ELECTRON DETECTION Ø5.5 mm2 AXUV20A FEATURES • Circular active area • Ideal for electron detection • 100% internal QE Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Shunt Resistance TEST CONDITIONS MIN TYP UNITS mm2 23 Ø5.5mm (see graphs on next page) Vf = ±10mV 100 MOhm Reverse Breakdown Voltage, VR IR = 1µA 10 Capacitance, C VR = 10V 0.2 VR = 0V, RL = 50Ω 2 Rise Time MAX Volts 2 pF usec THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient2 Nitrogen or Vacuum Maximum Junction Temperature Lead Soldering Temperature1 -10° TO 40°C -20°C TO 80°C 70°C 260°C 1 0.08" from case for 10 seconds. Temperatures exceeding these parameters may create Oxide growth on the active area. Over time Responsivity to Low energy radiation and wavelengths below 150nm will Be Compromised. 2 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision June 23, 2013 ELECTRON DETECTION Ø5.5 mm2 RESPONSIVITY (A/W) 0.30 AXUV20A ELECTRON RESPONSE 0.25 0.20 0.15 0.10 0.05 0.00 100 1000 10,000 100,000 ENERGY (ev) RESPONSIVITY (A/W) 0.30 EUV-UV PHOTON RESPONSE 0.25 0.20 0.15 0.10 0.05 0.00 0 RESPONSIVITY (A/W) 0.5 50 100 150 WAVELENGTH (nm) 200 250 UV-VIS-NIR PHOTON RESPONSIVITY 0.4 0.3 0.2 0.1 0.0 200 300 400 500 600 700 800 900 1000 1100 WAVELENGTH (nm) 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision June 23, 2013