2908

NTE2908
MOSFET
N−Channel, Enhancement Mode
High Speed Switch
TO−220 Type Package
Description:
The NTE2908 is a Power MOSFET in a TO−220 type package that utilizes advanced processing
techniques to achieve extremely low on−resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design provides an extremely efficient and reliable
device for use in a wide variety of applications.
D
Features:
D Ultra Low ON−Resistance
D Dynamic dv/dt Rating
D +175C Operating Temperature
D Fast Switching
D Fully Avalanche Rated
G
S
Absolute Maximum Ratings:
Continuous Drain Current (VGS = 10V), ID
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202A
TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143A
Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 808A
Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 333W
Derate Linearly Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2W/C
Gate−to−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Single Pulse Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 620mJ
Peak Diode Recovery dv/dt (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C
Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300C
Mounting Torque (6−32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm)
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.45C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62C/W
Typical Thermal Resistance, Case−to−Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5C/W
Note 1. Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
Note 2. Repetitive rating; pulse width limited by maximum junction temperature.
Note 3. Starting TJ = +25C, L = 85H, RG = 25, IAS = 121A
Note 4. ISD  121A, di/dt  130A/s, VDD  V(BR)DSS, TJ  +175C
Rev. 6−15
Electrical Characteristics: (TJ = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain−to−Source Breakdown Voltage
V(BR)DSS
Breakdown Voltage Temp. Coefficient
V(BR)DSS Reference to +25C, ID = 1mA
TJ
VGS = 0V, ID = 250A
Min
Typ
Max
Unit
40
−
−
V
−
0.039
−
V/C
−
0.0035 0.004
Static Drain−to−Source On−Resistance
RDS(on)
VGS = 10V, ID = 121A, Note 5
Gate Threshold Voltage
VGS(th)
VDS = 10V, ID = 250A
2.0
−
4.0
V
gfs
VDS = 25V, ID = 121A
76
−
−
S
IDSS
VDS = 40V, VGS = 0V
−
−
20
A
VDS = 32V, VGS = 0V, TJ = +150C
−
−
250
A
Forward Transconductance
Drain−to−Source Leakage Current

Gate−to−Source Forward Leakage
IGSS
VGS = 20V
−
−
200
nA
Gate−to−Source Reverse Leakage
IGSS
VGS = −20V
−
−
−200
nA
ID = 121A, VDS = 32V, VGS = 10V,
Note 5
−
131
196
nC
−
36
−
nC
−
37
56
nC
−
17
−
ns
−
190
−
ns
td(off)
−
46
−
ns
tf
−
33
−
ns
Between lead, .250in. (6.0) mm from
package and center of die contact
−
4.5
−
nH
−
7.5
−
nH
VGS = 0V, VDS = 25V, f = 1MHz
−
5669
−
pF
Total Gate Charge
Qg
Gate−to−Source Charge
Qgs
Gate−to−Drain (“Miller”) Charge
Qgd
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
Fall Time
VDD = 20V, ID = 121A, RG = 2.5,
RD = 0.2, Note 5
Internal Drain Inductance
LD
Internal Source Inductance
LS
Input Capacitance
Ciss
Output Capacitance
Coss
−
1659
−
pF
Reverse Transfer Capacitance
Crss
−
223
−
pF
Output Capacitance
Coss
VGS = 0V, VDS = 1.0V, f = 1MHz
−
6205
−
pF
VGS = 0V, VDS = 32V, f = 1MHz
−
1467
−
pF
VGS = 0V, VDS = 0V to 32V, Note 6
−
2249
−
pF
Effective Output Capacitance
Coss eff.
Source−Drain Ratings and Characteristics:
Parameter
Symbol
Continuous Source Current (Body Diode)
IS
Pulsed Source Current (Body Diode)
Test Conditions
Min
Typ
Max
Unit
Note 1
−
−
202
A
ISM
Note 2
−
−
808
A
Diode Forward Voltage
VSD
TJ = +25C, IS = 121A, VGS = 0V,
Note 5
−
−
1.5
V
Reverse Recovery Time
trr
−
78
117
ns
Reverse Recovery Charge
Qrr
TJ = +25C, IF = 121A,
di/dt = 100A/s, Note 5
−
163
245
C
Forward Turn−On Time
ton
Intrinsic turn−on time is neglegible (turn−on is dominated by LS+LD)
Note 1. Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
Note 2. Repetitive rating; pulse width limited by maximum junction temperature.
Note 5. Pulse width  00s; duty cycle  2%.
Note 6. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising
from 0 to 80% VDSS.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75) Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Gate
.100 (2.54)
Source
Drain/Tab