RENESAS HAT2080R

HAT2080R
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1180-0200
(Previous: ADE-208-1229)
Rev.2.00
Sep 07, 2005
Features
• Low on-resistance
• Low drive current
• High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
5 6 7 8
D D D D
65
87
1, 2, 3
4
5, 6, 7, 8
4
G
12
34
S S S
1 2 3
Rev.2.00 Sep 07, 2005 page 1 of 3
Source
Gate
Drain
HAT2080R
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Symbol
VDSS
Value
250
Unit
V
VGSS
ID
±30
1.7
V
A
13.6
1.7
A
A
2.5
150
W
°C
ID (pulse)
IDR
Note 1
Note 2
Channel dissipation
Channel temperature
Pch
Tch
°C
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Symbol
V (BR) DSS
Min
250
Typ
—
Max
—
Unit
V
IGSS
IDSS
—
—
—
—
±0.1
1
µA
µA
VGS = ±30 V, VDS = 0
VDS = 250 V, VGS = 0
VGS (off)
RDS (on)
3.0
—
—
0.65
4.0
0.85
V
Ω
ID = 1 mA, VDS = 10 V
Note 3
ID = 0.85 A, VGS = 10 V
Forward transfer admittance
Input capacitance
|yfs|
Ciss
1.2
—
2.0
300
—
—
S
pF
Output capacitance
Reverse transfer capacitance
Coss
Crss
—
—
42
11
—
—
pF
pF
ID = 0.85 A, VDS = 10 V
VDS = 25 V
VGS = 0
f = 1 MHz
Turn-on delay time
Rise time
td (on)
tr
—
—
18
10
—
—
ns
ns
Turn-off delay time
Fall time
td (off)
tf
—
—
47
15
—
—
ns
ns
Total gate charge
Gate to source charge
Qg
Qgs
—
—
11
1.5
—
—
nC
nC
Gate to drain charge
Body to drain diode forward voltage
Qgd
VDF
—
—
5
0.8
—
1.2
nC
V
trr
—
80
—
ns
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Body to drain diode reverse recovery time
Note:
3. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 3
Test Conditions
ID = 10 mA, VGS = 0
Note 3
VDD = 125 V, ID = 0.85 A
VGS = 10 V
RL = 147 Ω
Rg = 10 Ω
VDD = 200 V
VGS = 10 V
ID = 1.7 A
IF = 1.7 A, VGS = 0
IF = 1.7 A, VGS = 0
diF/dt = 100 A/µs
Note 3
HAT2080R
Package Dimensions
JEITA Package Code
RENESAS Code
P-SOP8-3.95 × 4.9-1.27
PRSP0008DD-D
Package Name
FP-8DAV
0.085g
F
*1 D
MASS[Typ.]
bp
1
c
*2 E
Index mark
HE
5
8
4
Z
Terminal cross section
(Ni/Pd/Au plating)
*3 bp
x M
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
e
Reference
Symbol
L1
Dimension in Millimeters
Min
Nom
Max
D
4.90
5.3
E
3.95
A2
A1
0.10
0.14
0.25
0.34
0.40
0.46
0.15
0.20
0.25
1.75
A
A
bp
A1
b1
c
L
c1
0°
y
HE
Detail F
5.80
e
8°
6.10
6.20
1.27
x
0.25
y
0.1
Z
0.75
L
L1
0.40
0.60
1.27
1.08
Ordering Information
Part Name
Quantity
Shipping Container
HAT2080R-EL-E
2500 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 3 of 3
Sales Strategic Planning Div.
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Colophon .3.0