Preliminary Datasheet LPM4953 LPM4953 Dual 30V P-Channel PowerTrench MOSFET General Description The LPM4953 is 2-channel the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. Features ■ -30V/-5.0A,RDC(ON)=38mΩ(typ.)@VGS=-10V ■ -30V/-3.6A,RDC(ON)=60mΩ(typ.)@VGS=-4.5V ■ Super high density cell design for extremely low RDC(ON) ■ SOP8 Package This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high=-side switching. Applications Portable Media Players Cellular and Smart mobile phone LCD DSC Sensor Wireless Card Ordering Information LPM4953- □ □ □ F: Pb-Free Marking Information Package Type SO: SOP-8 Please see website. Pin Configurations SOP8(Top View) LPM4953 – 00 Version 1.0 Datasheet Dec.-2009 www.lowpowersemi.com Page 1 of 6 Preliminary Datasheet LPM4953 Functional Pin Description LPM4953 – 00 Version 1.0 Datasheet Dec.-2009 www.lowpowersemi.com Page 2 of 6 Preliminary Datasheet LPM4953 – 00 Version 1.0 Datasheet Dec.-2009 www.lowpowersemi.com LPM4953 Page 3 of 6 Preliminary Datasheet LPM4953 – 00 Version 1.0 Datasheet Dec.-2009 www.lowpowersemi.com LPM4953 Page 4 of 6 Preliminary Datasheet LPM4953 – 00 Version 1.0 Datasheet Dec.-2009 www.lowpowersemi.com LPM4953 Page 5 of 6 Preliminary Datasheet LPM4953 Packaging Information LPM4953 – 00 Version 1.0 Datasheet Dec.-2009 www.lowpowersemi.com Page 6 of 6