NJRC NJG1135MD7

NJG1135MD7
CDMA DUAL BAND LNA GaAs MMIC
! GENERAL DESCRIPTION
The NJG1135MD7 is a GaAs LNA MMIC designed for CDMA2000 dual
band (Cellular and PCS) application. The NJG1135MD7 has LNA
pass-through function to select high gain mode or low gain.
The NJG1135MD7 achieved high IIP3 and low noise figure at the high
gain mode, and low current consumption at the low gain mode.
An ultra-small and ultra-thin EQFN14-D7 package is adopted.
! FEATURES
"Low voltage operation
"Low control voltage operation
! PACKAGE OUTLINE
NJG1135MD7
+2.8V typ.
+1.8V min.
[LNA high gain mode]
"High input IP3
+10dBm typ.
+8dBm typ.
+16dB typ.
1.4dB typ.
"High gain
"Low noise figure
[LNA low gain mode]
"Low current consumption
"High input IP3
@ f=880MHz
@ f=1960MHz
@ f=880MHz / 1960MHz
@ f=880MHz / 1960MHz
30uA typ.
+19dBm typ. @ f=880MHz
+17dBm typ. @ f=1960MHz
EQFN14-D7 (Package size: 1.6x1.6x0.397mm typ., Lead and Halogen-Free)
" Ultra-small and ultra-thin package
! PIN CONFIGURATION
(Top View)
11
10
9
8
12
Cellular
7
13
PCS
6
14
5
1
2
3
Pin Connection
1. GND
2. VCTL2
3. VCTL1
4. GND
5. RFOUT1
6. RFOUT2
7. GND
8. GND
9. GND
10. GND
11. GND
12. RFIN2
13. RFIN1
14. GND
4
! TRUETH TABLE
“H”=VCTL(H), “L”=VCTL(L)
VCTL1
VCTL2
L
L
H
H
L
H
L
H
Cellular band
LNA
Bypass
OFF
ON
ON
OFF
OFF
ON
ON
OFF
PCS band
LNA
Bypass
OFF
ON
OFF
ON
ON
OFF
ON
OFF
Note: Specifications and description listed in this datasheet are subject to change without notice.
Ver. 2008-10-31
-1-
NJG1135MD7
! ABSOLUTE MAXIMUM RATINGS
(Ta=+25°C, Zs=Zl=50Ω)
PARAMETERS
SYMBOL
Supply voltage
VDD
Control voltage
VCTL
CONDITIONS
RATINGS
UNITS
5.0
V
VCTL1, VCTL2 terminal
5.0
V
Input power
Pin
VDD=2.8V
+15
dBm
Power dissipation
PD
4-layer FR4 PCB with through-hole
(74.2x74.2mm), Tj=150°C
1300
mW
Operating temperature
Topr
-40~+85
°C
Storage temperature
Tstg
-55~+150
°C
! ELECTRICAL CHARACTERISTICS 1 (DC CHARACTERISTICS)
(General Conditions: VDD=2.8V, Ta=+25°C, Zs=Zl=50Ω)
PARAMETERS
MIN
TYP
MAX
UNITS
VDD
2.65
2.8
2.95
V
Control voltage (High)
VCTL(H)
1.8
2.8
2.95
V
Control voltage (Low)
VCTL(L)
-0.3
0
0.3
V
Operating voltage
Operating current1
(Cellular Band High Gain mode)
Operating current2
(PCS Band High Gain mode)
Operating current3
SYMBOL
IDD1
IDD2
CONDITIONS
RF OFF,
VCTL1=0V, VCTL2=2.8V
RF OFF,
VCTL1=2.8V, VCTL2=0V
RF OFF,
VCTL1=0V, VCTL2=0V
-
10
14
mA
-
10
14
mA
-
30
60
μA
(LNA all off mode)
IDD3
Control current1
ICTL1
RF OFF, VCTL1=2.8V
-
17
30
μA
Control current2
ICTL2
RF OFF, VCTL2=2.8V
-
17
30
μA
-2-
NJG1135MD7
! ELECTRICAL CHARACTERISTICS 2 (Cellular Band: LNA High Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
PARAMETERS
Small signal gain 1
Noise figure 1
1dB gain compression
input power 1
3rd order input
intercept point 1
SYMBOL
Gain1
NF1
CONDITIONS
Exclude PCB, Connector Losses
(input and output) 0.11dB
Exclude PCB, Connector Losses
(input) 0.06dB
P-1dB_1
