NJRC NJG1152KA1

NJG1152KA1
Wide Band Low Noise Amplifier GaAs MMIC
I GENERAL DESCRIPTION
The NJG1152KA1 is a fully matched wide band low noise
amplifier GaAs MMIC for terrestrial application.
To achieve wide dynamic range, the NJG1152KA1 offers
high gain mode and low gain mode. Selecting high gain mode
for weak signals, the NJG1152KA1 helps improve receiver
sensitivity through high gain and low noise figure.
Selecting low gain mode for strong signals, it bypasses LNA
circuit to offer higher linearity.
An small and ultra-thin package of FLP6-A1 is adopted.
I PACKAGE OUTLINE
NJG1152KA1
I APPLICATIONS
Terrestrial application like Digital TV, Set-top box
I FEATURES
G Operating frequency
40 to 900MHz
G Package size
FLP6-A1 (Package size: 1.6x1.6x0.55mm typ.)
[ LNA mode, 50 ohm: Operating voltage 3.3V ]
G Operating current
20mA typ.
18.0dB typ.
G Small signal gain
G Noise figure
1.2dB typ. @f=40 to 150MHz
0.9dB typ. @f=150 to 900MHz
[ Bypass mode, 50 ohm: Operating voltage 0V ]
G Insertion loss
1.0dB typ.
G 2nd order intermodulation distortion
75dB typ.
G 3rd order intermodulation distortion
85dB typ.
I PIN CONFIGURATION
(Top View)
4
3
RFIN
RFOUT2
5
2
Bias
Circuit
GND
Logic
Circuit
6
GND
Pin connection
1. RFOUT1
2. GND
3. RFOUT2
4. RFIN
5. GND
6. VCTL
1
RFOUT1
VCTL
1pin Index
I TRUTH TABLE
“H”=VCTL(H)“L”=VCTL(L)
VCTL
LNA
Bypass
Mode select
H
ON
OFF
LNA mode
L
OFF
ON
Bypass mode
Note:
Specifications and description listed in this datasheet are subject to change without notice.
Ver.2013/04/16
1
NJG1152KA1
I ABSOLUTE MAXIMUM RATINGS
T a=+25°C, Zs=Zl=50 ohm
PARAMETER
SYMBOL
CONDITIONS
RATINGS
UNITS
Drain voltage
VDD
5.0
V
Control voltage
VCTL
5.0
V
Input power
PIN
VDD=3.3V
+10
dBm
Power dissipation
PD
4-layer FR4 PCB with through-hole
(74.2x74.2mm), Tj=150°C
580
mW
Operating temperature
Topr
-40 to +85
°C
Storage temperature
Tstg
-55 to +150
°C
I ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS)
VDD=3.3V, T a=+25°C, with application circuit
PARAMETERS
MIN
TYP
MAX
UNITS
VDD
2.3
3.3
3.6
V
Control voltage (High)
VCTL(H)
1.3
1.8
3.6
V
Control voltage (Low)
VCTL(L)
0.0
0.0
0.5
V
Operating voltage
SYMBOL
CONDITIONS
Operating current1
IDD1
RF OFF, VCTL=1.8V
-
20
45
mA
Operating current2
IDD2
RF OFF, VCTL=0V
-
17
35
µA
Control current
ICTL
RF OFF, VCTL=1.8V
-
6
20
µA
2
NJG1152KA1
I ELECTRICAL CHARACTERISTICS2 (RF CHARACTERISTICS: LNA mode, 50 ohm)
VDD=3.3V, VCTL=1.8V, freq=40 to 900MHz, T a=+25°C, ZS=Zl=50 ohm, with application circuit
PARAMETERS
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Small signal gain1
Gain1
Exclude PCB
& connector losses (Note1)
