NJG1129MD7 UHF BAND LOW NOISE AMPLIFIER GaAs MMIC ! GENERAL DESCRIPTION The NJG1129MD7 is a low noise amplifier GaAs MMIC designed for mobile digital TV application (470~770 MHz). This IC has a LNA pass-through function to select high gain mode or low gain mode by single bit control. Also, the ESD protection circuit is integrated into the IC to achieve high ESD tolerance. ! PACKAGE OUTLINE NJG1129MD7 ! FEATURES " Low voltage operation " Low voltage control " Package +2.8V typ. +1.85V typ. EQFN14-D7 (Package size: 1.6mm x 1.6mm x 0.397mm typ.) [High gain mode] " Low current consumption " High gain " Low noise figure " High input IP3 5.0mA typ. 15.0dB typ. 1.4dB typ. +1.0dBm typ. [Low gain mode] " Low current consumption " Gain " High input IP3 16µA typ. -4.0dB typ. +20.0dBm typ. ! PIN CONFIGURATION (Top View) 11 10 9 8 Bypass circuit 12 7 LNA circuit 13 6 Bias circuit Logic circuit 14 1 2 5 3 Pin Connection 1. GND 2. GND 3. VINV 4. GND 5. GND 6. GND 7. RFOUT * Exposed PAD: GND 8. GND 9. GND 10. GND 11. GND 12. RFIN 13. GND 14. VCTL 4 ! TRUTH TABLE “H”=VCTL(H), “L”=VCTL(L) VCTL LNA Mode H High Gain mode L Low Gain mode Note: Specifications and description listed in this datasheet are subject to change without notice. Ver.2008-08-01 -1- NJG1129MD7 ! ABSOLUTE MAXIMUM RATINGS Ta=+25°C, Zs=Zl=50 ohm PARAMETER SYMBOL CONDITIONS RATINGS UNITS Drain voltage VDD 5.0 V Inverter voltage VINV 5.0 V Control voltage VCTL 5.0 V Input power Pin VDD=VINV=2.8V +15 dBm Power dissipation PD 4-layer FR4 PCB with through-hole (74.2x74.2mm), Tj=150°C 1300 mW Operating temperature Topr -40~+85 °C Storage temperature Tstg -55~+150 °C ! ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS) General conditions: VDD=VINV=2.8V, Ta=+25°C, Zs=Zl=50 ohm, with application circuit PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating voltage VDD 2.3 2.8 3.6 V Inverter voltage VINV 2.3 2.8 3.6 V Control voltage (High) VCTL(H) 1.5 1.85 3.6 V Control voltage (Low) VCTL(L) 0 0 0.3 V Operating current1 IDD1 RF OFF, VCTL=1.85V - 5.0 8.0 mA Operating current2 IDD2 RF OFF, VCTL=0V - 1 5 µA Inverter current1 IINV1 RF OFF, VCTL=1.85V - 90 180 µA Inverter current2 IINV2 RF OFF, VCTL=0V - 15 40 µA Control current ICTL RF OFF, VCTL=1.85V - 5 10 µA -2- NJG1129MD7 ! ELECTRICAL CHARACTERISTICS2 (High Gain mode) General conditions: VDD=VINV=2.8V, VCTL=1.85V, Ta=+25°C, Zs=Zl=50 ohm, with application circuit PARAMETERS Operating frequency Small signal gain1 Noise figure Input power at 1dB gain compression point1 SYMBOL MIN TYP MAX UNITS fRF 470 620 770 MHz Gain1 11.0 15.0 19.0 dB - 1.4 1.9 dB -14.0 -6.0 - dBm -6.0 +1.0 - dBm NF CONDITIONS Exclude PCB & connector losses*1 P-1dB(IN)1 Input 3rd order intercept point1 