche Energy EAR (mJ) 20 16 12 8 4 50 75 100 125 150 Channel Temperature Tch (°C) REJ03G1722-0400 Rev.4.00 Sep 29, 2009 Page 8 of 10 30 Pulse Test 10 V 40 5V 30 20 VGS = 0, –5 V 10 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Maximum Avalanche Energy vs. Channel Temperature Derating 0 25 20 50 Reverse Drain Current IDR (A) 16 VDD = 25 V 10 V VGS (V) 20 VGS 40 30 10 Reverse Drain Current vs. Source to Drain Voltage Gate to Source Voltage VDS (V) Drain to Source Voltage ID = 20 A VGS = 0 f = 1 MHz Drain to Source Voltage VDS (V) Dynamic Input Characteristics 50 Coss 100 RJK0389DPA Preliminary Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 D= PDM 2 0.0 1 0 . 0 0.03 se ul p ot PW T h 1s 0.01 PW T 1m 100 m 10 m 1 10 Pulse Width PW (s) Avalanche Test Circuit Avalanche Waveform EAR = L VDS Monitor 1 L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg VDS VDD D. U. T ID Vin 15 V 0 VDD Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. Rg RL Vin Vout Vin 10 V 10% 10% 10% VDS = 10 V 90% td(on) REJ03G1722-0400 Rev.4.00 Sep 29, 2009 Page 9 of 10 tr 90% td(off) tf RJK0389DPA Preliminary Package Dimensions Package Name WPAK-D2 JEITA Package Code - RENESAS Code PWSN0008DD-A Previous Code MASS[Typ.] 0.07g WPAK-DV(2) 5.1 ± 0.2 0.5 ± 0.15 Unit : mm 0.8 Max 0.4 ± 0.06 2.2 ± 0.2 0.935 ± 0.15 2.9 ± 0.2 0.5 ± 0.15 (0.05) 0.4 ± 0.15 Stand-off 0.05Max 0Min 0.2 Typ 1.27 Typ 0.635Max 0.45 ± 0.1 (0.6) (0.6) 0.9 ± 0.15 1.1 ± 0.2 +0.1 5.9 −0.2 +0.1 6.1 −0.3 3.9 ± 0.2 4.9 ± 0.1 (Ni/Pd/Au plating) Ordering Information Part No. RJK0389DPA-00-J53 Quantity 3000 pcs REJ03G1722-0400 Rev.4.00 Sep 29, 2009 Page 10 of 10 Shipping Container Taping Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. 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