NJG1151MD7 2-way Active Splitter GaAs MMIC I GENERAL DESCRIPTION The NJG1151MD7 is 2-way active splitter with normally loop through switch GaAs MMIC for terrestrial applications, and this IC can be tuned to satellite frequency from 1000MHz to 2150MHz. In order to simplify the tuner structure, the NJG1151MD7 does not only offer a 2-way active splitter, but also supply loop through switch for optimize the complicate circuit. The NJG1151MD7 achieve better characteristics and high ESD tolerance with less external components. A small and ultra-thin package of EQFN14-D7 is adopted. I PACKAGE OUTLINE NJG1151MD7 I APPLICATIONS STB, TV, Recorder applications Terrestrial application Satellite application Note: Please check the Application Note for Satellite. I FEATURES G Operating frequency 40 to 1000MHz G Package EQFN14-D7 (Package size: 1.6x1.6x0.397mm typ.) [ Active mode: Operating voltage 5.0V ] G Operating current 100mA typ. G Gain 6.0dB typ. (Zs=Zl=50 ohm, Zs=Zl=75 ohm) G Noise figure 2.5dB typ. (Zs=Zl=50 ohm) G CSO 60dBc typ. (Zs=Zl=75 ohm, 132ch, +15dBmV) G CTB 65dBc typ. (Zs=Zl=75 ohm, 132ch, +15dBmV) G Output to output isolation 20dB typ. (Zs=Zl=50 ohm, Zs=Zl=75 ohm) [ Through mode: Operating voltage 0V ] G Insertion loss 0.4dB typ. (Zs=Zl=50 ohm) I PIN CONFIGURATION (Top View) 1pin INDEX LNAIN GND 14 13 1 LNAOUT 12 11 GND GND 2 10 SPLI N SWOUT 1 3 4 GND 9 splitter splitter SWIN 1 SPLOUT1 5 6 7 SWOUT SWIN SPLOUT2 8 Pin Connection 1. GND 2. SWOUT1 3. SWIN1 4. GND 5. SWOUT2 6. SWIN2 7. SPLOUT2 Exposed Pad: 8. GND 9. SPLOUT1 10. SPIN1 11. GND 12. LNAOUT 13. GND 14. LNAIN GND GND Note: Specifications and description listed in this datasheet are subject to change without notice. Ver.2013-04-16 1 NJG1151MD7 I ABSOLUTE MAXIMUM RATINGS T a=+25°C, Zs=Zl=50 ohm / 75 ohm PARAMETER SYMBOL CONDITIONS RATINGS UNITS 6.0 V Drain voltage VDD Input power PIN VDD=5.0V +10 dBm Power dissipation PD 4-layer FR4 PCB with through-hole (76.2x114.3mm), Tj=150°C 1300 mW Operating temperature Topr -40~+85 °C Storage temperature Tstg -55~+150 °C I ELECTRICAL CHARACTERISTICS (DC CHARACTERISTICS) VDD=5.0V, T a=+25°C, with application circuit1 PARAMETERS SYMBOL Operating voltage VDD Operating current IDD 2 CONDITIONS RF OFF MIN TYP MAX UNITS 2.4 5.0 5.5 V - 100 140 mA NJG1151MD7 I ELECTRICAL CHARACTERISTICS2 (RF CHARACTERISTICS: Active mode, 50 ohm) VDD=5.0V, freq=40 to 1000MHz, T a=+25°C, ZS=Zl=50ohm, with application circuit1 PARAMETERS SYMBOL Small signal gain1_1 Gain1_1 Small signal gain1_2 Gain1_2 Gain Flatness1_1 Gflat1_1 Gain Flatness1_2 Gflat1_2 Noise figure1 NF1 Input power 1dB compression1 P-1dB(IN)1 Input 3rd order intercept point1 IIP3_1 2nd order intermodulation distortion1 IM2_1 3rd order intermodulation distortion1 IM3_1 Reverse Isolation1 Output to Output Isolation1 ISL1 OISL1 CONDITIONS MIN TYP MAX UNITS 4.0 6.0 8.0 dB 4.0 6.0 9.0 dB - 1.0 2.0 dB - 1.0 3.0 dB - 2.5 3.7 dB +1.0 +7.0 - dBm +10.0 +20.0 - dBm 37.0 52.0 - dB 49.0 60.0 - dB 20.0 28.0 - dB RF OUT1 to RF OUT2 18.0 20.0 - dB Exclude PCB & connector losses (Note1) freq=40 to 900MHz Exclude PCB & connector losses (Note1) freq=40 to 1000MHz Exclude PCB & connector