ST2300SRG N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION SOT-23 FEATURE 3 D G S 1 2 1.Gate 2.Source 3.Drain 20V/6.0A, RDS(ON) = 35mΩ (Typ.) @VGS = 10V 20V/5.0A, RDS(ON) = 48mΩ @VGS = 4.5V 20V/4.5A, RDS(ON) = 90mΩ @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability SOT-23 package design PART MARKING SOT-23 3 42YA 1 Y: Year Code 2 A: Process Code ORDERING INFORMATION Part Number Package Part Marking ST2300SRG SOT-23 42YA ※ Process Code : A ~ Z ; a ~ z ※ ST2300SRG ; S : SOT23 R : Tape Reel ; G : Pb – Free 1 ST2300SRG 2005. V1 86-755-83468588 86-755-83755599 ST2300SRG N Channel Enhancement Mode MOSFET 6.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Symbol Typical Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V ID 6.0 3.0 A IDM 10 A IS 1.0 A PD 1.25 0.8 W TJ 150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 140 Parameter TA=25℃ TA=70℃ Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) TA=25℃ TA=70℃ Power Dissipation Operation Junction Temperature ℃/W 2 ST2300SRG 2005. V1 86-755-83468588 86-755-83755599 ST2300SRG N Channel Enhancement Mode MOSFET 6.0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min V(BR)DSS VGS=0V,ID=250uA 20 VGS(th) VDS=VGS,ID=250uA 0.4 IGSS Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current V 1.2 V VDS=0V,VGS=±20V ±100 nA VDS=20V,VGS=0V 1 VDS=20V,VGS=0V TJ=85℃ 10 IDSS uA RDS(on) VGS=10V,ID=6.0A VGS=4.5V,ID=5.0A VGS=2.5V,ID=4.5A 0.035 0.048 0.090 Ω Forward Tranconductance gfs VDS=15V,ID=5.0A 30 S Diode Forward Voltage VSD IS=1.7A,VGS=0V 0.9 1.2 10 13 Drain-source On-Resistance V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Output Capacitance Ciss Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time VDS=10V VGS=4.5V ID≡5A td(on) tr td(off) tf 1.4 nC 2.1 VDS=10V VGS=0V F=1MHz 600 120 VDD=10V RL=10Ω ID=1A VGEN=4.5V RG=6Ω 15 25 40 60 45 65 30 40 pF 100 nS 3 ST2300SRG 2005. V1 86-755-83468588 86-755-83755599 ST2300SRG N Channel Enhancement Mode MOSFET 6.0A TYPICAL CHARACTERICTICS (25℃ Unless noted) 4 ST2300SRG 2005. V1 86-755-83468588 86-755-83755599 ST2300SRG N Channel Enhancement Mode MOSFET 6.0A TYPICAL CHARACTERICTICS (25℃ Unless noted) 5 ST2300SRG 2005. V1 86-755-83468588 86-755-83755599 ST2300SRG N Channel Enhancement Mode MOSFET 6.0A TYPICAL CHARACTERICTIC 6 ST2300SRG 2005. V1 86-755-83468588 86-755-83755599 ST2300SRG N Channel Enhancement Mode MOSFET 6.0A SOT-23 PACKAGE OUTLINE 7 ST2300SRG 2005. V1 86-755-83468588 86-755-83755599