15.0
18.0
20.0
dB
Gain flatness1
Gflat1
-
1.0
2.0
dB
Noise figure1_1
NF1_1
-
1.2
2.0
dB
Noise figure1_2
NF1_2
-
0.9
1.4
dB
Input power 1dB
compression1
P-1dB(IN)1
-10.0
-5.0
-
dBm
+0.0
+7.0
-
dBm
18.0
28.0
-
dB
35.0
45.0
-
dB
ISL1
15.0
19.0
-
dB
RFIN VSWR1
VSWRi1
-
2.5
4.0
-
RFOUT VSWR1
VSWRo1
-
1.5
2.4
-
Input 3rd order
intercept point1
2nd order
intermodulation
distortion1
3rd order
intermodulation
distortion1
Isolation1
IIP3_1
IM2_1
IM3_1
freq=40 to 150MHz,
Exclude PCB
& connector losses (Note2)
freq=150 to 900MHz,
Exclude PCB
& connector losses (Note2)
f1=freq, f2=freq+100kHz,
PIN=-20dBm
f1=200MHz, f2=500MHz,
fmeas=700MHz,
PIN1=P IN2=-15dBm
f1=600MHz, f2=650MHz,
fmeas=700MHz,
PIN1=P IN2=-15dBm
(Note1) Input and output PCB, connector losses: 0.014dB(40MHz), 0.088dB(620MHz), 0.121dB(900MHz)
(Note2) Input PCB and connector losses: 0.007dB(40MHz), 0.044dB(620MHz), 0.060dB(900MHz)
3
NJG1152KA1
I ELECTRICAL CHARACTERISTICS3 (RF CHARACTERISTICS: Bypass mode, 50 ohm)
VDD=3.3V, VCTL=0V, freq=40 to 900MHz, T a=+25°C, ZS=Zl=50 ohm, with application circuit
PARAMETERS
Insertion loss2
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
LOSS2
Exclude PCB
& connector losses (Note1)
-
1.0
3.0
dB
+8.0
+15.0
-
dBm
+22.0
+30.0
60.0
75.0
-
dB
70.0
85.0
-
dB
Input power 1dB
compression2
P-1dB(IN)2
Input 3rd order
intercept point2
IIP3_2
2nd order
intermodulation
distortion2
3rd order
intermodulation
distortion2
IM2_2
IM3_2
f1=freq, f2=freq+100kHz,
PIN=-2dBm
f1=200MHz, f2=500MHz,
fmeas=700MHz,
PIN1=P IN2=-8dBm
f1=600MHz, f2=650MHz,
fmeas=700MHz,
PIN1=P IN2=-8dBm
dBm
RFIN VSWR2
VSWRi2
-
1.5
2.5
-
RFOUT VSWR2
VSWRo2
-
1.5
2.5
-
(Note1) Input and output PCB, connector losses: 0.014dB(40MHz), 0.088dB(620MHz), 0.121dB(900MHz)
I ELECTRICAL CHARACTERISTICS4 (RF CHARACTERISTICS: LNA mode, 75 ohm)
VDD=3.3V, VCTL=1.8V, freq=40 to 900MHz, T a=+25°C, ZS=Zl=75 ohm, with application circuit
PARAMETERS
Small signal gain3
SYMBOL
Gain3
CONDITIONS
Exclude PCB
& connector losses
MIN
TYP
MAX
UNITS
-
18.0
-
dB
RFIN VSWR3
VSWRi3
-
2.0
-
-
RFOUT VSWR3
VSWRo3
-
2.0
-
-
I ELECTRICAL CHARACTERISTICS5 (RF CHARACTERISTICS: Bypass mode, 75 ohm)
VDD=3.3V, VCTL=0V, freq=40 to 900MHz, T a=+25°C, ZS=Zl=75 ohm, with application circuit
PARAMETERS
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Insertion loss4
LOSS4
Exclude PCB
& connector losses
-
1.5
-
dB
Composite Second
Order4
CSO4
132channels, CW,
PIN=+15dBmV
-
80
-
dBc
Composite Triple
Beat4
CTB4
132channels, CW,
PIN=+15dBmV
-
80
-
dBc
RFIN VSWR4
VSWRi4
-
2.0
-
dB
RFOUT VSWR4
VSWRo4
-
2.0
-
dB
4
NJG1152KA1
ITERMINAL DESCRIPTION
Pin No.