losses (Note1) freq=40 to 900MHz Exclude PCB & connector losses (Note1) freq=40 to 1000MHz Exclude PCB & connector losses (Note2) f1=freq, f2=freq+100kHz, PIN=-12dBm f1=40.75MHz, f2=813.25MHz, fmeas=854MHz, PIN1=P IN2=-8dBm f1=893.25MHz, f2=873.25MHz, fmeas=853.25MHz, PIN1=P IN2=-8dBm RF OUT1 to RF IN RF OUT2 to RF IN RF IN Return loss1 RLi1 RF IN port 8.0 15.0 - dB RF OUT Return loss1 RLo1 RF OUT1, RF OUT2 port 13.0 20.0 - dB (Note1) Input and output PCB, connector losses (RFIN-RFOUT1): 0.02dB(40MHz), 0.16dB(1000MHz) Input and output PCB, connector losses (RFIN-RFOUT2): 0.02dB(40MHz), 0.15dB(1000MHz) (Note2) Input PCB and connector losses: 0.01dB(40MHz), 0.06dB(1000MHz) 3 NJG1151MD7 I ELECTRICAL CHARACTERISTICS3 (RF CHARACTERISTICS: Through mode, 50 ohm) VDD=0V, freq=40 to 1000MHz, T a=+25°C, ZS=Zl=50ohm, with application circuit1 PARAMETERS Insertion Loss2 Input power 1dB Compression2 2nd order intermodulation distortion2 3rd order intermodulation distortion2 SYMBOL CONDITIONS MIN TYP MAX UNITS Loss2 Exclude PCB & connector losses (Note1) - 0.4 2.0 dB +1.0 +10.0 - dBm 50.0 65.0 - dB 53.0 70.0 - dB P-1dB(IN)2 IM2_2 IM3_2 f1=90MHz, f2=100MHz, fmeas=190MHz, PIN1=P IN2=-5dBm f1=200MHz, f2=210MHz, fmeas=220MHz, PIN1=P IN2=-5dBm RF IN Return loss2 RLi2 RF IN port 8.0 15.0 - dB RF OUT Return loss2 RLo2 RF OUT2 port 8.0 15.0 - dB (Note1) Input and output PCB, connector losses (RFIN-RFOUT2): 0.02dB(40MHz), 0.15dB(1000MHz) 4 NJG1151MD7 I ELECTRICAL CHARACTERISTICS4 (RF CHARACTERISTICS: Active mode, 75 ohm) VDD=5.0V, freq=40 to 1000MHz, T a=+25°C, ZS=Zl=75 ohm, with application circuit1 PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Small signal gain3 (75 ohm) Gain3 Exclude PCB & connector losses - 6.0 - dB Composite Second Order3 CSO3 132channels, CW, PIN=+15dBmV - 60.0 - dBc Composite Triple Beat 3 CTB3 132channels, CW, PIN=+15dBmV - 65.0 - dBc Reverse Isolation3 ISL3 RF OUT1 to RF IN RF OUT2 to RF IN 28.0 dB RF OUT1 to RF OUT2 20.0 dB Output to Output Isolation3 OISL3 RF IN Return loss3 (75 ohm) RLi3 RF IN port - 15.0 - dB RF OUT Return loss3 (75 ohm) RLo3 RF OUT1, RF OUT2 port - 25.0 - dB I ELECTRICAL CHARACTERISTICS5 (RF CHARACTERISTICS: Through mode, 75 ohm) VDD=0V, freq=40 to 1000MHz, T a=+25°C, ZS=Zl=75 ohm, with application circuit1 PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Insertion Loss4 (75 ohm) Loss4 Exclude PCB & connector losses - 1.0 - dB Composite Second Order4 CSO4 132channels, CW, PIN=+15dBmV - 55.0 - dBc Composite Triple Beat4 CTB4 132channels, CW, PIN=+15dBmV - 60.0 - dBc RF IN Return loss4 (75 ohm) RLi4 RF IN port - 15.0 - dB RF OUT Return loss4 (75 ohm) RLo4 RF OUT1, RF OUT2 port - 15.0 - dB 5 NJG1151MD7 I TERMINAL DESCRIPTION Pin No. SYMBOL DESCRIPTION 1 GND Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. 2 3 SWIN1 4 GND 5 6 7 8 9 6 RF signal output terminal of the switch. SWOUT1 RF signal is output through the external circuit. Please connect the DC blocking capacitor of the application circuit. RF signal input terminal of the switch. RF signal is input through the external circuit. Please connect the DC blocking capacitor of the application circuit. Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. RF signal output terminal of the switch. SWOUT2 RF signal is output through the external circuit. Please connect the DC blocking capacitor of the application circuit. SWIN2 RF signal input terminal of the switch. RF signal is input through the external circuit. Please connect the DC blocking capacitor of the application circuit. SPLOUT2 RF signal output terminal of the splitter. GND Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. SPLOUT1 RF signal output terminal of the splitter. 10 SPLIN 11 GND 12 LNAOUT 13 GND 14 LNAIN Exposed Pad GND RF signal input terminal of the splitter. Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. RF signal output terminal of the LNA. RF signal is output through the external circuit. This terminal is also a voltage supply terminal of the switch and LNA, Please supply the voltage through an inductor of the application circuit. Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. RF signal input terminal of the LNA. RF signal is input through the external circuit. This terminal is also a current adjustment terminal of the LNA, Please connect to ground via a resistor of the application circuit. Ground terminal. NJG1151MD7 I ELECTRICAL CHARACTERISTICS (Active mode, 50 ohm) Conditions: VDD=5.0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit1 Gain, NF vs. frequency Gain, NF vs. frequency (freq=20~1500MHz, RF IN to RF OUT1) (freq=20~1500MHz, RF IN to RF OUT2) 7 8 6 6 6 6 4 5 4 5 2 4 2 4 3 0 7 Gain 3 0 NF NF 2 -2 2 -2 (Exclude PCB, Connector Losses) 0 500 (Exclude PCB, Connector Losses) 1 1500 -4 1000 0 500 Pout vs. Pin Pout vs. Pin (freq=620MHz, RF IN to RF OUT1) (freq=620MHz, RF IN to RF OUT2) 20 10 10 Pout (dBm) Pout (dBm) 1000 frequency (MHz) 20 0 -10 0 -10 Pout Pout -20 -20 P-1dB(IN)=+8.6dBm P-1dB(IN)=+8.4dBm -30 -20 -10 0 10 -30 -20 0 Gain, IDD vs. Pin (freq=620MHz, RF IN to RF OUT1) Gain, IDD vs. Pin (freq=620MHz, RF IN to RF OUT2) 160 8 140 6 120 IDD 2 100 0 80 Gain (dB) Gain 4 Gain 140 120 4 IDD 2 100 0 80 P-1dB(IN)=+8.6dBm 60 -30 -20 -10 Pin (dBm) 0 10 160 P-1dB(IN)=+8.4dBm -2 -40 -10 Pin (dBm) IDD (mA) Gain (dB) -30 -40 Pin (dBm) 8 6 1 1500 -4 frequency (MHz) -30 -40 NF (dB) Gain 8 IDD (mA) Gain (dB) 8 Gain (dB) 10 NF (dB) 8 10 10 -2 -40 60 -30 -20 -10 0 10 Pin (dBm) 7 NJG1151MD7 I ELECTRICAL CHARACTERISTICS (Active mode, 50 ohm) Conditions: VDD=5.0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit1 P-1dB(IN) vs. frequency (freq=40~1000MHz, RF IN to RF OUT2) 15 10 P-1dB(IN) (dBm) P-1dB(IN) (dBm) 15 P-1dB(IN) vs. frequency (freq=40~1000MHz, RF IN to RF OUT1) 5 0 -5 10 5 0 -5 0 200 400 600 800 1000 0 200 400 frequency (MHz) Pout, IM3 vs. Pin 1000 (f1=620MHz, f2=f1+100kHz, RF IN to RF OUT2) 40 OIP3=+26.1dBm OIP3=+26.0dBm 20 20 -20 IM3 -40 Pout Pout, IM3 (dBm) Pout 0 0 -20 IM3 -40 -60 -60 IIP3=+20.4dBm -80 -30 -20 -10 0 10 20 IIP3=+20.7dBm -80 -30 30 -20 Pin (dBm) -10 0 10 20 30 Pin (dBm) IIP3, OIP3 vs. frequency IIP3, OIP3 vs. frequency (f1=40~1000MHz, f2=f1+100kHz, Pin=-12dBm, RF IN to RF OUT1) 30 (f1=40~1000MHz, f2=f1+100kHz, Pin=-12dBm, RF IN to RF OUT2) 30 OIP3 20 OIP3 25 IIP3, OIP3 (dBm) IIP3, OIP3 (dBm) 