NJG1139UA2 UHF BAND LOW NOISE AMPLIFIER GaAs MMIC ! GENERAL DESCRIPTION The NJG1139UA2 is a low noise amplifier GaAs MMIC designed for mobile digital TV application (470~770 MHz). This IC has a LNA pass-through function to select high gain mode or low gain mode by single bit control. Also, the ESD protection circuit is integrated into the IC to achieve high ESD tolerance. An ultra-small and ultra-thin package of EPFFP6-A2 is adopted. ! FEATURES " Low voltage operation " Low voltage control " Package " External matching parts [High gain mode] " Low current consumption " High gain " Low noise figure " High input IP3 [Low gain mode] " Low current consumption " Gain (Low loss) " High input IP3 ! PACKAGE OUTLINE NJG1139UA2 +1.8V typ. +1.8V typ. EPFFP6-A2 (Package size: 1.0mm x 1.0mm x 0.37mm typ.) 2pcs. 3.5mA typ. 14.0dB typ. 1.2dB typ. -4.0dBm typ. 11µA typ. -2.0dB typ. +30.0dBm typ. ! PIN CONFIGURATION (Top View) 6 RFIN 5 VCTL 4 GND Logic circuit 1PIN INDEX 1 VDD GND RFOUT 2 Pin Connection 1. GND 2. VDD 3. RFOUT 4. VCTL 5. GND 6. RFIN 3 ! TRUTH TABLE “H”=VCTL(H), “L”=VCTL(L) VCTL LNA ON Bypass LNA mode H ON OFF High Gain mode L OFF ON Low Gain mode Note: Specifications and description listed in this datasheet are subject to change without notice. Ver.2009-9-18 -1- NJG1139UA2 ! ABSOLUTE MAXIMUM RATINGS Ta=+25°C, Zs=Zl=50 ohm PARAMETER SYMBOL CONDITIONS RATINGS UNITS Drain voltage VDD 5.0 V Control voltage VCTL 5.0 V Input power PIN VDD=1.8V +15 dBm Power dissipation PD 4-layer FR4 PCB with through-hole (101.5x114.5mm), Tj=150°C 590 mW Operating temperature Topr -40~+95 °C Storage temperature Tstg -55~+150 °C ! ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS) General conditions: VDD=1.8V, Ta=+25°C, Zs=Zl=50 ohm, with application circuit PARAMETERS MIN TYP MAX UNITS VDD 1.7 1.8 3.6 V Control voltage (High) VCTL(H) 1.5 1.8 3.6 V Control voltage (Low) VCTL(L) 0 0 0.4 V Operating voltage SYMBOL CONDITIONS Operating current1 IDD1 RF OFF, VCTL=1.8V - 3.5 5.0 mA Operating current2 IDD2 RF OFF, VCTL=0V - 11 25 µA Control current ICTL RF OFF, VCTL=1.8V - 6 10 µA -2- NJG1139UA2 ! ELECTRICAL CHARACTERISTICS2 (High Gain mode) General conditions: VDD=1.8V, VCTL=1.8V, Ta=+25°C, Zs=Zl=50 ohm, with application circuit PARAMETERS Operating frequency Small signal gain1 Noise figure SYMBOL MIN TYP MAX UNITS fRF 470 620 770 MHz Gain1 11.0 14.0 17.0 dB - 1.2 1.7 dB -18.0 -12.0 - dBm -8.0 -4.0 - dBm NF CONDITIONS Exclude PCB & connector losses*1 Input power at 1dB gain compression point1 P-1dB(IN)1 Input 3rd order intercept point1 IIP3_1 RF IN VSWR1 VSWRi1 - 1.5 4.9 - RF OUT VSWR1 VSWRo1 - 1.5 3.0 - f1=fRF, f2=fRF+100kHz, PIN=-25dBm ! ELECTRICAL CHARACTERISTICS3 (Low Gain mode) General conditions: VDD=1.8V, VCTL=0V, Ta=+25°C, Zs=Zl=50 ohm, with application circuit PARAMETERS Operating frequency Small signal gain2 SYMBOL CONDITIONS fRF Gain2 Exclude PCB & connector losses*2 MIN TYP MAX UNITS 470 620 770 MHz -2.5 -2.0 - dB +5.0 +15.0 - dBm +15.0 +30.0 - dBm Input power at 1dB gain compression point2 P-1dB(IN)2 Input 3rd order intercept point2 IIP3_2 RF IN VSWR2 VSWRi2 - 1.5 2.5 - RF OUT VSWR2 VSWRo2 - 1.5 2.5 - f1=fRF, f2=fRF+100kHz, PIN=-8dBm *1 Input PCB and connector losses: 0.033dB(at 470MHz), 0.047dB(at 770MHz) *2 Input & output PCB and connector losses: 0.057dB(at 470MHz), 0.085dB(at 770MHz) -3- NJG1139UA2 ! TERMINAL INFORMATION -4- No. SYMBOL DESCRIPTION 1 GND Ground terminal. These terminals should be connected to the ground plane as close as possible for excellent RF performance. 2 VDD This terminal is a power supply terminal of LNA and the logic circuit. Inductor L2 as shown in the application circuit is a part of an external matching circuit, and also provide DC power to LNA. 3 RFOUT 4 VCTL Control voltage supply terminal. 5 GND Ground terminal. These terminals should be connected to the ground plane as close as possible for excellent RF performance. 6 RFIN RF input terminal. The RF signal is input through external matching circuit connected to this terminal. Since this IC is integrated an input DC blocking capacitor. RF input terminal. Since this IC is integrated an input DC blocking capacitor. NJG1139UA2 ! ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: Ta=+25°C, VDD=1.8V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit Pout vs. Pin Gain, IDD vs. Pin (f=620MHz) (f=620MHz) 10 Pout Gain (dB) 0 -5 -10 15 15 10 10 IDD (mA) Gain 5 Pout (dBm) 20 20 15 -15 -25 -30 -40 IDD 5 -20 P-1dB(IN)=-12.0dBm -35 -30 -25 -20 -15 5 P-1dB(IN)=-12.0dBm -10 -5 0 -40 0 0 -35 -30 -25 Pin (dBm) -20 -15 -10 -5 0 Pin (dBm) Pout, IM3 vs. Pin Gain,NF vs.frequency (f1=620MHz, f2=f1+100kHz) (f=400~900MHz) 20 Pout 19 4 18 3.5 17 3 -20 IM3 -40 16 2.5 15 2 14 1.5 13 1 NF -60 12 IIP3=-3.1dBm NF (dB) Gain Gain (dB) Pout, IM3 (dBm) 0 0.5 (NF:Exclude PCB,Connector Losses) -80 -30 -25 -20 -15 -10 -5 0 5 11 400 10 500 600 Pin (dBm) 700 800 0 900 freqency (MHz) P-1dB(IN) vs. frequency OIP3, IIP3 vs. frequency (f=400~900MHz) (f1=400~900MHz, f2=f1+100kHz, Pin=-25dBm) 0 20 -10 OIP3, IIP3 (dBm) P-1dB(IN) (dBm) 15 -5 P-1dB(IN) 10 OIP3 5 0 -15 -5 -20 400 500 600 700 frequency (MHz) 800 900 -10 400 IIP3 500 600 700 800 900 frequency (MHz) -5- NJG1139UA2 ! ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: Ta=+25°C, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit P-1dB(IN) vs. VDD Gain, NF vs. VDD (f=620MHz) (f=620MHz) 19 0 4 18 3.5 3 16 2.5 15 2 14 1.5 13 P-1dB(IN) (dBm) 17 NF (dB) Gain (dB) Gain 12 0.5 11 0 1 1.5 2 -10 -15 1 NF -5 2.5 3 3.5 -20 4 1 1.5 2 VDD (V) 2.5 3 3.5 4 3.5 4 VDD (V) OIP3, IIP3 vs. VDD VSWR vs. V DD (f=620MHz) (f=620MHz) 25 3 2.5 OIP3 15 VSWRo VSWR OIP3, IIP3 (dBm) 20 10 5 0 IIP3 2 1.5 VSWRi -5 -10 1 1 1.5 2 2.5 3 3.5 4 VDD (V) (RF off) 10 IDD (mA) 8 6 4 2 0 1.5 2 2.5 VDD (V) -6- 1.5 2 2.5 VDD (V) IDD vs. V DD 1 1 3 3.5 4 3 NJG1139UA2 ! ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VDD=1.8V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit Gain, NF vs. Temperature P-1dB(IN) vs. Temperature (f=620MHz) 4 18 3.5 17 3 Gain 16 2.5 15 2 14 1.5 NF 13 1 12 0.5 11 -40 -20 0 20 40 60 80 0 P-1dB(IN) (dBm) 19 NF (dB) Gain (dB) (f=620MHz) -5 P-1dB(IN) -10 -15 -20 -40 0 100 -20 0 o 40 60 80 100 o Temperature ( C) Temperature ( C) OIP3, IIP3 vs. Temperature VSWR vs. Temperature (f1=620MHz, f2=f1+100kHz, Pin=-25dBm) (f=620MHz) 20 3 OIP3 15 VSWRo 2.5 10 VSWR OIP3, IIP3 (dBm) 20 5 2 VSWRi 0 1.5 -5 -10 -40 IIP3 -20 0 20 40 60 80 1 -40 100 -20 0 Temperature ( oC) 20 40 60 80 100 Temperature ( oC) IDD vs. Temperature K factor vs. Temperature (RF off) (f=50MHz~20GHz) 10 20 8 K factor IDD (mA) 15 6 -40(oC) 10 -20(oC) 0(oC) 4 25(oC) 60(oC) 5 85(oC) 2 95(oC) 0 -40 0 -20 0 20 40 60 o Temperature ( C) 80 100 0 5 10 15 20 Frequency (GHz) -7- NJG1139UA2 ! ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: Ta=+25°C, VDD=1.8V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit -8- S11, S22 S21, S12 VSWRi, VSWRo Zin, Zout S11, S22 (50MHz~20GHz) S21, S12 (50MHz~20GHz) NJG1139UA2 ! ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: Ta=+25°C, VDD=1.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit Pout vs. Pin Gain, IDD vs. Pin (f=620MHz) (f=620MHz) 20 0 10 15 -1 Gain 8 0 -5 -2 6 -3 4 IDD (mA) Pout 5 Gain (dB) Pout (dBm) 10 -10 -4 P-1dB(IN)=+15.0dBm -15 -20 -20 -15 -10 -5 0 5 P-1dB(IN)=+15.0dBm 10 15 -5 -20 20 2 IDD 0 -15 -10 -5 0 5 10 15 20 Pin (dBm) Pin (dBm) Pout, IM3 vs. Pin Gain vs. frequency (f1=620MHz, f2=f1+100kHz) (f=400~900MHz) 40 0 20 -1 Pout Gain Gain(dB) Pout, IM3 (dBm) 0 -20 -40 -2 -3 IM3 -60 -4 IIP3=+30.4dBm -80 (Gain:Exclude PCB,Connector Losses) -100 -20 -10 0 10 20 -5 400 30 500 Pin (dBm) 700 800 P-1dB(IN) vs. frequency OIP3, IIP3 vs. frequency (f=400~900MHz) (f1=400~900MHz, f2=f1+100kHz, Pin=-8dBm) 900 34 20 32 15 OIP3, IIP3 (dBm) P-1dB(IN) (dBm) 600 frequency(MHz) P-1dB(IN) 10 IIP3 30 28 OIP3 26 5 24 0 400 500 600 700 frequency (MHz) 800 900 22 400 500 600 700 800 900 frequency (MHz) -9- NJG1139UA2 ! ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: Ta=+25°C, VCTL=0V, Zs=Zl=50 ohm, with application circuit Gain vs. VDD P-1dB(IN) vs. VDD (f=620MHz) (f=620MHz) 0 20 P-1dB(IN) (dBm) Gain (dB) -1 -2 -3 15 10 5 -4 -5 0 1 1.5 2 2.5 3 3.5 4 1 1.5 2 VDD (V) 4 3.5 4 (f=620MHz) 1.5 34 IIP3 1.4 30 VSWR OIP3, IIP3 (dBm) 3.5 VSWR vs. VDD (f=620MHz) OIP3 28 1.3 VSWRi 1.2 26 1.1 24 1 1.5 2 2.5 3 3.5 4 IDD vs. V DD (RF off) 25 20 15 10 5 0 1 1.5 2 2.5 VDD (V) 1 1.5 2 2.5 VDD (V) VDD (V) - 10 - VSWRo 1 22 IDD (uA) 3 VDD (V) OIP3, IIP3 vs. VDD 32 2.5 3 3.5 4 3 NJG1139UA2 ! ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VDD=1.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit Gain vs. Temperature P-1dB(IN) vs. Temperature (f=620MHz) (f=620MHz) 0.0 20 P-1dB(IN) (dBm) Gain (dB) -1.0 -2.0 -3.0 15 P-1dB(IN) 10 5 -4.0 -5.0 -40 -20 0 20 40 60 80 0 -40 100 -20 0 o 20 60 80 100 o Temperature ( C) Temperature ( C) OIP3, IIP3 vs. Temperature VSWR vs. Temperature (f1=620MHz, f2=f1+100kHz, Pin=-8dBm) (f=620MHz) 34 1.5 32 1.4 IIP3 VSWRin 30 VSWR OIP3, IIP3 (dBm) 40 OIP3 1.3 28 1.2 26 1.1 VSWRout 24 -40 -20 0 20 40 60 o Temperature ( C) 80 100 1 -40 -20 0 20 40 60 80 100 o Temperature ( C) - 11 - NJG1139UA2 ! ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VDD=1.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit IDD vs. Temperature K factor vs. Temperature (RF off) (f=50MHz~20GHz) 10 20 -40(oC) -20(oC) 0(oC) 8 25(oC) K factor IDD (uA) 15 6 60(oC) 85(oC) 95(oC) 10 4 5 2 0 -40 0 -20 0 20 40 60 80 100 o IDD vs. V CTL (RF off) 5 IDD (mA) 4 3 -40 (oC) o -20 ( C) 2 o 0 ( C) o 25 ( C) o 1 60 ( C) o 85 ( C) o 95 ( C) 0 0.5 1 VCTL (V) - 12 - 5 10 Frequency (GHz) Temperature ( C) 0 0 1.5 2 15 20 NJG1139UA2 ! ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: Ta=+25°C, VDD=1.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit S11, S22 S21, S12 VSWRi, VSWRo Zin, Zout S11, S22 (50MHz~20GHz) S21, S12 (50MHz~20GHz) - 13 - NJG1139UA2 ! APPLICATION CIRCUIT (Top View) RF IN L1 18nH 6 VCTL 5 RFIN VCTL 4 GND Logic circuit 1PIN INDEX 1 VDD GND 2 RFOUT RF OUT 3 L2 27nH C1 1000pF VDD ! TEST PCB LAYOUT (Top View) Parts List Parts ID L1, L2 C1 VCTL Notes MURATA LQP03T series MURATA GRM03 series RF OUT L1 RF IN 1PIN INDEX L2 C1 VDD * Please place all external parts around the IC as close as possible. - 14 - PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH =0.4mm (Z0=50 ohm) PCB SIZE=14.0mm×14.0mm NJG1139UA2 ! PACKAGE OUTLINE (EPFFP6-A2) Unit Substrate Terminal treat Molding material Weight (typ.) Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. : mm : FR4 : Au : Epoxy resin : 0.855mg [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - 15 -