2396

NTE2396
MOSFET
N−Ch, Enhancement Mode
High Speed Switch
TO−220 Type Package
Features:
D Dynamic dv/dt Rating
D Repetitive Avalanche Rated
D Current Sense
D +175C Operating Temperature
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
D
G
S
Absolute Maximum Ratings:
Continuous Drain Current (VGS = 10V), ID
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A
TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110A
Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Derate Linearly Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C
Gate−to−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C
Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300C
Mounting Torque (6−32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm)
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62C/W
Typical Thermal Resistance, Case−to−Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5C/W
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. VDD = 25V, starting TJ = +25C, L = 191mH, RG = 25W, IAS = 28A
Note 3. ISD 28A, di/dt 170A/ms, VDD V(BR)DSS, TJ +175C
Rev. 7−14
Electrical Characteristics: (TJ = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain−to−Source Breakdown Voltage
V(BR)DSS
Breakdown Voltage Temp. Coefficient
DV(BR)DSS Reference to +25C, ID = 1mA
DTJ
VGS = 0V, ID = 250mA
Min
Typ
Max
Unit
100
−
−
V
−
0.13
−
V/C
−
−
0.077
W
Static Drain−to−Source On−Resistance
RDS(on)
VGS = 10V, ID = 17A, Note 4
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250mA
2.0
−
4.0
V
VDS = 50V, ID = 17A, Note 4
5.8
−
−
mhos
VDS = 100V, VGS = 0V
−
−
25
mA
VDS = 80V, VGS = 0V, TJ = +150C
−
−
250
mA
Forward Transconductance
Drain−to−Source Leakage Current
gfs
IDSS
Gate−to−Source Forward Leakage
IGSS
VGS = 20V
−
−
100
nA
Gate−to−Source Reverse Leakage
IGSS
VGS = −20V
−
−
−100
nA
ID = 29A, VDS = 80V, VGS = 10V,
Note 4
−
−
69
nC
−
−
13
nC
−
−
37
nC
−
13
−
ns
−
77
−
ns
td(off)
−
40
−
ns
tf
−
48
−
ns
Between lead, .250in. (6.0) mm from
package and center of die contact
−
4.5
−
nH
−
7.5
−
nH
VGS = 0V, VDS = 25V, f = 1MHz
−
1300
−
pF
Total Gate Charge
Qg
Gate−to−Source Charge
Qgs
Gate−to−Drain (“Miller”) Charge
Qgd
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
Fall Time
VDD = 50V, ID = 29A, RG = 9.1W,
RD = 1.7W, Note 4
Internal Drain Inductance
LD
Internal Source Inductance
LS
Input Capacitance
Ciss
Output Capacitance
Coss
−
630
−
pF
Reverse Transfer Capacitance
Crss
−
130
−
pF
Min
Typ
Max
Unit
−
−
28
A
Source−Drain Ratings and Characteristics:
Parameter
Symbol
Continuous Source Current (Body Diode)
IS
Test Conditions
Pulsed Source Current (Body Diode)
ISM
Note 1
−
−
110
A
Diode Forward Voltage
VSD
TJ = +25C, IS = 28A, VGS = 0V,
Note 4
−
−
2.5
V
Reverse Recovery Time
trr
−
120
260
ns
Reverse Recovery Charge
Qrr
TJ = +25C, IF = 29A,
di/dt = 100A/ms, Note 4
−
0.52
1.2
mC
Forward Turn−On Time
ton
Intrinsic turn−on time is neglegible (turn−on is dominated by LS+LD)
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width 300ms; duty cycle 2%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75) Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Gate
.100 (2.54)
Source
Drain/Tab