25 IIP3 15 10 20 IIP3 15 10 5 5 0 200 400 600 frequency (MHz) 8 800 Pout, IM3 vs. Pin (f1=620MHz, f2=f1+100kHz, RF IN to RF OUT1) 40 Pout, IM3 (dBm) 600 frequency (MHz) 800 1000 0 200 400 600 frequency (MHz) 800 1000 NJG1151MD7 I ELECTRICAL CHARACTERISTICS (Active mode, 50 ohm) Conditions: VDD=5.0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit1 RF OUT Return Loss vs. frequency RF IN Return Loss vs. frequency (freq=20~1500MHz) (freq=20~1500MHz) 0 5 5 10 10 15 15 RLo (dB) RLi (dB) 0 20 25 RF OUT2 20 25 RF OUT1 30 30 35 35 40 40 0 1000 1500 0 Output to Output Isolation vs. frequency (freq=20~1500MHz) 0 10 OISL (dB) 10 15 20 RF OUT1 to RF IN 30 15 RF OUT1 to RF OUT2 20 25 30 RF OUT2 to RF OUT1 35 RF OUT2 to RF IN 40 40 0 500 1000 1500 0 1000 1500 frequency (MHz) Reverse Isolation vs. frequency Output to Output Isolation vs. frequency (freq=20~1500MHz) 0 5 5 10 10 OISL (dB) 15 20 25 500 frequency (MHz) (freq=20~1500MHz) 0 ISL (dB) 1500 Reverse Isolation vs. frequency 5 35 1000 frequency (MHz) 5 25 500 frequency (MHz) (freq=20~1500MHz) 0 ISL (dB) 500 RF OUT1 to RF IN 15 RF OUT1 to RF OUT2 20 25 30 30 35 35 RF OUT2 to RF IN 40 RF OUT2 to RF OUT1 40 0 500 1000 frequency (MHz) 1500 0 500 1000 1500 frequency (MHz) 9 NJG1151MD7 I ELECTRICAL CHARACTERISTICS (Active mode, 50 ohm) Conditions: VDD=5.0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit1 10 S11, S22 (RF OUT1) S11, S22 (RF OUT2) S21, S12 (RF OUT1) S21, S12 (RF OUT2) Zin, Zout (RF OUT1) Zin, Zout (RF OUT2) NJG1151MD7 I ELECTRICAL CHARACTERISTICS (Active mode, 50 ohm) Conditions: VDD=5.0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit1 VSWRi, VSWRo (RF OUT1) VSWRi, VSWRo (RF OUT2) S11, S22 (50MHz~20GHz, RF OUT1) S11, S22 (50MHz~20GHz, RF OUT2) S21, S12 (50MHz~20GHz, RF OUT1) S21, S12 (50MHz~20GHz, RF OUT2) 11 NJG1151MD7 I ELECTRICAL CHARACTERISTICS (Active mode, 50 ohm) Conditions: Ta=25°C, Zs=Zl=50 ohm, with application circuit1 NF vs. VDD Gain vs. VDD (freq=620MHz) 10 (freq=620MHz) 6 8 5 RF IN to RF OUT1 RF IN to RF OUT2 4 NF (dB) Gain (dB) 6 2 4 3 RF IN to RF OUT1 0 2 RF IN to RF OUT2 -2 (Exclude PCB, connector Losses) -4 2.0 2.5 3.0 4.5 5.0 5.5 6.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VDD (V) P-1dB(IN) vs. VDD IIP3 vs. VDD (f1=620MHz, f2=620.1MHz, Pin=-12dBm) (freq=620MHz) 30 RF IN to RF OUT2 6.0 25 6 RF IN to RF OUT1 RF IN to RF OUT1 IIP3 (dBm) P-1dB(IN) (dBm) 4.0 VDD (V) 10 8 3.5 (Exclude PCB, connector Losses) 1 2.0 4 2 20 RF IN to RF OUT2 15 0 10 -2 -4 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5 2.0 6.0 2.5 3.0 3.5 VDD (V) 4.0 IM2 vs. VDD (f1=40.75MHz, f2=813.25MHz, fmeas=854MHz, Pin=-8dBm) 60 5.0 5.5 6.0 IM3 vs. VDD (f1=893.25MHz, f2=873.25MHz, fmeas=853.25MHz, Pin=-8dBm) 70 RF IN to RF OUT2 55 4.5 VDD (V) RF IN to RF OUT2 60 RF IN to RF OUT1 45 RF IN to RF OUT1 IM3 (dB) IM2 (dB) 50 40 35 50 40 30 30 25 20 2.0 2.5 3.0 3.5 4.0 VDD (V) 12 4.5 5.0 5.5 6.0 20 2.0 2.5 3.0 3.5 4.0 VDD (V) 4.5 5.0 5.5 6.0 NJG1151MD7 I ELECTRICAL CHARACTERISTICS (Active mode, 50 ohm) Conditions: Ta=25°C, Zs=Zl=50 ohm, with application circuit1 RF IN Return Loss vs. VDD RF OUT Return Loss vs. VDD (freq=620MHz) 0 10 RLo (dB) RLi (dB) 10 20 30 40 50 2.0 20 RF OUT1 RF OUT2 30 40 2.5 3.0 3.5 4.0 4.5 5.0 5.5 50 2.0 6.