IIP3_1
f1=fRF, f2=fRF+100kHz,
Pin=-25dBm
MIN
TYP
MAX
UNITS
14.5
16.0
-
dB
-
1.4
1.8
dB
-8
-4
-
dBm
+7
+10
-
dBm
RF IN VSWR 1
VSWRi _1
-
1.5
2.0
RF OUT VSWR 1
VSWRo_1
-
1.5
2.0
! ELECTRICAL CHARACTERISTICS 3 (Cellular Band: LNA Low Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=0V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
PARAMETERS
Small signal gain 2
Noise figure 2
1dB gain compression
input power 2
3rd order input
intercept point 2
SYMBOL
Gain2
NF2
CONDITIONS
Exclude PCB, Connector Losses
(input and output) 0.11dB
Exclude PCB, Connector Losses
(input and output) 0.11dB
P-1dB_2
IIP3_2
f1=fRF, f2=fRF+100kHz,
Pin=-12dBm
MIN
TYP
MAX
UNITS
-4.0
-2.5
-
dB
-
2.5
5.0
dB
+3.5
+10.5
-
dBm
+15
+19
-
dBm
RF IN VSWR 2
VSWRi _2
-
2.0
2.5
RF OUT VSWR 2
VSWRo_2
-
1.5
2.0
-3-
NJG1135MD7
! ELECTRICAL CHARACTERISTICS 4 (PCS Band: LNA High Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=2.8V, VCTL2=0V, fRF=1960MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
PARAMETERS
Small signal gain 3
Noise figure 3
1dB gain compression
input power 3
3rd order input
intercept point 3
SYMBOL
Gain3
NF3
CONDITIONS
Exclude PCB, Connector Losses
(input and output) 0.22dB
Exclude PCB, Connector Losses
(input) 0.12dB
P-1dB_3
IIP3_3
f1=fRF, f2=fRF+100kHz,
Pin=-25dBm
MIN
TYP
MAX
UNITS
14.5
16.0
-
dB
-
1.4
1.8
dB
-10
-6
-
dBm
+5
+8
-
dBm
RF IN VSWR 3
VSWRi _3
-
2.3
3.1
RF OUT VSWR 3
VSWRo_3
-
1.5
2.2
! ELECTRICAL CHARACTERISTICS 5 (PCS Band: LNA Low Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=0V, fRF=1960MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
PARAMETERS
Small signal gain 4
Noise figure 4
1dB gain compression
input power 4
3rd order input
intercept point 4
SYMBOL
Gain4
NF4
CONDITIONS
Exclude PCB, Connector Losses
(input and output) 0.22dB
Exclude PCB, Connector Losses
(input and output) 0.22dB
P-1dB_4
IIP3_4
f1=fRF, f2=fRF+100kHz,
Pin=-12dBm
MIN
TYP
MAX
UNITS
-5.0
-3.5
-
dB
-
4.0
5.5
dB
+1.5
+8.5
-
dBm
+13
+17
-
dBm
RF IN VSWR 4
VSWRi _4
-
2.3
2.9
RF OUT VSWR 4
VSWRo_4
-
1.5
2.0
-4-
NJG1135MD7
! TERMINAL INFOMATION
No.
SYMBOL
DESCRIPTION
1
GND
2
VCTL2
3
VCTL1
4
GND
5
RFOUT1
6
RFOUT2
7
GND
Ground terminal. This terminal is not connected with internal circuit.
8
GND
Ground terminal.
9
GND
Ground terminal. This terminal is not connected with internal circuit.
10
GND
Ground terminal. This terminal is not connected with internal circuit.
11
GND
Ground terminal.
12
RFIN2
13
RFIN1
14
GND
Ground terminal.
Control port 2. This terminal is set to more than +1.8V~+2.95V of logical high level
for high gain mode of cellular band LNA, and set to –0.3V~+0.3V of logical low
level for low gain mode of cellular band LNA.
Control port 1. This terminal is set to more than +1.8V~+2.95V of logical high level
for high gain mode of PCS band LNA, and set to –0.3V~+0.3V of logical low level
for low gain mode of PCS band LNA.
