NTE30133 Infrared Phototransistor 1.9mm Type SMD Package

NTE30133
Infrared Phototransistor
1.9mm Type SMD Package
Description:
The NTE30133 is a phototransistor in a miniature SMD package which is molded in a water clear
plastic with a spherical top view lens. This device is spectrally matched for use with infrared emitting
diodes such as the NTE30132.
Features:
D Fast Response Time
D High Photo Sensitivity
D Low Junction Capacitance
D Compatible with Infrared and Vapor Phase Reflow Solder Process
D Silicon Chip Material
D Water Clear Lens
D For Use with NTE30132
Applications:
D Miniature Switch
D Counters and Sorter
D Position Sensor
D Infrared Applied System
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter−Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Power Dissipation (at or below TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75mW
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25 to +85C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to +85C
Soldering Temperature (5sec Max), Tsol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260C
Electro−Optical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Range of Spectrol Bandwidth
Wavelength of Peak Sensitivity
Test Conditions
0.5
Min
Typ
Max
Unit
400
−
1100
nm
−
940
−
nm
Collector−Emitter Breakdown Voltage V(BR)CEO IC = 100A, Ee =
0mW/cm2
30
−
−
V
Emitter−Collector Breakdown Voltage V(BR)ECO IE = 100A, Ee =
0mW/cm2
5
−
−
V
−
−
0.4
V
−
−
100
nA
1.0
1.5
−
mA
−
15
−
s
−
15
−
s
Collector−Emitter Saturation Voltage
Collector Dark Current
p
VCE(sat)
ICEO
On−State Collector Current
IC(ON)
Rise Time
tr
Fall Time
tf
IC = 2mA, Ee = 1mW/cm2
VCE = 20V, Ee =
VCE = 5V, Ee =
0mW/cm2
1mW/cm2
VCE = 5V, IC = 1mA,
RL = 1000
.098 (2.5)
.043 (1.1)
.016 (0.4)
.075 (1.9) Dia
.020 (0.5)
Collector
.276 (7.0) Min
Emitter
.276 (7.0) Min
.055
(1.4)
.110
(2.8)
.079 (2.0)