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VDD (V) VDD (V) Reverse Isolation vs. VDD Output to Output Isolation vs. VDD (freq=620MHz) 0 6.0 (freq=620MHz) 0 10 OISL (dB) 10 ISL (dB) (freq=620MHz) 0 20 RF OUT1 to RF IN 30 RF OUT1 to RF OUT2 20 30 RF OUT2 to RF OUT1 RF OUT2 to RF IN 40 40 50 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 50 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VDD (V) VDD (V) IDD vs. VDD (RF OFF) 200 IDD (mA) 150 100 50 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VDD (V) 13 NJG1151MD7 I ELECTRICAL CHARACTERISTICS (Active mode, 50 ohm) Conditions: Ta=25°C, Zs=Zl=50 ohm, with application circuit1 K factor vs. frequency K factor vs. frequency 20 (freq=50MHz~20GHz, RF IN to RF OUT1) 20 15 K factor 15 K factor (freq=50MHz~20GHz, RF IN to RF OUT2) 10 10 VDD=2.5V VDD=2.5V 5 5 VDD=5.0V VDD=5.0V VDD=6.0V VDD=6.0V 0 0.0 5.0 10 frequency (GHz) 14 15 20 0 0.0 5.0 10 frequency (GHz) 15 20 NJG1151MD7 I ELECTRICAL CHARACTERISTICS (Active mode, 50 ohm) Conditions: VDD=5.0V, Zs=Zl=50 ohm, with application circuit1 Gain vs. Temperature NF vs. Temperature (freq=620MHz) 10 (freq=620MHz) 6 8 5 RF IN to RF OUT1 RF IN to RF OUT2 4 NF (dB) Gain (dB) 6 2 4 RF IN to RF OUT2 3 RF IN to RF OUT1 0 2 -2 (Exclude PCB, connector Losses) -4 -40 -20 0 20 40 60 80 (Exclude PCB, connector Losses) 1 -40 100 -20 0 Temperature ( oC) 20 40 60 80 P-1dB(IN) vs. Temperature IIP3 vs. Temperature (freq=620MHz) (f1=620MHz, f2=620.1MHz, Pin=-12dBm) 10 100 Temperature ( oC) 30 RF IN to RF OUT2 25 RF IN to RF OUT1 RF IN to RF OUT2 IIP3 (dBm) P-1dB(IN) (dBm) 8 6 4 2 0 -40 20 RF IN to RF OUT1 15 10 -20 0 20 40 60 80 5 -40 100 -20 0 Temperature ( oC) 20 IM2 vs. Temperature 60 80 100 IM3 vs. Temperature (f1=40.75MHz, f2=813.25MHz, fmeas=854MHz, Pin=-8dBm) 60 (f1=893.25MHz, f2=873.25MHz, fmeas=853.25MHz, Pin=-8dBm) 70 55 65 RF IN to RF OUT1 50 RF IN to RF OUT2 60 RF IN to RF OUT2 RF IN to RF OUT1 45 IM3 (dB) IM2 (dB) 40 Temperature ( oC) 40 35 55 50 45 30 40 25 35 20 -40 -20 0 20 40 60 o Temperature ( C) 80 100 30 -40 -20 0 20 40 60 80 100 Temperature ( oC) 15 NJG1151MD7 I ELECTRICAL CHARACTERISTICS (Active mode, 50 ohm) Conditions: VDD=5.0V, Zs=Zl=50 ohm, with application circuit1 RF OUT Return Loss vs. Temperature RF IN Return Loss vs. Temperature (freq=620MHz) 0 10 RLo (dB) 10 RLi (dB) (freq=620MHz) 0 20 30 20 RF OUT2 30 RF OUT1 40 50 -40 40 -20 0 20 40 60 80 50 -40 100 0 20 40 60 80 100 Temperature ( oC) Reverse Isolation vs. Temperature Output to Output Isolation vs. Temperature (freq=620MHz) 0 (freq=620MHz) 0 10 10 OISL (dB) ISL (dB) -20 Temperature ( oC) 20 RF OUT1 to RF IN 30 RF OUT1 to RF OUT2 20 30 RF OUT2 to RF OUT1 RF OUT2 to RF IN 40 50 -40 40 -20 0 20 40 60 80 100 Temperature ( oC) (RF OFF) IDD (mA) 150 100 50 0 -40 -20 0 20 40 60 Temperature ( oC) 16 -20 0 20 40 60 Temperature ( oC) IDD vs. Temperature 200 50 -40 80 100 80 100 NJG1151MD7 I ELECTRICAL CHARACTERISTICS (Active mode, 50 ohm) Conditions: VDD=5.0V, Zs=Zl=50 ohm, with application circuit1 20 K factor vs. frequency K factor vs. frequency (freq=50MHz~20GHz, RF IN to RF OUT1) (freq=50MHz~20GHz, RF IN to RF OUT2) 20 15 K factor K factor 15 10 o -40 C 5 10 o -40 C 5 o o +25 C +25 C o o +85 C +85 C 0 0.0 5.0 10 frequency (GHz) 15 20 0 0.0 5.0 10 15 20 frequency (GHz) 17 NJG1151MD7 I ELECTRICAL CHARACTERISTICS (Through mode, 50 ohm) Conditions: VDD=0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit1 0 Insertion Loss vs. frequency Pout vs. Pin (freq=20~1500MHz,RF IN to RF OUT2) (freq=620MHz, RF IN to RF OUT2) 20 10 Pout (dBm) Loss (dB) 1 2 3 4 0 -10 Pout -20 (Exclude PCB, connector Losses) 5 0 500 1000 1500 P-1dB(IN)=+10.0dBm -30 -30 -20 -10 0 10 20 Pin (dBm) frequency (MHz) Loss vs. Pin P-1dB(IN) vs. frequency (freq=620MHz, RF IN to RF OUT2) (freq=40~1000MHz, RF IN to RF OUT2) 20 0 Loss P-1dB(IN) (dBm) Loss (dB) 2 4 6 15 10 5 8 P-1dB(IN)=+10.0dBm 10 -30 0 -20 -10 0 10 0 20 RF IN Return Loss vs. frequency 5 5 10 10 15 15 RLo (dB) RLi (dB) 600 800 1000 (freq=20~1500MHz) 0 20 25 20 25 30 30 35 35 40 40 0 500 1000 frequency (MHz) 18 400 RF OUT2 Return Loss vs. frequency (freq=20~1500MHz) 0 200 frequency (MHz) Pin (dBm) 1500 0 500 1000 frequency (MHz) 1500 NJG1151MD7 I ELECTRICAL CHARACTERISTICS (Through mode, 50 ohm) Conditions: VDD=0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit1 S11, S22 S21, S12 Zin, Zout VSWRi, VSWRo S11, S22 (50MHz~20GHz) S21, S21 (50MHz~20GHz) 19 NJG1151MD7 I ELECTRICAL CHARACTERISTICS (Through mode, 50 ohm) Conditions: VDD=0V, Zs=Zl=50 ohm, with application circuit1 P-1dB(IN) vs. Temperature Insertion Loss vs. Temperature (freq=620MHz) 0 P-1dB(IN) (dBm) 1 Loss (dB) (freq=620MHz) 20 2 3 15 10 5 4 5 -40 -20 0 20 40 60 80 0 -40 100 -20 0 Temperature ( C) 80 20 40 60 80 100 Temperature ( oC) o IM2 vs. Temperature IM3 vs. Temperature (f1=90MHz, f2=100MHz, fmeas=190MHz, Pin=-5dBm) (f1=200MHz, f2=210MHz, fmeas=220MHz, Pin=-5dBm) 100 75 90 70 IM3 (dB) IM2 (dB) 80 65 60 55 70 60 50 50 45 40 -40 -20 0 20 40 60 80 40 -40 100 40 60 80 100 RF OUT Return Loss vs. Temperature (freq=620MHz) (freq=620MHz) 0 10 RLo (dB) RLi (dB) 20 RF IN Return Loss vs. Temperature 10 20 30 40 20 30 40 -20 0 20 40 60 Temperature ( oC) 20 0 Temperature ( oC) 0 50 -40 -20 Temperature ( oC) 80 100 50 -40 -20 0 20 40 60 Temperature ( oC) 80 100 NJG1151MD7 I ELECTRICAL CHARACTERISTICS (Active mode, 75 ohm) Conditions: VDD=5.0V, Ta=25°C, Zs=Zl=75 ohm, with application circuit1 Gain vs. frequency (freq=20~1500MHz, RF IN to RF OUT2, Zs=Zl=75ohm) 10 8 8 6 6 Gain (dB) Gain (dB) 10 Gain vs. frequency (freq=20~1500MHz, RF IN to RF OUT1, Zs=Zl=75ohm) 4 2 4 2 0 0 -2 -2 (Exclude PCB, connector Losses) (Exclude PCB, connector Losses) -4 -4 0 500 1000 0 1500 1000 1500 frequency (MHz) RF IN Return Loss vs. frequency RF OUT Return Loss vs. frequency (freq=20~1500MHz, Zs=Zl=75ohm) 0 500 frequency (MHz) (freq=20~1500MHz, Zs=Zl=75ohm) 0 5 5 10 10 15 15 RLo (dB) RLi (dB) RF OUT1 20 25 RF OUT2 25 30 30 35 35 40 40 0 500 1000 0 1500 1000 1500 frequency (MHz) Reverse Isolation vs. frequency Output to Output Isolation vs. frequency (freq=20~1500MHz, Zs=Zl=75ohm) 0 5 10 10 OISL (dB) 5 15 20 25 500 frequency (MHz) (freq=20~1500MHz, Zs=Zl=75ohm) 0 ISL (dB) 20 RF OUT1 to RF IN 15 