Ground terminal.
RF output terminal of PCS band signal. RF signal and DC power is input through
external matching circuit connected to this terminal. External matching circuit and
DC blocking capacitor are required.
RF output terminal of cellular band signal. RF signal and DC power is input
through external matching circuit connected to this terminal. External matching
circuit and DC blocking capacitor are required.
RF input
matching
required.
RF input
matching
required.
terminal of cellular band signal. RF signal is input through external
circuit connected to this terminal. A DC blocking capacitor is not
terminal of PCS band signal. RF signal is input through external
circuit connected to this terminal. A DC blocking capacitor is not
Ground terminal. This terminal is not connected with internal circuit.
Notes:
1) Ground terminal (No.1, 4, 8, and 11) should be connected with the ground plane as close as possible
for good RF performance, because distance to GND makes parasitic inductance.
-5-
NJG1135MD7
! ELECTRICAL CHARACTERISTICS (Cellular Band: LNA High Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
Pout vs. Pin
Gain, IDD vs. Pin
f=880MHz
f=880MHz
20
20
Gain (dB)
Pout
0
-10
15
14
10
12
IDD (mA)
Gain
10
Pout (dBm)
16
IDD
5
10
-20
P-1dB(IN)=-4.5dBm
-30
-20
P-1dB(IN)=-4.5dBm
-10
0
0
-40
10
-30
OIP3, IIP3 vs. frequency
f1=880MHz, f2=f1+100kHz
f1=840~920MHz, f2=f1+100kHz, Pin=-25dBm
26
20
25
Pout
-20
8
10
0
Pout, IM3 vs. Pin
40
0
-10
Pin (dBm)
OIP3 (dBm)
Pout, IM3 (dBm)
Pin (dBm)
-20
IM3
-40
-60
-80
14
13
OIP3
24
12
23
11
22
10
21
IIP3
9
20
8
19
7
IIP3=+9.8dBm
-100
-30
-20
-10
0
10
6
18
840 850 860 870 880 890 900 910 920
20
Pin (dBm)
frequency (MHz)
Gain, NF vs. frequency
f=750~1000MHz
4
18
3.5
17
3
15
2.5
14
2
13
1.5
NF
12
0.5
11
10
750
800
850
900
frequency (MHz)
-6-
1
950
0
1000
NF (dB)
Gain (dB)
16
Gain
IIP3 (dBm)
-30
-40
NJG1135MD7
! ELECTRICAL CHARACTERISTICS (Cellular Band: LNA High Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
S11, S22
S21, S12
VSWR
Zin, Zout
S11, S22 (~20GHz)
S21, S12 (~20GHz)
-7-
NJG1135MD7
! ELECTRICAL CHARACTERISTICS (Cellular Band: LNA High Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Zs=Zl=50Ω, with application circuit)
Gain, NF vs. Temperature
P-1dB(IN) vs. Temperature
f=880MHz
f=880MHz
18
3.5
Gain
3
15
2.5
14
2
13
1.5
NF
12
P-1dB(IN) (dBm)
16
1
11
10
-40
P-1dB(IN)
-4
NF (dB)
Gain (dB)
17
-2
4
-6
-8
-10
0.5
-20
0
20
40
60
80
-12
-40
0
100
-20
0
o
20
40
60
80
100
o
Temperature ( C)
Temperature ( C)
VSWRi, VSWRo vs. Temperature
OIP3, IIP3 vs. Temperature
f=880MHz
