PHOTODIODE 13 mm2 UVG12

PHOTODIODE 13 mm2
UVG12
FEATURES
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•
•
•
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Circular active area
Ideal for 193-400 nm detection
100% internal QE
No cap for maximum responsivity
Sacrificial cap taped on for
shipping purposes
Dimensions are in inch [metric] units.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
mm2
13.2
Active Area
Ø 4.1 mm
Responsivity, R
@ 254 nm
0.105
0.115
VF = ± 10 mV
100
1000
Mohm
Volts
Shunt Resistance
Reverse Breakdown Voltage, VR
IR = 1 µA
9
Capacitance, C
VR = 0 V
3
Rise Time
VR = 0 V
0.125
A/W
7
nF
4
µsec
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE
Storage Temperature Range
Maximum Junction Temperature
-20° TO 80°C
80°C
Lead Soldering Temperature1
240°C
1
0.0625" from case for 10 seconds.
Shipped with temporary cover to protect photodiode and wire bond.
Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover.
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision September 6, 2013
PHOTODIODE 13 mm2
Responsivity (A/W)
0.6
UVG12
RESPONSIVITY
0.5
0.4
0.3
0.2
0.1
0.0
200
300
400
500
600
700
800
900
1000
1100
Wavelength (nm)
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision September 6, 2013