RF OUT1 to RF OUT2 20 25 30 30 35 35 RF OUT2 to RF IN 40 RF OUT2 to RF OUT1 40 0 500 1000 frequency (MHz) 1500 0 500 1000 1500 frequency (MHz) 21 NJG1151MD7 I ELECTRICAL CHARACTERISTICS (Active mode, 75 ohm) Conditions: Ta=25°C, Zs=Zl=75 ohm, with application circuit1 Gain vs. VDD (freq=620MHz, Zs=Zl=75ohm) 10 8 RF IN to RF OUT1 Gain (dB) 6 4 RF IN to RF OUT2 2 0 -2 (Exclude PCB, connector Losses) -4 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VDD (V) RF IN Return Loss vs. VDD RF OUT Return Loss vs. VDD (freq=620MHz, Zs=Zl=75ohm) 0 (freq=620MHz, Zs=Zl=75ohm) 0 10 10 RLo (dB) RLi (dB) RF OUT2 20 30 2.5 3.0 3.5 4.0 4.5 5.0 5.5 30 50 2.0 6.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VDD (V) VDD (V) Reverse Isolation vs. VDD Output to Output Isolation vs. VDD (freq=620MHz, Zs=Zl=75ohm) 0 6.0 (freq=620MHz, Zs=Zl=75ohm) 0 10 OISL (dB) 10 ISL (dB) RF OUT1 40 40 50 2.0 20 20 RF OUT1 to RF IN 30 RF OUT1 to RF OUT2 20 30 RF OUT2 to RF OUT1 RF OUT2 to RF IN 40 50 2.0 40 2.5 3.0 3.5 4.0 VDD (V) 22 4.5 5.0 5.5 6.0 50 2.0 2.5 3.0 3.5 4.0 VDD (V) 4.5 5.0 5.5 6.0 NJG1151MD7 I ELECTRICAL CHARACTERISTICS (Active mode, 75 ohm) Conditions: VDD=5.0V, Zs=Zl=75 ohm, with application circuit1 Gain vs. Temperature (freq=620MHz, Zs=Zl=75ohm) 10 8 RF IN to RF OUT1 Gain (dB) 6 4 RF IN to RF OUT2 2 0 -2 (Exclude PCB, connector Losses) -4 -40 -20 0 20 40 60 80 100 Temperature ( oC) RF OUT Return Loss vs. Temperature RF IN Return Loss vs. Temperature (freq=620MHz, Zs=Zl=75ohm) 0 10 RLo (dB) RLi (dB) 10 20 30 -20 RF OUT1 30 0 20 40 60 80 50 -40 100 -20 0 20 40 60 80 100 Temperature ( oC) Temperature ( oC) Reverse Isolation vs. Temperature Output to Output Isolation vs. Temperature (freq=620MHz, Zs=Zl=75ohm) 0 (freq=620MHz, Zs=Zl=75ohm) 0 10 OISL (dB) 10 ISL (dB) 20 RF OUT2 40 40 50 -40 (freq=620MHz, Zs=Zl=75ohm) 0 20 RF OUT1 to RF IN 30 RF OUT1 to RF OUT2 20 30 RF OUT2 to RF OUT1 RF OUT2 to RF IN 40 40 50 -40 -20 0 20 40 60 Temperature ( oC) 80 100 50 -40 -20 0 20 40 60 80 100 Temperature ( oC) 23 NJG1151MD7 I ELECTRICAL CHARACTERISTICS (Through mode, 75 ohm) Conditions: VDD=0V, Ta=25°C, Zs=Zl=75 ohm, with application circuit1 Insertion Loss vs. frequency RF IN Return Loss vs. frequency (freq=20~1500MHz,RF IN to RF OUT2, Zs=Zl=75ohm) 0 (freq=20~1500MHz, Zs=Zl=75ohm) 0 5 1 RLi (dB) Loss (dB) 10 2 3 15 20 25 30 4 35 (Exclude PCB, connector Losses) 5 40 0 500 1000 1500 0 500 1000 1500 frequency (MHz) frequency (MHz) RF OUT2 Return Loss vs. frequency Insertion Loss vs. Temperature (freq=20~1500MHz, Zs=Zl=75ohm) 0 (freq=620MHz, Zs=Zl=75ohm) 0 5 1 Loss (dB) RLo (dB) 10 15 20 25 2 3 30 4 35 40 0 500 1000 5 -40 1500 -20 0 RF IN Return Loss vs. Temperature RLo (dB) RLi (dB) 80 100 10 20 30 40 20 30 40 -20 0 20 40 60 Temperature ( oC) 24 60 (freq=620MHz, Zs=Zl=75ohm) 0 10 50 -40 40 RF OUT Return Loss vs. Temperature (freq=620MHz, Zs=Zl=75ohm) 0 20 Temperature ( oC) frequency (MHz) 80 100 50 -40 -20 0 20 40 60 Temperature ( oC) 80 100 NJG1151MD7 I APPLICATION CIRCUIT1: with through SW V DD (Top View) L2 10n C2 0.01u C8 1.5p L4 27n R1 470 R4 56k 14 LNAIN L1 470n R3 1k C3 0.01u 1 1Pin INDEX C5 0.01u C4 0.01u L3 2.2n 13 12 GND LNAOUT