HAF2011(L), HAF2011(S) Silicon N Channel MOS FET Series Power Switching REJ03G1138-0500 Rev.5.00 Aug 21, 2007 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features • • • • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery) Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 4 4 1 1 2 3 D Gate Resistor G Temperature Sensing Circuit Latch Circuit Gate Shutdown Circuit S REJ03G1138-0500 Rev.5.00 Aug 21, 2007 Page 1 of 8 1. Gate 2. Drain 3. Source 4. Drain 2 3 HAF2011(L), HAF2011(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Symbol VDSS VGSS VGSS ID Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Value 60 16 –2.5 40 80 40 50 150 –55 to +150 ID (pulse) Note 1 IDR Pch Note 2 Tch Tstg Unit V V V A A A W °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Typical Operation Characteristics (Ta = 25°C) Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Symbol VIH VIL IIH1 IIH2 IIL IIH (sd) 1 IIH (sd) 2 Tsd VOP REJ03G1138-0500 Rev.5.00 Aug 21, 2007 Page 2 of 8 Min 3.5 Typ — Max — Unit V — — — — — — — 3.5 — — — — 0.8 0.35 175 — 1.2 100 50 1 — — — 12 V µA µA µA mA mA °C V Test Conditions Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Vi = 1.2 V, VDS = 0 Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Channel temperature HAF2011(L), HAF2011(S) Electrical Characteristics (Ta = 25°C) Item Symbol ID1 ID2 V (BR) DSS V (BR) GSS V (BR) GSS IGSS1 IGSS2 IGSS3 IGSS4 IGS (op) 1 IGS (op) 2 IDSS VGS (off) RDS (on) RDS (on) |yfs| Coss Min 15 — 60 16 –2.5 — — — — — — — 1.0 — — 8 — Typ — — — — — — — — — 0.8 0.35 — — 25 15 16 940 Max — 10 — — — 100 50 1 –100 — — 10 2.25 33 20 — — Unit A mA V V V µA µA µA µA mA mA µA V mΩ mΩ S pF Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time td (on) tr td (off) tf VDF trr — — — — — — 10.7 66 15.5 19 1 200 — — — — — — µs µs µs µs V ns Over load shut down operation time Note4 tos1 — 1 — ms Drain current Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Input current (shut down) Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Output capacitance Notes: 3. Pulse test 4. Including the junction temperature rise of the over loaded condition. REJ03G1138-0500 Rev.5.00 Aug 21, 2007 Page 3 of 8 Test Conditions VGS = 3.5 V, VDS = 2 V VGS = 1.2 V, VDS = 2 V ID = 10 mA, VGS = 0 IG = 300 µA, VDS = 0 IG = –100 µA, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VGS = 1.2 V, VDS = 0 VGS = –2.4 V, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 20 A, VGS = 4 V Note 3 ID = 20 A, VGS = 10 V Note 3 ID = 20 A, VDS = 10 V Note 3 VDS = 10 V, VGS = 0 f = 1 MHz ID = 20 A VGS = 5 V RL = 1.5 Ω IF = 40 A, VGS = 0 IF = 40 A, VGS = 0 diF/dt = 50 A/µs VGS = 5 V, VDD = 16 V HAF2011(L), HAF2011(S) Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 500 ID (A) Thermal shut down 200 Operation area 60 Drain Current Channel Dissipation Pch (W) 80 40 20 50 100 150 Case Temperature 10 50 DC 20 200 Drain Current ion 10 m s (T c= 5 s s 25 10 °C ) 20 50 100 50 40 Tc = –25°C 25°C 30 4V 40 = m Typical Transfer Characteristics ID (A) 60 0µ 1 Drain to Source Voltage VDS (V) Drain Current ID (A) 80 at Operation in this area is 2 limited by R DS (on) 1 Tc (°C) Pulse Test 8V 6V 5V 10 V Op er 10 5 Typical Output Characteristics 100 PW 0.5 Ta = 25°C 0.3 0.3 0.5 1 2 0 0 100 VGS = 3.5 V 20 75°C 20 10 VDS = 10 V Pulse Test 0 0 0 2 4 6 Drain to Source Voltage 8 