HSM107S Silicon Schottky Barrier Diode for System Protection REJ03G0173-0700Z (Previous: ADE-208-058F) Rev.7.00 Jan.28.2004 Features • Low VF and high efficiency. • HSM107S which is interconnected in series configuration is designed for protection from not only external excessive voltage but also miss-operation on electric systems. • MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HSM107S C5 MPAK Pin Arrangement 3 2 1 (Top View) Rev.7.00, Jan.28.2004, page 1 of 5 1. Cathode 2 2. Anode 1 3. Cathode 1 Anode 2 HSM107S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Reverse voltage VR 8 V Peak forward current IFM IFSM *1 0.1 A 0.5 A 2 Non-Repetitive peak forward surge current Average forward current IO * 50 mA Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Notes: 1. Rectangular wave, 10 ms 2. Per one device Electrical Characteristics *1 (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR 8 — — V IR = 1.0 mA Reverse current IR 30 µA VR = 5 V VF 0.3 V IF = 10 mA 100 V C = 200 pF, Both forward and reverse direction 1 pulse Forward voltage ESD Capability * 2 Notes: 1. Per one device 2. Failure Criterion ; IR ≥ 60 µA at VR = 5 V Rev.7.00, Jan.28.2004, page 2 of 5 HSM107S Main Characteristic 10–2 10–1 Reverse current IR (A) Forward current IF (A) 10–2 10–3 10–4 10–5 10–3 10–4 10–5 10–6 10–7 0 0.1 0.2 0.3 0.4 0.5 Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage 10 Capacitance C (pF) f = 1MHz 1.0 0.1 1.0 10 40 Reverse voltage VR (V) Fig.3 Capacitance vs. Reverse voltage Rev.7.00, Jan.28.2004, page 3 of 5 10–6 0 2 4 6 8 10 Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage HSM107S Example of application circuite SBD (EX. HSM107S) Vcc D1 Input R + Surge Vin IC / LSI D2 0.35V Vcc GND GND 0.35V − Surge Rev.7.00, Jan.28.2004, page 4 of 5 Built-in diode · 0.7V VF = · HSM107S Package Dimensions As of January, 2003 1.9 ± 0.2 2.8 + 0.2 – 0.6 + 0.2 1.1 – 0.1 0.3 2.8 +– 0.1 0 – 0.1 (0.3) (0.95) (0.95) + 0.10 0.16 – 0.06 (0.65) 1.5 ± 0.15 0.10 3–0.4 +– 0.05 (0.65) Unit: mm Package Code JEDEC JEITA Mass (reference value) Rev.7.00, Jan.28.2004, page 5 of 5 MPAK — Conforms 0.011 g Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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