GND 2 10 SW OUT1 RF IN SPLIN 3 C1 0.01u RF OUT1 9 splitter SW IN1 SPLOUT1 4 GND 11 GND 8 5 SW OUT2 C7 0.01u 6 7 SW IN2 SPLOUT2 GND C6 0.01u RF OUT2 Parts List Parts ID Manufacture L1 TAIYO-YUDEN HK1608 Series L2~L4 TAIYO-YUDEN HK1005 Series C1~C8 MURATA GRM15 Series R1, R3, R4 KOA RK73 Series I FUNCTION STATE TABLE1 Application circuit1: with through SW VDD LNA Loop through SW 0V OFF ON 5.0V ON OFF RF IN to RF OUT1 RF IN to RF OUT2 Isolate mode (-28dB) Active mode (6dB) Through mode (-0.4dB) Active mode (5.6dB) 25 NJG1151MD7 I TEST PCB LAYOUT (Top View) RF OUT1 VDD C3 R1 R4 C8 RF IN L2 C5 R3 L1 L4 L3 C4 C2 C1 C7 C6 1Pin INDEX PCB: FR-4, t=0.2mm Microstrip line width: 0.4mm PCB size: 16.7mm x 19.1mm RF OUT2 PRECAUTIONS - C1~C4, C6 and C7 are DC-Blocking capacitors, and C5 is a bypass capacitor. - L1 is RF choke inductor. (DC feed inductor) - R4 is the resistance to adjust the operating current. - L2~L4, R1, R3 and C8 are negative feedback circuit and impedance matching. - All external parts, please be placed as close to the IC. - The backside exposed pad, because it is used to heat dissipation, please grounded via a through-hole near the IC. 26 NJG1151MD7 I RECOMMENDED FOOTPRINT PATTERN (EQFN14-D7 PACKAGE Reference) : Land : Mask (Open area) *Metal mask thickness: 100um PKG: 1.6mm x 1.6mm Pin pitch: 0.4mm : Resist (Open area) Detail A 27 NJG1151MD7 I APPLICATION CIRCUIT2: without through SW V DD (Top View) C8 1.5p L3 2.2n 14 1 1Pin INDEX C4 0.01u L4 27n R1 470 R4 56k L1 470n R3 1k C3 0.01u L2 10n C2 0.01u C5 0.01u LNAIN 13 12 GND LNAOUT GND 2 10 SW OUT1 RF IN SPLIN 3 C1 0.01u SPLOUT1 4 8 5 SW OUT2 Don’t connect (open) RF OUT1 9 splitter SW IN1 GND 11 GND 6 7 SW IN2 SPLOUT2 GND RF OUT2 Parts List Parts ID Manufacture L1 TAIYO-YUDEN HK1608 Series L2~L4 TAIYO-YUDEN HK1005 Series C1~C5, C8 MURATA GRM15 Series R1, R3, R4 KOA RK73 Series I FUNCTION STATE TABLE2 Application circuit2: without through SW 28 VDD LNA 0V OFF 5.0V ON RF IN to RF OUT1 RF IN to RF OUT2 Isolate mode (-28dB) Active mode (6dB) Isolate mode (-28dB) Active mode (6dB) NJG1151MD7 I MEASUREMENT BLOCK DIAGRAM Measuring instruments NF Analyzer : Agilent 8973A Noise Source : Agilent 346A Setting the NF analyzer Measurement mode form Device under test : Amplifier System downconverter : off Mode setup form Sideband : LSB Averages :4 Average mode : Point Bandwidth : 4MHz Loss comp : off Tcold : setting the temperature of noise source (303K) NF Analyzer (Agilent 8973A) Noise Source (Agilent 346A) Preamplifier NJG1145UA2 Gain=15dB, NF=1.5dB Input (50 ohm) Noise Source Drive Output * Noise sauce, the preamplifier, and NF analyzer are connected directly. Calibration Setup NF Analyzer (Agilent 8973A) Preamplifier NJG1145UA2 Gain=15dB, NF=1.5dB Noise Source (Agilent 346A) * Noise sauce, DUT, IN DUT OUT Input (50 ohm) Noise Source Drive Output the preamplifier, and NF analyzer are connected directly. Measurement Setup 29 NJG1151MD7 I PACKAGE OUTLINE (EQFN14-D7) Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. 30 [CAUTION] The specifications on this databook are only given for information, without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.