AO3414 DESCRIPTION The 3414 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L 3 D G S 1 1.Gate 2 2.Source 3.Drain 3 FEATURE 20V/4.0A, RDS(ON) = 55m-ohm @VGS = 4.5V 20V/3.4A, RDS(ON) = 70m-ohm @VGS = 2.5V 20V/2.8A, RDS(ON) = 90m-ohm @VGS = 1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design AEXX 1 2 AE: Part Marking XX: Year Code Page 1 AO3414 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS +/-12 V ID A IDM 4.0 3.4 10 A Continuous Source Current (Diode Conduction) IS 1.6 A Power Dissipation PD W TJ 1.25 0.8 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 105 Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current TA=25℃ TA=70℃ Operation Junction Temperature ℃/W Page 2 AO3414 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Symbol Condition V(BR)DSS VGS=0V,ID=-250uA VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) RDS(on) Min Typ Max Unit 20 V VDS=VGS,ID=-250uA 0.4 1.0 VDS=0V,VGS=+/-12V 100 nA VDS=-20V,VGS=0V VDS=-20V,VGS=0V TJ=55℃ VDS≦-5V,VGS=-4.5V 6.0 1 5 V uA A 0.04 0.055 0.05 0.07 Ω 0.065 0.090 10 S Forward Transconductance gfs VGS=4.5V,ID=4.0A VGS=2.5V,ID=3.4A VGS=1.8V,ID=2.8A VDS=5V,ID=3.6V Diode Forward Voltage VSD IS=1.6A,VGS=0V 0.8 1.2 Qg Qgs Qgd Ciss Coss Crss VDS=6V,VGS=4.5V ID≡2.8A 4.8 1.0 1.0 485 85 40 10 13 8 25 60 nS 18 15 70 60 Drain-source On-Resistance V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time td(on) tr td(off) tf VDS=6V,VGS=0V F=1MHz VDD=6V,RL=6Ω ID=1A,VGEN=4.5V RG=6Ω nC pF Page 3 AO3414 SOT-23-3L PACKAGE OUTLINE Page 4 AO3414 TYPICAL CHARACTERICTICS (25℃ Unless noted) Page 5 AO3414 4.0A TYPICAL CHARACTERICTICS (25℃ Unless noted) Page 6 AO3414 TYPICAL CHARACTERICTICS Page 7