f1=880MHz, f2=f1+100kHz, Pin=-25dBm
27
3
13
OIP3
26
12
11
24
10
23
9
IIP3
VSWRi, VSWRo
25
IIP3 (dBm)
OIP3 (dBm)
2.5
2
VSWRi
1.5
22
8
VSWRo
21
-40
-20
0
20
40
60
80
1
-40
7
100
-20
0
IDD, ICTL2 vs. Temperature
60
35
12
30
IDD
20
15
6
15
ICTL2
4
10
2
K factor
20
ICTL2 (uA)
25
8
10
5
o
Ta=-40oC
Ta=25 C
o
Ta=60 C
Ta=0 C
Ta=85 C
o
Ta=-20 C
5
o
-20
0
20
40
60
o
Temperature ( C)
-8-
100
f=50M~20GHz
14
0
-40
80
K factor vs. frequency
RF off
IDD (mA)
40
Temperature ( C)
Temperature ( C)
10
20
o
o
80
0
100
0
0
5
10
o
15
frequency (GHz)
20
NJG1135MD7
! ELECTRICAL CHARACTERISTICS (Cellular Band: LNA Low Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
Pout vs. Pin
Gain, IDD vs. Pin
f=880MHz
0
-2
Pout
-10
-20
250
Gain
200
-4
150
-6
100
IDD (uA)
0
Gain (dB)
Pout (dBm)
f=880MHz
10
IDD
-30
-8
50
P-1dB(IN)=-+13.0dBm
-20
-10
0
P-1dB(IN)=+13.0dBm
10
-10
-30
20
-20
Pin (dBm)
0
10
0
20
Pin (dBm)
Pout, IM3 vs. Pin
OIP3, IIP3 vs. frequency
f1=840~920MHz, f2=f1+100kHz, Pin=-12dBm
f1=880MHz, f2=f1+100kHz
40
26
26
20
25
25
0
24
24
Pout
IIP3
OIP3 (dBm)
Pout, IM3 (dBm)
-10
-20
-40
-60
23
23
22
22
21
21
20
IM3
-80
OIP3
IIP3 (dBm)
-40
-30
20
19
19
IIP3=+23.5dBm
-100
-20
-10
0
10
20
18
18
840 850 860 870 880 890 900 910 920
30
Pin (dBm)
frequency (MHz)
Gain, NF vs. frequency
f=750~1000MHz
0
8
-1
7
6
Gain
-3
5
-4
4
-5
3
-6
2
NF
-7
-8
750
800
850
900
950
NF (dB)
Gain (dB)
-2
1
0
1000
frequency (MHz)
-9-
NJG1135MD7
! ELECTRICAL CHARACTERISTICS (Cellular Band: LNA Low Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
S11, S22
- 10 -
S21, S12
VSWR
Zin, Zout
S11, S22 (~20GHz)
S21, S12 (~20GHz)
NJG1135MD7
! ELECTRICAL CHARACTERISTICS (Cellular Band: LNA Low Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Zs=Zl=50Ω, with application circuit)
P-1dB(IN) vs. Temperature
Gain, NF vs. Temperature
f=880MHz
f=880MHz
8
-1
7
Gain
6
-3
5
-4
4
-5
3
NF
-6
2
-7
1
-8
-40
-20
P-1dB(IN)
14
0
20
40
60
80
NF (dB)
Gain (dB)
-2
16
P-1dB(IN) (dBm)
0
12
10
8
6
4
-40
0
100
-20
0
20
OIP3, IIP3 vs. Temperature
26
26
2.5
24
IIP3
22
20
20
18
18
16
16
0
20
40
60
80
IIP3 (dBm)
OIP3 (dBm)
OIP3
3
VSWRi, VSWRo
28
-20
100
f=880MHz
28
14
-40
80
VSWRi, VSWRo vs. Temperature
f1=880MHz, f2=f1+100kHz, Pin=-12dBm
22
60
Temperature ( C)
Temperature ( C)
24
40
o
o
VSWRi
2
1.5
VSWRo
1
-40
14
100
-20
0
o
20
40
60
80
100
o
Temperature ( C)
Temperature ( C)
IDD vs. Temperature
K factor vs. frequency
RF off
f=50M~20GHz
60
20
50
15
30
K factor
IDD (uA)
40
IDD
10
20
5
o
Ta=-40oC
10
Ta=25 C
o
Ta=60 C
Ta=0 C
Ta=85 C
o
Ta=-20 C
o
0
-40
0
-20
0
20
40
60
o
Temperature ( C)
80
100
0
5
10
o
15
20
