Application Note NJG1138HA8 700MHz Band Application 1 SUMMARY The characteristics of 700MHz band have evaluated as follows. The evaluation circuit structure and measured data are reviewed. 2 MEASURED DATA DC Characteristics General Condition: VDD=2.5 or 2.8V, Ta=+25oC Parameter Symbol Measurement Data Condition VDD=2.5V VDD=2.8V Unit VDD 2.5 2.8 V Control Voltage (High) VCTL1(H) 1.8 1.8 V Control Voltage (Low) VCTL1(L) 0.0 0.0 V Supply Voltage LNA Operating Current1 (High Gain Mode) IDD1 VCTL=1.8V 2.03 2.33 mA LNA Operating Current2 (Low Gain Mode) IDD2 VCTL=0V 9.0 10.4 uA Control Current ICTL VCTL=1.8V 6.2 6.2 uA RF Characteristics1（High Gain Mode） General Condition: : VDD=2.5 or 2.8V, VCTL=1.8V, fRF=750MHz, Zs=Zl=50ohm, Ta=+25oC With Application Circuit Parameter Symbol Measurement Data Condition Unit VDD=2.5V VDD=2.8V Small Signal Gain1 Gain1 Exclude Input & Output PCB, Connector Losses (0.11dB) 16.9 17.5 Isolation1 ISO1 Exclude Input & Output PCB, Connector Losses (0.11dB) -29.0 -29.3 dB Noise Figure1 NF1 Exclude PCB, Connector Losses (0.06dB) 1.29 1.25 dB -9.4 -9.6 dBm -2.7 -2.8 dBm Input Power 1dB Compression1 P-1dB(IN)_1 Input 3rd Order Intercept Point1 IIP3H1_1 f1=fRF, f2=fRF+100kHz, Pin=-30dBm dB RF IN VSWR1 VSWRi_1 2.16 2.05 - RF OUT VSWR1 VSWRo_1 1.91 1.93 - RF Characteristics2 （Low Gain Mode） General Condition: VDD=2.5 or 2.8V, VCTL=0V, fRF=750MHz, Zs=Zl=50ohm, Ta=+25oC With Application Circuit Parameter Symbol Small Signal Gain2 Gain2 Noise Figure2 Input Power 1dB Compression2 NF2 Condition IIP3_2 Unit VDD=2.5V VDD=2.8V Exclude Input & Output PCB, Connector Losses (0.11dB) -3.3 -3.3 dB Exclude PCB, Connector Losses (0.06dB) 2.1 2.1 dB 16.0 16.3 dBm 16.8 16.7 dBm P-1dB(IN)_2 Input 3rd Order Intercept Point2 Measurement Data f1=fRF, f2=fRF+100kHz, Pin=-20dBm RF IN VSWR2 VSWRi_2 1.90 1.89 - RF OUT VSWR2 VSWRo_2 2.33 2.29 - RF Characteristics3 General Condition: VDD=2.5 or 2.8V, fRF=750MHz, Zs=Zl=50ohm, Ta=+25oC With Application Circuit Parameter Gain Dynamic Range Symbol GDR Condition (Gain at High Gain Mode)-(Gain at Low Gain Mode) Measurement Data VDD=2.5V VDD=2.8V 20.2 20.8 Unit dB 1 Application Note 3 NJG1138HA8 APPLICATION CIRCUIT (Top View) 3 RFIN (700MHz) L2 12nH GND RF OUT (700MHz) RFOUT RFIN 13 4 2 L1 15nH L3 15nH Bias Circuit C2 0.01uF Logic Circuit GND C1 2pF VDD VCTL 5 1 VCTL (RX ATT) NC(GND) 1Pin Index 6 Parts List Parts ID L1, L2 L3 C1, C2 4 Comments MURATA LQP03T Series TDK MLK0603 Series MURATA GRM03 Series Truth table Control Voltage VCTL L H State LNA IDD OFF ON Bypass ON OFF “L”=0～0.3V、“H”=1.36～1.9V 2 Application