10 0 0.4 ID = 20 A 0.3 0.2 10 A 0.1 5A 0 0 2 4 6 8 10 Gate to Source Voltage VGS (V) REJ03G1138-0500 Rev.5.00 Aug 21, 2007 Page 4 of 8 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ) Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 2 Gate to Source Voltage VDS (V) 0.5 1 50 VGS = 4 V 20 10 V 10 5 2 Pulse Test 1 1 2 5 10 20 Drain Current 50 100 200 ID (A) Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test 0.08 0.06 5 A, 10 A ID = 20 A 0.04 VGS = 4 V ID = 20 A 0.02 5 A, 10 A 10 V 0 –40 0 40 80 Case Temperature 120 160 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (Ω) HAF2011(L), HAF2011(S) 100 VDS = 10 V Pulse Test 50 Tc = –25°C 20 10 25°C 75°C 5 2 1 0.5 500 500 Switching Time t (µs) Reverse Recovery Time trr (ns) 1000 200 100 50 di / dt = 50 A / µs VGS = 0, Ta = 25°C 1 2 5 10 Reverse Drain Current 20 10 20 50 VGS = 5 V, VDD = 30 V PW = 300 µs, duty ≤ 1 % 200 100 tr 50 tf 20 td(off) td(on) 10 0.5 50 IDR (A) 1 2 5 10 Drain Current 20 50 ID (A) Typical Capacitance vs. Drain to Source Voltage Reverse Drain Current vs. Source to Drain Voltage 50 10000 Pulse Test 40 Capacitance C (pF) Reverse Drain Current IDR (A) 5 Switching Characteristics 1000 10 0.5 2 Drain Current ID (A) Tc (°C) Body-Drain Diode Reverse Recovery Time 20 1 VGS = 5 V 30 0V 20 10 3000 1000 Coss 300 100 30 0 VGS = 0 f = 1 MHz 10 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) REJ03G1138-0500 Rev.5.00 Aug 21, 2007 Page 5 of 8 0 10 20 30 40 50 Drain to Source Voltage VDS (V) HAF2011(L), HAF2011(S) Shutdown Case Temperature vs. Gate to Source Voltage Shutdown Case Temperature Tc (°C) Gate to Source Voltage VGS (V) Gate to Source Voltage vs. Shutdown Time of Load-Short Test 12 10 VDD = 9 V 8 6 16 V 4 2 0 0.1 1 10 100 200 180 160 140 120 ID = 5 A 100 0 Shutdown Time of Load-Short Test PW (mS) 2 4 6 8 10 VGS (V) Gate to Source Voltage Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 θch – c (t) = γ s (t) • θch – c θch – c = 2.5°C/W, Tc = 25°C 0.1 0.1 0.05 0.03 0.02 1 0.0 1 o sh D= PDM tp uls 0.01 10 µ e PW T PW T 100 µ 1m 100 m 10 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor D.U.T. Vin 10% RL Vout Vin 5V 50 Ω VDD = 30 V 10% 90% td(on) REJ03G1138-0500 Rev.5.00 Aug 21, 2007 Page 6 of 8 10% tr 90% td(off) tf HAF2011(L), HAF2011(S) Package Dimensions RENESAS Code PRSS0004AE-A MASS[Typ.] 1.40g 4.44 ± 0.2 1.3 ± 0.15 1.3 ± 0.2 1.37 ± 0.2 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B 2.49 ± 0.2 11.0 ± 0.5 0.2 0.86 +– 0.1 Package Name LDPAK(S)-(1) Unit: mm 10.2 ± 0.3 8.6 ± 0.3 11.3 ± 0.5 0.3 10.0 +– 0.5 Previous Code LDPAK(L) / LDPAK(L)V Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V 0.4 ± 0.1 MASS[Typ.] 1.30g (1.5) 10.0 2.54 ± 0.5 REJ03G1138-0500 Rev.5.00 Aug 21, 2007 Page 7 of 8 0.4 ± 0.1 0.3 3.0 +– 0.5 2.54 ± 0.5 0.2 0.86 +– 0.1 7.8 7.0 2.49 ± 0.2 0.2 0.1 +– 0.1 1.37 ± 0.2 1.3 ± 0.2 7.8 6.6 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 Unit: mm 1.7 JEITA Package Code (1.4) Package Name LDPAK(L) 2.2 HAF2011(L), HAF2011(S) Ordering Information Part No. HAF2011-90L HAF2011-90S HAF2011-90STL HAF2011-90STR Quantity Max: 50 pcs/sack Max: 50 pcs/sack 1000 pcs/Reel 1000 pcs/Reel REJ03G1138-0500 Rev.5.00 Aug 21, 2007 Page 8 of 8 Shipping Container Sack Sack Embossed tape Embossed tape Sales Strategic Planning Div. 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