frequency (GHz)
- 11 -
NJG1135MD7
! ELECTRICAL CHARACTERISTICS (PCS Band: LNA High Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
Pout vs. Pin
Gain, IDD vs. Pin
f=1960MHz
f=1960MHz
20
20
14
Gain
-10
15
12
10
10
5
-20
-20
P-1dB(IN)=-6.3dBm
-10
0
0
-40
10
-30
-10
0
6
10
Pin (dBm)
Pout, IM3 vs. Pin
OIP3, IIP3 vs. frequency
f1=1960MHz, f2=f1+100kHz
f1=1.9~2.0GHz, f2=f1+100kHz, Pin=-25dBm
40
26
14
20
25
13
0
Pout
24
OIP3 (dBm)
Pout, IM3 (dBm)
Pin (dBm)
-20
-20
-40
IM3
-60
-80
OIP3
12
23
11
22
10
IIP3
21
9
20
8
19
7
IIP3=+8.2dBm
-100
-30
-20
-10
0
10
18
1.9
20
Gain, NF vs. frequency
f=1.8~2.1GHz
18
4
17
3.5
2.5
14
2
13
1.5
NF
12
0.5
11
1.85
1.9
1.95
2
frequency (GHz)
- 12 -
1
2.05
0
2.1
NF (dB)
Gain (dB)
3
Gain
15
10
1.8
1.94
1.96
frequency (GHz)
Pin (dBm)
16
1.92
1.98
2
6
IIP3 (dBm)
-30
8
IDD
P-1dB(IN)=-6.3dBm
-30
-40
IDD (mA)
Pout
0
Gain (dB)
Pout (dBm)
10
NJG1135MD7
! ELECTRICAL CHARACTERISTICS (PCS Band: LNA High Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
S11, S22
S21, S12
VSWR
Zin, Zout
S11, S22 (~20GHz)
S21, S12 (~20GHz)
- 13 -
NJG1135MD7
! ELECTRICAL CHARACTERISTICS (PCS Band: LNA High Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Zs=Zl=50Ω, with application circuit)
Gain, NF vs. Temperature
P-1dB(IN) vs. Temperature
f=1960MHz
f=1960MHz
18
3.5
Gain
3
15
2.5
14
2
13
1.5
NF
12
1
11
10
-40
P-1dB(IN) (dBm)
-4
16
NF (dB)
Gain (dB)
17
-2
4
-6
P-1dB(IN)
-8
-10
0.5
-20
0
20
40
60
80
-12
-40
0
100
-20
0
o
20
40
60
80
100
o
Temperature ( C)
Temperature ( C)
OIP3, IIP3 vs. Temperature
VSWRi, VSWRo vs. Temperature
f1=1960MHz, f2=f1+100kHz, Pin=-25dBm
26
f=1960MHz
3
12
OIP3
25
11
24
10
23
9
8
VSWRi, VSWRo
IIP3
22
IIP3 (dBm)
OIP3 (dBm)
2.5
VSWRi
2
1.5
21
20
-40
VSWRo
7
-20
0
20
40
60
80
1
-40
6
100
-20
0
o
20
40
60
Temperature ( C)
K factor vs. frequency
RF off
f=50M~20GHz
14
35
12
30
20
o
Ta=-40oC
Ta=25 C
o
Ta=60 C
Ta=0 C
Ta=85 C
o
Ta=-20 C
o
15
ICTL1
4
10
2
5
-20
0
20
40
60
o
Temperature ( C)
- 14 -
80
0
100
K factor
6
ICTL1 (uA)
IDD (mA)
20
o
15
25
IDD
8
0
-40
100
Temperature ( C)
IDD, ICTL1 vs. Temperature
10
80
o
10
5
0
0
5
10
15
frequency (GHz)
20
NJG1135MD7
! ELECTRICAL CHARACTERISTICS (PCS Band: LNA Low Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
Pout vs. Pin
Gain, IDD vs. Pin
f=1960MHz
10
0
250
0
-2
200
-20
-30
-4
150
-6
100
-8
-10
0
P-1dB(IN)=+9.0dBm
10
-10
-30
20
-20
0
10
0
20
Pin (dBm)
Pout, IM3 vs. Pin
OIP3, IIP3 vs. frequency
f1=1960MHz, f2=f1+100kHz
f1=1.9~2.0GHz, f2=f1+100kHz, Pin=-12dBm
40
22
22
20
21
21
20
20
0
Pout
OIP3 (dBm)
Pout, IM3 (dBm)
Pin (dBm)
-10
-20
-40
IM3
-60
19
18
18