IIP3_1 f1=fRF, f2=fRF+100kHz, PIN=-25dBm RF IN VSWR1 VSWRi1 - 1.5 4.5 - RF OUT VSWR1 VSWRo1 - 1.5 2.8 - ! ELECTRICAL CHARACTERISTICS3 (Low Gain mode) General conditions: VDD=VINV=2.8V, VCTL=0V, Ta=+25°C, Zs =Zl=50 ohm, with application circuit. PARAMETERS Operating frequency Small signal gain2 Input power at 1dB gain compression point2 SYMBOL CONDITIONS fRF Gain2 Exclude PCB & connector losses*2 P-1dB(IN)2 f1=fRF, f2=fRF+100kHz, PIN=-12dBm MIN TYP MAX UNITS 470 620 770 MHz -6.0 -4.0 - dB +5.0 +12.0 - dBm +14.0 +20.0 - dBm Input 3rd order intercept point2 IIP3_2 RF IN VSWR2 VSWRi2 - 1.5 3.0 - RF OUT VSWR2 VSWRo2 - 1.5 2.8 - *1 Input PCB and connector losses: 0.036dB(at 470MHz), 0.053dB(at 770MHz) *2 Input & output PCB and connector losses: 0.072dB(at 470MHz), 0.105dB(at 770MHz) -3- NJG1129MD7 ! TERMINAL INFORMATION No. SYMBOL DESCRIPTION 1, 2, 4, 5, 6, 8, 9, 10, 11, 13 GND Ground terminal. These terminals should be connected to the ground plane as close as possible for excellent RF performance. 3 VINV Inverter voltage supply terminal. RFOUT RF Output terminal. RF signal comes out from this terminal, and goes through an external matching circuit connected to this. Inductor L4 as shown in the application circuit is a part of an external matching circuit, and also provide DC power to LNA. 12 RFIN RF input terminal. The RF signal is input through external matching circuit connected to this terminal. Since this IC is integrated an input DC blocking capacitor. 14 VCTL Control voltage supply terminal. 7 -4- NJG1129MD7 ! ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: Ta=+25°C, VDD= VINV=2.8V, VCTL=1.85V, Zs=Zl=50 ohm, with application circuit Pout vs. Pin Gain, IDD vs. Pin (f=620MHz) (f=620MHz) 15 20 10 10 Gain 5 15 8 -5 -10 Pout 10 IDD (mA) Gain (dB) Pout (dBm) 0 6 IDD -15 5 -20 4 -25 P-1dB(IN)=-6.0dBm P-1dB(IN)=-6.0dBm -30 -40 0 -35 -30 -25 -20 -15 -10 -5 0 2 -40 -35 -30 -25 Pin (dBm) -15 -10 -5 0 Pin (dBm) Pout, IM3 vs. Pin Gain, NF vs. Frequency (f1=620MHz, f2=620.1MHz) 20 19 18 0 Pout 4 3.5 Gain 17 3 16 2.5 15 2 14 1.5 -40 -60 NF 13 IM3 NF (dB) -20 Gain (dB) Pout, IM3 (dBm) -20 1 -80 12 IIP3=+4.5dBm -100 -40 -30 -20 -10 0 0.5 (Exclude PCB, Connector Losses) 11 400 10 450 500 550 600 650 700 750 0 800 Frequency (MHz) Pin (dBm) IIP3, OIP3 vs. Frequency P-1dB(IN) vs. Frequency (f1=frequency, f2=f1+100kHz, Pin=-25dBm) 0 25 20 OIP3 P-1dB(IN) IIP3, OIP3 (dBm) P-1dB(IN) (dBm) -5 -10 15 10 5 IIP3 -15 0 -20 400 450 500 550 600 650 Frequency (MHz) 700 750 800 -5 400 450 500 550 600 650 700 750 800 Frequency (MHz) -5- NJG1129MD7 ! ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: Ta=+25°C, VDD= VINV=2.8V, VCTL=1.85V, Zs=Zl=50 ohm, with application circuit Gain, NF vs. VDD=VINV K-factor vs. Frequency (f=620MHz) 20 4 20 3.5 Gain 3 15 10 2.5 2 10 1.5 5 5 1 NF 0.5 0 0 0 0 5000 10000 15000 20000 0 1 2 3 4 5 VDD (V) Frequency (MHz) P-1dB(IN) vs. VDD=VINV IIP3, OIP3 vs. VDD=VINV (f=620MHz) (f1=620MHz, f2=620.1MHz, Pin=-25dBm) 5 25 20 -5 IIP3, OIP3 (dBm) P-1dB(IN) (dBm) 0 P-1dB(IN) 15 OIP3 10 5 -10 IIP3 0 -5 -15 0 1 2 3 4 0 5 1 2 VDD (V) 3 4 5 4 5 VDD (V) VSWR vs. VDD=VINV IDD vs. VDD=VINV 15 8 VSWRi(max.), VSWRo(max) 7 IDD (mA) 10 5 IDD 6 VSWRi(max.) 5 4 3 2 VSWRo(max.) 1 0 0 0 1 2 3 VDD (V) -6- 4 5 0 1 2 3 VDD (V) NF (dB) Gain (dB) K-factor 15 NJG1129MD7 ! ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: Ta=+25°C, VDD=2.8V, Zs=Zl=50 ohm, with application circuit IDD vs. VCTL 6 5 IDD (mA) 4 3 2 1 0 0 0.5 1 1.5 2 VCTL (V) -7- NJG1129MD7 ! ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VDD= VINV=2.8V, VCTL=1.85V, Zs=Zl=50 ohm, with application circuit P-1dB(IN) vs. Temp. Gain, NF vs. Temp. (fRF=620MHz) (fRF=620MHz) 0 4 20 Gain 3.5 -2 2 10 NF (dB) Gain (dB) 2.5 1.5 NF P-1dB(IN) (dBm) 3 15 -4 P-1dB(IN) -6 1 5 -8 0.5 0 -50 0 50 o Temperature ( C) 0 100 -10 -50 0 50 o Temperature ( C) 100 IDD vs. Temp. IIP3, OIP3 vs. Temp. (RF OFF) (f1=620MHz, f2=620.1MHz, Pin=-25dBm) 7 25 6 20 5 IDD 15 IDD (mA) IIP3, OIP3 (dBm) OIP3 10 4 3 2 5 IIP3 1 0 -50 0 50 0 -50 100 0 o IDD vs. VCTL (fRF=470~770MHz) 6 8 7 5 6 4 5 4 IDD (mA) VSWRi(max.), VSWRo(max.) 100 Temperature ( C) VSWR vs. Temp. VSWRi(max.) 3 o 3 85 C o -25 C o 50 C 2 o -40 C o 25 C VSWRo(max.) 0 -50 o 0C o 75 C 2 1 1 0 0 50 o Temperature ( C) -8- 50 o Temperature ( C) 100 0 0.5 1 VCTL (V) 1.5 2 NJG1129MD7 ! ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: Ta=+25°C, VDD= VINV=2.8V, VCTL=1.85V, Zs=Zl=50 ohm, with application circuit S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (50MHz~20GHz) S21, S12 (50MHz~20GHz) -9- NJG1129MD7 ! ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: Ta=+25°C, VDD= VINV=2.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit Pout vs. Pin Gain, IDD vs. Pin (f=620MHz) (f=620MHz) 10 0 1 5 -2 Gain (dB) -15 -20 -4 0.6 -6 0.4 Pout -25 -8 -30 -35 IDD P-1dB(IN)=+13.3dBm -30 -20 -10 0 10 -10 -40 20 0 -30 -20 -10 Pin (dBm) Pout, IM3 vs. Pin 10 0 0 10 -2 8 Gain Gain (dB) Pout -40 -4 6 -6 4 -60 NF IM3 -8 -80 2 IIP3=+24.8dBm -100 -40 20 Gain, NF vs. Frequency 20 Pout, IM3 (dBm) 0 Pin (dBm) (f1=620MHz, f2=620.1MHz) -20 0.2 P-1dB(IN)=+13.3dBm -30 -20 -10 0 10 20 (Exclude PCB, Connector Losses) -10 400 30 450 500 550 600 650 700 750 0 800 Frequency (MHz) Pin (dBm) IIP3, OIP3 vs. Frequency P-1dB(IN) vs. Frequency (f1=frequency , f2=f1+100kHz, Pin=-12dBm) 15 26 P-1dB(IN) 24 IIP3 IIP3, OIP3 (dBm) P-1dB(IN) (dBm) 22 10 5 20 18 OIP3 16 14 12 0 400 - 10 - 450 500 550 600 650 Frequency (MHz) 700 750 800 10 400 450 500 550 600 650 Frequency (MHz) 700 750 800 NF (dB) Pout (dBm) -10 -40 -40 0.8 Gain -5 IDD (mA) 0 NJG1129MD7 ! ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: Ta=+25°C, VDD= VINV=2.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit Gain vs. Temp. K-factor vs. Frequency (fRF=620MHz) 0 20 -1 Gain (dB) K-factor 15 10 -2 Gain -3 5 -4 0 0 5000 10000 15000 -5 -50 20000 0 50 o Temperature ( C) Frequency (MHz) P-1dB(IN) vs. Temp. IIP3, OIP3 vs. Temp. (fRF=620MHz) (f1=620MHz, f2=620.1MHz, Pin=-12dBm) 25 100 30 IIP3 25 OIP3 IIP3, OIP3 (dBm) P-1dB(IN) (dBm) 20 P-1dB(IN) 15 20 15 10 10 5 5 -50 0 50 o Temperature ( C) 0 -50 100 0 50 100 o Temperature ( C) IDD vs. Temp. VSWR vs. Temp. (RF OFF) (fRF=470~770MHz) 1 3 VSWRi(max.) VSWRi(max.), VSWRo(max.) IDD (µA) 0.8 0.6 0.4 0.2 IDD 0 -50 0 50 o Temperature ( C) 100 2.5 2 VSWRo(max.) 1.5 1 0.5 0 -50 0 50 100 o Temperature ( C) - 11 - NJG1129MD7 ! ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: Ta=+25°C, VDD= VINV=2.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit - 12 - S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (50MHz~20GHz) S21, S12 (50MHz~20GHz) NJG1129MD7 ! APPLICATION CIRCUIT 11 10 L2 27nH 8 L3 22nH Bypass circuit 12 RF IN L1 22nH 9 C2 5pF 7 C1 3pF RF OUT L4 15nH LNA circuit VDD 13 Bias circuit Logic circuit 14 VCTL 6 1 2 C3 1000pF 5 3 4 VINV ! TEST PCB LAYOUT Parts List VDD RF IN L1 C1 L2 C3 Parts ID L1, L3, L4 L4 L3 C2 RF OUT L2 C1~C3 VCTL VINV Notes MURATA LQP03T series TAIYO-YUDEN HK1005 series MURATA GRM03 series PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH=0.4mm (Z0=50 ohm) PCB SIZE=16.8mmx16.8mm PRECAUTIONS [1] L1-L4, C1 and C2 formed the external matching circuit. [2] C3 is a bypass capacitor. [3] Ground terminals should be connected with ground plane as close as possible in order to avoid parasitic inductance. [4] Please place the ground trace between RFIN(12pin) and RFOUT(7pin) on the top PCB layout to have better isolation between input and output RF ports. [5] Please place all external parts around the IC as close as possible. - 13 - NJG1129MD7 ! MEASUREMENT BLOCK DIAGRAM VINV=2.8V VCTL=1.85V or 0.0V VDD =2.8V RF Input DUT RF Output Network Analyzer S parameter Measurement Block Diagram VINV=2.8V VCTL=1.85V or 0.0V VDD =2.8V RF Input DUT RF Output Noise Source NF Analyzer Noise Figure Measurement Block Diagram VINV=2.8V freq.1 2dB Attenuator VCTL=1.85V or 0.0V VDD =2.8V Signal Generator RF Input Signal Generator freq.2 - 14 - DUT RF Output Power Comb. 2dB Attenuator Input IP3 Measurement Block Diagram Spectrum Analyzer NJG1129MD7 ! PACKAGE OUTLINE (EQFN14-D7) Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - 15 -