Note 5 NJG1138HA8 PCB DESIGN VDD C2 RF IN L3 L2 L1 RF OUT C1 VCTL PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH=0.4mm (Z0=50ohm) PCB SIZE=17.0mm x 17.0mm CAUTION In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC. 3 Application Note NJG1138HA8 6 Characteristics I Typical characteristics (High Gain Mode, VDD=2.5V) Condition: Ta=+25oC, VDD=2.5V, VCTL=1.8V High Gain Pout vs. Pin High Gain Gain, IDD vs. Pin (f=750MHz) 10 (f=750MHz) 20 10 Gain 5 15 8 Gain (dB) Pout (dBm) 0 Pout -5 -10 10 6 5 4 0 2 IDD (mA) IDD -15 -20 P-1dB(IN)=-9.4dBm P-1dB(IN)=-9.4dBm -25 -40 -30 -20 -10 0 -5 -40 10 0 -30 -20 Pin (dBm) -10 0 10 Pin (dBm) High Gain OIP3,IIP3 vs. frequency High Gain Pout, IM3 vs. Pin (f1=700~800MHz, f2=f1+100kHz, Pin=-30dBm) (f1=750MHz, f2=f1+100kHz, Pin=-30dBm) 20 16 4 15 3 0 -40 -60 1 12 0 11 -1 IIP3 -20 -10 0 8 700 10 720 740 Pin (dBm) 760 780 -4 800 frequency (MHz) High Gain k factor vs. frequency High Gain NF, Gain vs. frequency (f=600~900MHz) 4 -2 -3 9 IIP3=-2.7dBm -30 13 10 IM3 -100 -40 2 IIP3 (dBm) -20 -80 OIP3 14 OIP3 (dBm) Pout, IM3 (dBm) Pout (f=50MHz~20GHz) 20 20 18 3.5 16 2.5 14 2 12 1.5 10 15 k factor 3 Gain(dB) NF (dB) Gain 10 5 1 8 NF 6 0.5 0 0 600 650 700 750 800 850 4 900 0 5 10 15 20 frequency(GHz) frequency (MHz) 4 Application Note NJG1138HA8 I Typical characteristics (High Gain Mode, VDD=2.5V) Condition: Ta=+25oC, VDD=2.5V, VCTL=1.8V S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (f=50MHz~20GHz) S21, S12 (f=50MHz~20GHz) 5 Application Note NJG1138HA8 I Typical characteristics (Low Gain Mode, VDD=2.5V) Condition: Ta=+25oC, VDD=2.5V, VCTL=0V Low Gain Pout vs. Pin Low Gain Gain, IDD vs. Pin (f=750MHz) (f=750MHz) 20 -2 240 Gain 10 -4 200 -6 160 -8 120 -20 -10 -30 80 P-1dB(IN)=+16.0dBm -40 IDD (uA) Pout -10 Gain (dB) Pout (dBm) 0 IDD -12 40 P-1dB(IN)=+16.0dBm -50 -40 -30 -20 -10 0 10 -14 20 0 -40 Pin (dBm) -30 -10 0 10 20 RF Power (dBm) Low Gain Pout, IM3 vs. Pin Low Gain OIP3,IIP3 vs. frequency (f1=750MHz, f2=f1+100kHz, Pin=-20dBm) (f1=700~800MHz, f2=f1+100kHz, Pin=-20dBm) 20 24 16 0 22 14 -20 Pout -40 -60 IM3 12 20 10 18 8 16 IIP3 -80 6 IIP3=+16.8dBm -100 -40 -30 -20 -10 0 10 4 700 20 Pin (dBm) 720 740 760 780 IIP3 (dBm) OIP3 OIP3 (dBm) Pout, IM3 (dBm) -20 14 12 800 frequency (MHz) Low Gain k factor vs. frequency Low Gain NF, Gain vs. frequency (f=50MHz~20GHz) (f=600~800MHz) 8 -4 6 -6 NF 4 -8 2 -10 15 k factor Gain 20 -2 Gain(dB) NF (dB) 10 10 5 0 0 600 650 700 750 800 850 -12 900 0 5 10 15 20 frequency(GHz) frequency (MHz) 6 Application Note NJG1138HA8 I Typical characteristics (Low Gain Mode, VDD=2.5V) Condition: Ta=+25oC, VDD=2.5V, VCTL=0V S11, S22 VSWR S11, S22 (f=50MHz~20GHz) S21, S12 Zin, Zout S21, S12 (f=50MHz~20GHz) 7 Application Note NJG1138HA8 I Typical characteristics (High Gain Mode, VDD=2.8V) Condition: Ta=+25oC, VDD=2.8V, VCTL=1.8V High Gain Pout vs. Pin High Gain Gain, IDD vs. Pin (f=750MHz) 10 (f=750MHz) 20 10 Gain 5 15 8 Gain (dB) Pout (dBm) 0 Pout -5 -10 10 6 5 4 0 2 IDD (mA) IDD -15 -20 P-1dB(IN)=-9.6dBm P-1dB(IN)=-9.6dBm -30 -20 -10 0 -5 -40 10 0 -30 -20 Pin (dBm) (f1=750MHz, f2=f1+100kHz, Pin=-30dBm) (f1=700~800MHz, f2=f1+100kHz, Pin=-30dBm) 0 OIP3 (dBm) Pout, IM3 (dBm) Pout -20 -40 -60 18 4 17 3 16 2 1 15 OIP3 14 -1 13 IIP3 -20 -10 0 10 700 10 Pin (dBm) (f=600~900MHz) 780 -4 800 18 2.5 14 2 12 1.5 10 8 NF 15 k factor Gain 20 Gain(dB) NF (dB) 760 (f=50MHz~20GHz) 20 16 10 5 6 0.5 0 600 740 High Gain k factor vs. frequency 3 1 720 frequency (MHz) High Gain NF, Gain vs. frequency 3.5 -2 -3 11 IIP3=-2.8dBm 4 0 12 IM3 -30 10 High Gain OIP3,IIP3 vs. frequency 20 -100 -40 0 Pin (dBm) High Gain Pout, IM3 vs. Pin -80 -10 IIP3 (dBm) -25 -40 650 700 750 800 frequency (MHz) 850 4 900 0 0 5 10 15 20 frequency(GHz) 8 Application Note NJG1138HA8 I Typical characteristics (High Gain Mode, VDD=2.8V) Condition: Ta=+25oC, VDD=2.8V, VCTL=1.8V S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (f=50MHz~20GHz) S21, S12 (f=50MHz~20GHz) 9 Application Note NJG1138HA8 I Typical characteristics (Low Gain Mode, VDD=2.8V) Condition: Ta=+25oC, VDD=2.8V, VCTL=0V Low Gain Pout vs. Pin Low Gain Gain, IDD vs. Pin (f=750MHz) (f=750MHz) 20 -2 240 Gain 10 -4 200 -6 160 -8 120 -20 -10 -30 80 P-1dB(IN)=+16.3dBm -40 IDD (uA) Pout -10 Gain (dB) Pout (dBm) 0 IDD -12 40 P-1dB(IN)=+16.3dBm -50 -40 -30 -20 -10 0 10 -14 20 0 -40 Pin (dBm) -30 -10 0 10 20 RF Power (dBm) Low Gain Pout, IM3 vs. Pin Low Gain OIP3,IIP3 vs. frequency (f1=750MHz, f2=f1+100kHz, Pin=-20dBm) (f1=700~800MHz, f2=f1+100kHz, Pin=-20dBm) 20 16 0 14 24 22 -20 Pout -40 -60 12 20 10 18 8 16 IM3 -80 IIP3 6 IIP3 (dBm) OIP3 OIP3 (dBm) Pout, IM3 (dBm) -20 14 IIP3=+16.7dBm -100 -40 -30 -20 -10 0 10 4 700 20 Pin (dBm) 740 760 780 12 800 frequency (MHz) Low Gain NF, Gain vs. frequency Low Gain k factor vs. frequency (f=600~800MHz) 10 720 Gain 8 (f=50MHz~20GHz) -2 20 -4 -6 NF 4 -8 2 -10 k factor 6 Gain(dB) NF (dB) 15 10 5 0 600 650 700 750 800 frequency (MHz) 850 -12 900 0 0 5 10 15 20 frequency(GHz) 10 Application Note NJG1138HA8 I Typical characteristics (Low Gain Mode, VDD=2.8V) Condition: Ta=+25oC, VDD=2.8V, VCTL=0V S11, S22 VSWR S11, S22 (f=50MHz~20GHz) S21, S12 Zin, Zout S21, S12 (f=50MHz~20GHz) 11