NJG1117HA8 GPS LOW NOISE AMPLIFIER GaAs MMIC Q GENERAL DESCRIPTION This IC is a Low noise amplifier GaAs MMIC designed for GPS. This amplifier provides low noise figure, high gain and high IP3 operated by single low positive power supply. This amplifier can be tuned to wide frequency point (1.5GHz~2.4GHz). An ultra-small and ultra-thin package of USB6-A8 is adopted. Q FEATURES O Low voltage operation O Low current consumption O High small signal gain O Low noise figure O Input power at 1dB gain compression point O High input IP3 O Ultra-small & ultra-thin package Q PACKAGE OUTLINE NJG1117HA8 +2.7V typ. 3.0mA typ. 19.5dB typ. @ f=1.575GHz 0.7dB typ. @ f=1.575GHz -16.5 dBm typ. @f=1.575GHz -2.0dBm typ. @f=1.575GHz+1.5751GHz USB6-A8 (Package size: 1.0x1.2x0.38mm) Q PIN CONFIGURATION HA8 Type (Top View) GND 3 R FIN GND 4 Pin connection 1. RFOUT 2. GND 3. GND 4. RFIN 5. GND 6. GND 2 Bias Circuit GN D RFOU T 5 1 GN D 6 1Pin INDEX Note: Specifications and description listed in this datasheet are subject to change without notice. Ver.2007-06-22 -1- NJG1117HA8 Q ABSOLUTE MAXIMUM RATINGS Ta=+25°C, Zs=Zl=50 ohm PARAMETER SYMBOL CONDITIONS RATINGS UNITS 5.0 V Drain Voltage VDD Input power Pin VDD=2.7V +15 dBm Power dissipation PD On PCB board, Tjmax=150°C 150 mW Operating temperature Topr -40~+85 °C Storage temperature Tstg -55~+150 °C Q ELECTRICAL CHARACTERISTICS GENERAL CONDITIONS: VDD=2.7V, fRF=1575MHz, Ta=+25°C, Zs=Zl=50 ohm, with application circuit. PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency freq 1.57 1.575 1.58 GHz Operating voltage VDD 2.5 2.7 3.6 V Operating current1 IDD - 3.0 4.0 mA 17.5 19.5 22.0 dB - 0.7 1.0 dB -19.0 -16.5 - dBm -8.0 -2.0 - dBm Small signal gain Noise figure Input power at 1dB gain compression point Input 3rd order intercept point RF OFF Gain NF Exclude PCB & connector losses (IN: 0.05dB) P-1dB(IN) IIP3 f1=fRF, f2=fRF+100kHz, Pin=-34dBm RF IN VSWR VSWRi - 2.0 2.5 RF OUT VSWR VSWRo - 1.5 2.0 -2- NJG1117HA8 Q TERMINAL INFORMATION No. SYMBOL DESCRIPTION 1 RFOUT RF Output and voltage supply pin. An external output matching circuit and a bypass capacitor are required. L3 is a RF choke inductor. These elements are used as output matching circuit. 2 GND Ground terminal. (0V) 3 GND Ground terminal. (0V) 4 RFIN RF input pin. A DC blocking capacitor is not required. An external input matching circuit is required. 5 GND Ground terminal. (0V) 6 GND Ground terminal. (0V) CAUTION 1) Ground terminal (2, 3, 5, 6) should be connected with the ground plane as low inductance as possible. -3- NJG1117HA8 Q ELECTRICAL CHARACTERISTICS (Conditions: Ta=+25°C, VDD=2.7V, Zs=Zl=50 ohm, with application circuit.) Pout vs. Pin Gain, IDD vs. Pin (VDD=2.7V, fRF=1575MHz) 10 7 Gain (dB) Pout -5 -10 -15 P-1dB(IN)=-16.6dBm -20 -25 -40 -30 -20 -10 0 20 6 18 5 4 14 3 12 2 10 8 -40 10 IDD 16 1 P-1dB(IN)=-16.2dBm 0 -30 -20 Pin (dBm) -10 0 10 Pin (dBm) NF, Gain vs. frequency Pout, IM3 vs. Pin (VDD=2.7V) (VDD=2.7V, fRF=1575+1575.1MHz) 2.5 22 20 21 0 2 20 1.5 19 NF 1 18 0.5 17 Gain (dB) Gain Pout, IM3 (dBm) 3 Pout -20 -40 -60 IM3 -80 IIP3=-1.9dBm (NF: Exclude PCB, Connector Losses) 0 1.5 1.55 16 1.65 1.6 frequency (GHz) (VDD=2.7V) k factor 15 10 5 0 0 5 10 frequency (GHz) -4- -30 -20 -10 Pin (dBm) k factor vs. frequency 20 -100 -40 15 20 0 10 IDD (mA) Gain 0 Noise Figure (dB) 8 22 5 Pout (dBm) (VDD=2.7V, fRF=1575MHz) 24 NJG1117HA8 Q ELECTRICAL CHARACTERISTICS (Conditions: Ta=+25°C, VDD= 2.7V, Zs=Zl=50 ohm, with application circuit.) Gain, NF vs. VDD P-1dB(IN) vs. VDD (fRF=1575MHz) 24 22 3.5 -10 3 -12 (fRF=1575MHz) 2.5 18 2 16 1.5 14 1 NF 12 10 2.4 P-1dB(IN) (dBm) 20 NF (dB) Gain (dB) Gain 0.5 2.6 2.8 3 3.2 3.4 3.6 -14 P-1dB(IN) -16 -18 -20 -22 0 3.8 -24 2.4 2.6 2.8 VDD (V) 3.4 3.6 3.8 VSWR vs. VDD (fRF=1575+1575.1MHz, Pin=-34dBm) 10 8 20 6 OIP3 18 4 16 2 14 0 IIP3 12 VSWRi 4 VSWRo VSWRi, VSWRo 22 (fRF=1575MHz) 5 IIP3 (dBm) OIP3 (dBm) 3.2 VDD (V) OIP3, IIP3 vs. VDD 24 3 3 2 -2 1 -4 10 8 2.4 2.6 2.8 3 3.2 3.4 3.6 -6 3.8 VDD (V) 0 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 VDD (V) IDD vs. VDD (RF OFF) 6 5 IDD (mA) 4 IDD 3 2 1 0 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 VDD (V) -5- NJG1117HA8 Q ELECTRICAL CHARACTERISTICS (Conditions: Ta=+25°C, VDD= 2.7V, Zs=Zl=50 ohm, with application circuit.) Gain, NF vs. Temperature 24 22 Gain 3.5 -10 3 -12 2.5 18 2 16 1.5 14 NF (dB) Gain (dB) 20 P-1dB(IN) vs. Temperature 1 P-1dB(IN) (dBm) (fRF=1575MHz) (fRF=1575MHz) -14 -16 P-1dB(IN) -18 -20 NF 12 -22 0.5 10 -50 0 -24 -50 0 100 50 Temperature (oC) OIP3, IIP3 vs. Temperature (fRF=1575+1575.1MHz, Pin=-34dBm) 20 5 10 4 5 10 0 5 IIP3 0 50 -5 -10 100 Temperature (oC) (RF OFF) IDD (mA) 4 3 IDD 2 1 0 50 Temperature (oC) -6- (f=1575MHz) VSWRi 3 2 1 0 -50 0 50 Temperature (oC) IDD vs. Temperature 5 IIP3 (dBm) OIP3 (dBm) 15 0 -50 100 VSWRo OIP3 0 -50 50 VSWR vs. Temperature 15 VSWRi, VSWRo 25 0 Temperature (oC) 100 100 NJG1117HA8 Q ELECTRICAL CHARACTERISTICS (Conditions: Ta=+25°C, VDD= 2.7V, Zs=Zl=50 ohm, with application circuit.) -7- NJG1117HA8 Q APPLICATION CIRCUIT HA8 Type (Top View) GND 3 L2 8.2nH RFIN RF IN GND 4 2 L1 33nH Bias Circuit GND RFOUT L4 C1 22nH 1.5pF RF OUT 1 5 L3 GND 6.8nH VDD=2.7V 6 C2 1000pF 1Pin INDEX Q TEST PCB LAYOUT (Top View) Parts list Parts ID L1 ~ L3 L4 L1 C1 RF OUT RF IN L2 C2 L4 L3 VDD C1 ~ C2 Comment MURATA (LQP03T Series) TDK (MLK0603 Series) MURATA (GRM03 Series) PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH =0.34mm (Z0=50 ohm) PCB SIZE=14.0mm x 14.0mm PRECAUTION: In order to prevent stability degradation in high frequency range, please prepare ground plane between terminal 4(RFIN) and terminal 1(RFOUT). -8- NJG1117HA8 Q MEASUREMENT BLOCK DIAGRAM VDD=2.7V VDD=2.9V RF Output RF Input DUT Port1 Port2 Network Analyzer S parameter Measurement Block Diagram VDD=2.7V VDD=2.9V RF Input RF Output DUT N.S. Output Input Noise Source NF Meter Analyzer Noise Figure Measurement Block Diagram VDD=2.7V freq1 freq1=865.0MHz VDD=2.9V Isolator Signal Generator RF Input DUT Signal Generator freq2=865.1MHz freq2 Isolator Power Comb. 6dB Variable Attenuator RFOutput Spectrum Analyzer Center=865.05Hz Span=400kHz RBW=3kHz VBW=100Hz IIP3 Measurement Block Diagram -9- NJG1117HA8 0.38±0.06 +0.012 0.038-0.009 Q PACKAGE OUTLINE (USB6-A8) 0.03 0.2 (MIN0.15) S S TERMINAL TREAT Substrate Molding material UNIT WEIGHT :Au :FR5 :Epoxy resin :mm :1.1mg 0.2±0.04 C0.1 6 R0.05 5 1 4 0.2±0.04 0.4 0.6 Photo resist coating 0.8 1.2±0.05 0.1±0.05 2 3 0.4 0.2±0.07 1.0±0.05 Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - 10 - [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.