2N5686 Silicon NPN Transistor High Power, High Current Switch TO

2N5686
Silicon NPN Transistor
High Power, High Current Switch
TO−3 Type Package
Description:
The 2N5686 is a NPN power transistor a TO−3 type case designed for use in high power amplifier and
switching circuit applications.
Features:
D High Current Capability: IC = 50A (Continuous)
D DC Current Gain: hFE= 15 to 60 @ IC = 25Adc
D Low Collector−Emitter Saturation Voltage: VCE(sat) = 1V Max @ IC = 25Adc
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300W
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.715W/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.584C/W
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
80
−
−
V
OFF Characteristics
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 0.2A, IB = 0,
ICEO
VCE = 40V, IB = 0
−
−
1
mA
ICEX
VCE = 80V, VEB(off) = 1.5V
−
−
2
mA
VCE = 80V, VEB(off) = 1.5V, TC = +150C
−
−
10
mA
ICBO
VCB = 80V, IE = 0
−
−
2
mA
IEBO
VBE = 5V, IC = 0
−
−
5
mA
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
Max Unit
ON Characteristics
DC Current Gain
hFE
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 25A, VCE = 2V, Note 1
15
−
60
IC = 50A, VCE = 5V, Note 1
5
−
−
IC = 25A, IB = 2.5A, Note 1
−
−
1
V
IC = 50A, IB = 10A, Note 1
−
−
5
V
Base−Emitter Saturation Voltage
VBE(sat)
IC = 25A, IB = 2.5A
−
−
2
V
Base−Emitter ON Voltage
VBE(on)
IC = 25A, VCE = 2V
−
−
2
V
fT
IC = 5A, VCE = 10V, f = 1MHz
2
−
−
MHz
Output Capacitance
Cob
VCB = 10V, IE = 0, f = 0.1MHz
−
−
1200
pF
Small−Signal Current Gain
hfe
IC = 10A, VCE = 5V, f = 1kHz
15
−
−
Dynamic Characteristics
Current Gain−Bandwidth Product
Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  2%.
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.063 (1.6) Max
1.187 (30.16)
.665
(16.9)
.215 (5.45)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case