17
17
16
-80
IIP3
19
OIP3
IIP3 (dBm)
-20
50
IDD
P-1dB(IN)=+9.0dBm
-40
-30
IDD (uA)
Gain
Pout
-10
Gain (dB)
Pout (dBm)
f=1960MHz
16
15
15
IIP3=+19.5dBm
-100
-20
-10
0
10
20
14
1.9
30
Pin (dBm)
1.92
1.94
1.96
1.98
2
14
frequency (GHz)
Gain, NF vs. frequency
9
-1
8
-2
7
-3
6
Gain
-4
5
-5
4
NF
-6
3
2
-7
-8
1.8
NF (dB)
Gain (dB)
f=1.8~2.1GHz
0
1.85
1.9
1.95
2
2.05
1
2.1
frequency (GHz)
- 15 -
NJG1135MD7
! ELECTRICAL CHARACTERISTICS (PCS Band: LNA Low Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
S11, S22
VSWR
S11, S22 (~20GHz)
- 16 -
S21, S12
Zin, Zout
S21, S12 (~20GHz)
NJG1135MD7
! ELECTRICAL CHARACTERISTICS (PCS Band: LNA Low Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Zs=Zl=50Ω, with application circuit)
Gain, NF vs. Temperature
P-1dB(IN) vs. Temperature
f=1960MHz
-1
7
-2
6
-3
Gain
NF
4
-5
3
-6
2
-7
1
-20
0
20
40
60
80
14
5
-4
-8
-40
16
P-1dB(IN) (dBm)
8
NF (dB)
Gain (dB)
f=1960MHz
0
12
P-1dB(IN)
10
8
6
4
-40
0
100
-20
0
o
24
20
22
OIP3
18
20
IIP3
18
14
16
12
14
40
60
80
3
2.5
VSWRi, VSWRo
22
20
100
f=1960MHz
26
IIP3 (dBm)
OIP3 (dBm)
f1=1960MHz, f2=f1+100kHz, Pin=-12dBm
0
80
VSWRi, VSWRo vs. Temperature
24
-20
60
Temperature ( C)
OIP3, IIP3 vs. Temperature
10
-40
40
o
Temperature ( C)
16
20
VSWRi
2
VSWRo
1.5
1
-40
12
100
-20
0
o
20
40
60
80
100
o
Temperature ( C)
Temperature ( C)
IDD vs. Temperature
K factor vs. frequency
RF off
f=50M~20GHz
60
20
50
15
30
K factor
IDD (uA)
40
IDD
10
20
5
Ta=25oC
Ta=-40oC
10
o
Ta=60 C
Ta=0 C
Ta=85 C
o
Ta=-20 C
o
0
-40
0
-20
0
20
40
60
o
Temperature ( C)
80
100
0
5
10
o
15
20
frequency (GHz)
- 17 -
NJG1135MD7
! APPLICATION CIRCUIT
V
DD
2.8V
L5
L6
15n
10n
11
10
12
Cellular
RFIN1
13
PCS
4.7n
8
7
L7
10n
0.01u
L4
4.7n
C2
100p
6
RFOUT2
L2
15n
14
5
RFOUT1
L3
1
2
V
2.8V / 0V
4
3
2
CTL
V
6.8n
1
CTL
2.8V / 0V
Parts list
Parts ID
L1, L2, L4
L3
- 18 -
C3
L8
12n
RFIN2
L1
9
Comments
MURATA (LQP03T Series)
TDK (MLK0603 Series)
L5~L8
TAIYO-YUDEN (HK1005 Series)
C1~C3
MURATA (GRM03 Series)
C1
100p
NJG1135MD7
! TEST PCB LAYOUT
(TOP VIEW)
RFIN2 (Cellular)
RFOUT2 (Cellular)
L5
L6
L7
C2
L8
L1
L2
L3
L4 C3
C1
RFIN1 (PCS)
VDD
VCTL2
VCTL1
RFOUT1 (PCS)
PCB (FR-4):
t=0.2mm
MICROSTRIP LINE WIDTH=0.4mm (Z0=50ohm)
PCB SIZE=17.0mm x 17.0mm
PRECAUTION:
In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC.
- 19 -
NJG1135MD7
! PACKAGE OUTLINE (EQFN14-D7)
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this product, please obey the relating law of your country.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to
avoid these damages.
- 20 -
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.