ELECTRON DETECTION 100 mm2 AXUV100G

ELECTRON DETECTION 100 mm2
AXUV100G
FEATURES
• Ideal for electron detection
• Large detection area
• 100% internal QE
Dimensions are in inch [metric] units.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Active Area
Responsivity, R
Shunt Resistance, Rsh
TEST CONDITIONS
MIN
TYP
@ 254nm, VR = 0V
0.07
VB = ±10mV
20
0.08
UNITS
mm2
100
10mm x 10mm
0.09
A/W
M-ohm
Reverse Breakdown Voltage, VR
IR = 1µA
10
Capacitance, C
VR = 0V
10
Rise Time
MAX
VR = 0V, RL = 50�
Volts
44
nF
10
usec
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE
Ambient2
Nitrogen or Vacuum
Maximum Junction Temperature
Lead Soldering Temperature1
-10° TO 40°C2
-20°C TO 80°C
70°C
260°C
1
0.08" from case for 10 seconds.
Temperatures exceeding these parameters may create Oxide growth on the active area.
Over time Responsivity to Low energy radiation and wavelengths below 150nm will Be Compromised.
2
Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode “Handling Precautions for IRD Detectors”
prior to removing cover.
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision February 26, 2013
ELECTRON DETECTION 100 mm2
RESPONSIVITY (A/W)
0.30
AXUV100G
ELECTRON RESPONSE
0.25
0.20
0.15
0.10
0.05
0.00
100
1000
10,000
100,000
ENERGY (ev)
RESPONSIVITY (A/W)
0.30
EUV-UV PHOTON RESPONSE
0.25
0.20
0.15
0.10
0.05
0.00
0
RESPONSIVITY (A/W)
0.5
50
100
150
WAVELENGTH (nm)
200
250
UV-VIS-NIR PHOTON RESPONSIVITY
0.4
0.3
0.2
0.1
0.0
200
300
400
500
600
700
800
900
1000
1100
WAVELENGTH (nm)
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision February 26, 2013