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Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SC2855, 2SC2856 Silicon NPN Epitaxial ADE-208-1079 (Z) 1st. Edition Mar. 2001 Application • Low frequency low noise amplifier • Complementary pair with 2SA1190 and 2SA1191 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2855, 2SC2856 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC2855 2SC2856 Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Emitter to base voltage VEBO 5 5 V Collector current IC 100 100 mA Emitter current IE –100 –100 mA Collector power dissipation PC 400 400 mW Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C 2 2SC2855, 2SC2856 Electrical Characteristics (Ta = 25°C) 2SC2855 2SC2856 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 90 — — 120 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 90 — — 120 — — V I C = 1 mA, RBE = Emitter to base breakdown voltage V(BR)EBO 5 — — 5 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.1 — — 0.1 µA VCB = 70 V, IE = 0 Emitter cutoff current I EBO — — 0.1 — — 0.1 µA VEB = 2 V, IC = 0 250 — 800 250 — 800 1 VCE = 12 V, IC = 2 mA*2 DC current transfer ratio hFE* Collector to emitter saturation voltage VCE(sat) — 0.05 0.10 — 0.05 0.10 V Base to emitter saturation VBE(sat) voltage — 0.7 1.0 — 0.7 1.0 V Gain bandwidth product fT — 310 — — 310 — MHz VCE = 6 V, IC = 10 mA Collector output capacitance Cob — 3 — — 3 — pF VCB = 10 V, IE = 0, f = 1 MHz Noise figure NF — 0.15 1.5 — 0.15 1.5 dB VCE = 6 V, IC = 0.1 mA, Rg = 10 kΩ, f = 1 kHz — 0.2 2.0 — 0.2 2.0 dB VCE = 6 V, IC = 0.1 mA, Rg = 10 kΩ, f = 10 Hz — 0.7 — — 0.7 — nV/√Hz VCE = 6 V, IC = 10 mA, Rg = 0, f = 1 kHz Noise voltage referred to input en I C = 10 mA, IB = 1 mA*2 Notes: 1. The 2SC2855 and 2SC2856 are grouped by h FE as follows. 2. Pulse test D E 250 to 500 400 to 800 3 2SC2855, 2SC2856 Typical Output Characteristics 20 8 4 0 150 W 50 100 Ambient Temperature Ta (°C) m 0 12 0 40 200 24 22 16 = Collector Current IC (mA) 400 26 PC Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 600 20 18 16 14 12 10 8 6 4 2 µA IB = 0 20 40 60 80 100 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics Typical Output Characteristics 10 8 16 14 6 12 10 4 8 6 2 4 2 µA IB = 0 0 4 4 8 12 16 20 Collector to Emitter Voltage VCE (V) VCE = 6 V Pulse 100 Collector Current IC (mA) Collector Current IC (mA) 18 Ta = 75°C 10 25°C –25°C 1.0 0.1 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) 2SC2855, 2SC2856 Collector Cut-Off Current vs. Collector to Base Voltage Collector Cut-Off Current vs. Collector to Emitter Voltage 1,000 100 Ta = 75 Collector Cut-Off Current ICEO (nA) Collector Cut-Off Current ICBO (pA) 1,000 °C 25 –25 10 1.0 0.1 0 Collector to Emitter Breakdown Voltage V(BR)CER (V) °C 75 = 5 25 –2 1.0 0.1 2 4 6 8 Emitter to Base Voltage VEB (V) 20 40 60 80 100 Collector to Emitter Voltage VCE (V) Collector to Emitter Breakdown Voltage vs. Base to Emitter Resistance Ta Emitter Cut-Off Current IEBO (pA) –25 1.0 20 40 60 80 100 Collector to Base Voltage VCB (V) 1,000 0 =7 25 10 Emitter Cut-Off Current vs.Emitter to Base Voltage 10 Ta 0.1 0 100 5°C 100 10 190 180 Typical Value IC = 1 mA 170 160 150 140 10 100 1k 10 k 100 k Base to Emitter Resistance RBE (Ω) 5 2SC2855, 2SC2856 DC Current Transfer Ratio vs. Collector Current Collector to Emitter Saturation Voltage VCE(sat) (V) DC Current Transfer Ratio hFE 1,000 Ta = 75°C 25 –25 300 100 30 VCE = 12 V Pulse 10 1 3 10 30 Collector Current IC (mA) Collector to Emitter Saturation Voltage vs. Collector Current 1.0 Pulse IC = 10 IB 0.3 0.1 Ta = 75°C 25 –25 0.03 0.01 100 1 1,000 10 Pulse IC = 10 IB Gain Bandwidth Product fT (MHz) Base to Emitter Saturation Voltage VBE(sat) (V) 100 Gain Bandwidth Product vs. Collector Current Base to Emitter Saturation Voltage vs. Collector Current 3 1.0 Ta =–25°C 75 25 0.3 0.1 1 6 3 10 30 Collector Current IC (mA) 3 10 30 Collector Current IC (mA) 100 VCE = 6 V 500 200 100 50 20 10 0.5 1.0 2 5 10 20 Collector Current IC (mA) 50 2SC2855, 2SC2856 Noise Voltage Referred to Input vs. Collector Current 100 10 IE = 0 f = 1 MHz Noise Voltage Referred to Input Hz) en (nV/ √ Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 30 10 3 3 1.0 0.3 0.1 0.1 1 1 VCE = 6 V Rg = 0 f = 1 kHz 3 10 30 100 Collector to Base Voltage VCB (V) Noise Voltage Referred to Input vs. Signal Source Resistance 1.0 VCE = 6 V f = 1 kHz 100 A IC = 10 m 1 .0 1 0. 10 1.0 Noise Voltage Referred to Input Hz) en (nV/ √ Noise Voltage Referred to Input Hz) en (nV/ √ 10 Noise Voltage Referred to Input vs. Collector to Emitter Voltage 1,000 0.1 10 0.3 1.0 3 Collector Current IC (mA) 0.9 0.8 0.7 IC = 1 mA Rg = 0 f = 1 kHz 0.6 0.5 100 1k 10 k 100 k Signal Source Resistance Rg (Ω) 1 3 10 30 100 Collector to Emitter Voltage VCE (V) 7 2SC2855, 2SC2856 Noise Voltage Referred to Input vs. Frequency Noise Voltage Referred to Input Hz) en (nV/ √ 2.0 VCE = 6 V Rg = 0 1.6 1.2 0.8 10 0.4 0 10 8 IC = 1 mA 100 1k 10 k Frequency f (Hz) 100 k 2SC2855, 2SC2856 Package Dimensions As of January, 2001 Unit: mm 4.8 ± 0.4 0.7 0.60 Max 0.55Max 12.7 Min 2.3 Max 5.0 ± 0.2 3.8 ± 0.4 0.5Max 1.27 2.54 Hitachi Code JEDEC EIAJ Mass (reference value) TO-92 (1) Conforms Conforms 0.25 g 9 2SC2855, 2SC2856 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 10