2N5428 Silicon NPN Transistor Medium Power TO−66 Type Package

2N5428
Silicon NPN Transistor
Medium Power
TO−66 Type Package
Description:
The 2N5430 is a silicon NPN transistor in a TO−66 type package designed for switching and wide−
band amplifier applications
Absolute Maximum Ratings:
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 228 mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.37C/W
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
80
−
−
V
VCE = 75V, VEB(off) = 1.5V
−
−
0.1
mA
VCE = 75V, VEB(off) = 1.5V, TC = 150C
−
−
1.0
mA
ICBO
VCB = Rated VCB, IE = 0
−
−
0.1
mA
IEBO
VBE = 6V, IC = 0
−
−
0.1
mA
hFE
IC = 500mA, VCE = 2V
60
−
−
−
IC = 2A, VCE = 2V
60
−
240
−
IC = 5A, VCE = 2V
40
−
−
−
IC = 2A, IB = 0.2A
−
−
0.7
V
IC = 7A, IB = 0.7A
−
−
1.2
V
IC = 2A, IB = 0.2A
−
−
1.2
V
IC = 7A, IB = 0.7A
−
−
2.0
V
OFF Characteristics
Collector Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO (sus) IC = 50mA, IB = 0, Note 1
ICEX
ON Characteristics (Note 1)
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2.0%
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
20
−
−
MHz
Dynamic Characteristics
Current Gain Bandwidth Product
fT
IC = 500mA, VCE = 10V, f = 10MHz,
Note 2
Note 2 fT = |hfe| = ftest.
.295 (7.5)
.485 (12.3)
Dia
.062 (1.57)
.031 (0.78) Dia
.960 (24.3)
.360
(9.14)
Min
Base
.580 (14.7)
.147 (3.75) Dia
(2 Places)
.200
(5.08)
.145 (3.7) R Max
Collector/Case
Emitter