ELECTRON DETECTION 100 mm2 AXUV100G FEATURES • Ideal for electron detection • Large detection area • 100% internal QE Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Shunt Resistance, Rsh TEST CONDITIONS MIN TYP @ 254nm, VR = 0V 0.07 VB = ±10mV 20 0.08 UNITS mm2 100 10mm x 10mm 0.09 A/W M-ohm Reverse Breakdown Voltage, VR IR = 1µA 10 Capacitance, C VR = 0V 10 Rise Time MAX VR = 0V, RL = 50� Volts 44 nF 10 usec THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient2 Nitrogen or Vacuum Maximum Junction Temperature Lead Soldering Temperature1 -10° TO 40°C2 -20°C TO 80°C 70°C 260°C 1 0.08" from case for 10 seconds. Temperatures exceeding these parameters may create Oxide growth on the active area. Over time Responsivity to Low energy radiation and wavelengths below 150nm will Be Compromised. 2 Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover. 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013 ELECTRON DETECTION 100 mm2 RESPONSIVITY (A/W) 0.30 AXUV100G ELECTRON RESPONSE 0.25 0.20 0.15 0.10 0.05 0.00 100 1000 10,000 100,000 ENERGY (ev) RESPONSIVITY (A/W) 0.30 EUV-UV PHOTON RESPONSE 0.25 0.20 0.15 0.10 0.05 0.00 0 RESPONSIVITY (A/W) 0.5 50 100 150 WAVELENGTH (nm) 200 250 UV-VIS-NIR PHOTON RESPONSIVITY 0.4 0.3 0.2 0.1 0.0 200 300 400 500 600 700 800 900 1000 1100 WAVELENGTH (nm) 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013