Preliminary Datasheet LPM9013 LPM9013 P-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM9013 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. ■ -20V/-2.6A,RDC(ON)=125mΩ(typ.)@VGS=-2.5V ■ -20V/-3.0A,RDC(ON)=98mΩ(typ.)@VGS=-4.5V ■ Super high density cell design for extremely low RDC(ON) ■ SOT23 Package This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. Portable Media Players Cellular and Smart mobile phone LCD DSC Sensor Wireless Card Ordering Information LPM9013- □ □ Applications □ F: Pb-Free Marking Information Package Type B3: SOT23 Please see website. Pin Configurations SOT23L(Top View) LPM9013 – 00 Version 1.0 Datasheet Dec.-2008 www.lowpowersemi.com Page 1 of 7 Preliminary Datasheet LPM9013 Functional Pin Description LPM9013 – 00 Version 1.0 Datasheet Dec.-2008 www.lowpowersemi.com Page 2 of 7 Preliminary Datasheet LPM9013 – 00 Version 1.0 Datasheet Dec.-2008 www.lowpowersemi.com LPM9013 Page 3 of 7 Preliminary Datasheet LPM9013 – 00 Version 1.0 Datasheet Dec.-2008 www.lowpowersemi.com LPM9013 Page 4 of 7 Preliminary Datasheet LPM9013 – 00 Version 1.0 Datasheet Dec.-2008 www.lowpowersemi.com LPM9013 Page 5 of 7 Preliminary Datasheet LPM9013 – 00 Version 1.0 Datasheet Dec.-2008 www.lowpowersemi.com LPM9013 Page 6 of 7 Preliminary Datasheet LPM9013 Packaging Information LPM9013 – 00 Version 1.0 Datasheet Dec.-2008 www.lowpowersemi.com Page 7 of 7