PHOTODIODE Si photodiode S10043 Highly reliable photodiode for VUV detection S10043 is a Si photodiode designed to detect high-power ArF excimer lasers (193 nm) with high accuracy and stability. By combining our newly developed technologies for forming ultra-thin PN junctions and high-reliability ultra-thin metal films, S10043 shows almost no change in sensitivity even after exposure to ArF excimer laser beam of 1 kJ/cm2. Features Applications l Greatly improved sensitivity stability even after exposure to ArF (λ=193 nm) excimer laser l Windowless package *1 l ArF excimer laser detection l Various UV detection ■ Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Operating temperature *2 Storage temperature *2 Symbol VR Max. Topr Tstg Value 5 -20 to +60 -55 to +80 Unit V °C °C ■ Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Dark current Terminal capacitance Symbol λ λp S ID Ct Condition Min. 10 - Typ. 190 to 1000 720 15 0.1 4 Max. 1 - Unit nm nm mA/W nA nF λ=193 nm VR=10 mV VR=0 V, f=10 kHz VR=0 V, RL=1 kΩ Rise time tr 9 µs 10 to 90 % *1: S10043 uses a windowless package with no protection on the photodiode chip, and is shipped with the package held with glass tape. Remove the glass tape when using. *2: No condensation 1 Si photodiode ■ Spectral response S10043 ■ Sensitivity change after exposure to ArF laser (Typ. Ta=25 ˚C) 0.25 (Typ. λ=193 nm) 105 RATE OF CHANGE (%) PHOTO SENSITIVITY (A/W) 100 0.20 0.15 0.10 0.05 S8552 (CONVENTIONAL TYPE) 95 90 S10043 85 80 75 70 65 0 100 200 300 400 500 600 700 800 900 1000 60 0 0.2 0.4 0.6 0.8 1 EXPOSURE (kJ/cm2) WAVELENGTH (nm) KSPDB0257EA KSPDB0258EA ■ Dimensional outline (unit: mm) 16.5 ± 0.2 X 15.0 ± 0.15 Y (10.5) 0.75 0.3 PHOTOSENSITIVE SURFACE 2.15 ± 0.1 ACTIVE AREA 10 × 10 BLACK CERAMIC (2 ×) 0.5 Fe·Ni·Co ALLOY 15.1 ± 0.3 12.5 ± 0.2 TAPE 13.7 ± 0.3 ANODE TERMINAL MARK Chip position accuracy with respect to the package center -0.3≤X, Y≤+0.3 KSPDA0171EA ■ Handling precautions ● ● ● ● ● Handle the photodiodes in a clean room. Never touch the photodiode chip surface and wire bonding. Wear dust-proof gloves and dust-proof mask. Use an air dust cleaner to blow away dust and foreign matter on the photodiode chip surface. Do not clean the photodiodes by any method other than air blow. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KSPD1072E01 Jun. 2006 DN