SYMBOL
DESCRIPTION
1
RFOUT1
The RF output terminal of the LNA mode. This terminal doubles as the
drain terminal of the LNA. Please connect this terminal to the power
supply via choke inductor.
2
GND
Ground terminal. This terminal should be connected to the ground
plane as close as possible for excellent RF performance.
3
RFOUT2
The RF output terminal of the Bypass mode. Please connect this
terminal with RFOUT1 terminal through DC blocking capacitor shown
in the application circuit.
4
RFIN
RF input terminal. External capacitor C1 is required to block the DC
bias voltage of internal circuit.
5
GND
Ground terminal. This terminal should be connected to the ground
plane as close as possible for excellent RF performance.
6
VCTL
Control voltage terminal. At this terminal, the switching of the LNA
mode and Bypass mode is possible.
5
NJG1152KA1
I ELECTRICAL CHARACTERISTICS (LNA mode, 50 ohm)
Conditions: VDD=3.3V, VCTL=1.8V, Ta=25°C, Zs=Zl=50 ohm, with application circuit
NF, Gain vs. frequency
Pout vs. Pin
(freq=40~1500MHz)
(freq=620MHz)
3.0
Gain
2.5
14
2.0
12
1.5
Pout (dBm)
10
16
NF (dB)
18
Gain (dB)
20
3.5
20
0
Pout
-10
1.0
10
NF
-20
0.5
8
P-1dB(IN)=-4.8dBm
(Exclude PCB, Connector Losses)
0.0
1500
6
0
500
1000
-30
-40
-30
frequency (MHz)
-20
-10
0
Pin (dBm)
Gain, IDD vs. Pin
P-1dB(IN) vs. frequency
(freq=620MHz)
(freq=40~900MHz)
5
100
19
Gain
40
16
IDD
P-1dB(IN) (dBm)
Gain (dB)
60
17
IDD (mA)
80
18
0
-5
-10
20
15
P-1dB(IN)=-4.8dBm
14
-40
0
-30
-20
-10
-15
0
0
200
Pin (dBm)
400
600
Pout, IM3 vs. Pin
IIP3, OIP3 vs. frequency
(f1=620MHz, f2=f1+100kHz)
(f1=40~900MHz, f2=f1+100kHz, Pin=-20dBm)
1000
30
40
OIP3=+25.8dBm
OIP3
20
25
Pout
IIP3, OIP3 (dBm)
Pout, IM3 (dBm)
800
frequency (MHz)
0
-20
-40
IM3
20
15
10
-60
IIP3
IIP3=+7.9dBm
-80
-40
5
-30
-20
-10
Pin (dBm)
6
0
10
0
200
400
600
frequency (MHz)
800
1000
NJG1152KA1
I ELECTRICAL CHARACTERISTICS (LNA mode, 50 ohm)
Conditions: VDD=3.3V, VCTL=1.8V, Ta=25°C, Zs=Zl=50 ohm, with application circuit
RF IN Return Loss vs. frequency
RF OUT Return Loss vs. frequency
(freq=40~1500MHz)
0
5
RLo (dB)
5
RLi (dB)
(freq=40~1500MHz)
0
10
15
20
10
15
20
25
25
0
500
1000
1500
frequency (MHz)
0
500
1000
1500
frequency (MHz)
Reverse Isolation vs. frequency
(freq=40~1500MHz)
0
5
ISL (dB)
10
15
20
25
30
35
40
0
500
1000
1500
frequency (MHz)
7
NJG1152KA1
I ELECTRICAL CHARACTERISTICS (LNA mode, 50 ohm)
Conditions: VDD=3.3V, VCTL=1.8V, Ta=25°C, Zs=Zl=50 ohm, with application circuit
8
S11, S22
S21, S12
VSWRi, VSWRo
Zin, Zout
S11, S22 50MHz to 20GHz
S21, S12 50MHz to 20GHz
NJG1152KA1
I ELECTRICAL CHARACTERISTICS (LNA mode, 50 ohm)
Conditions: VCTL=1.8V, Ta=25°C, Zs=Zl=50 ohm, with application circuit
Gain vs. VDD
NF vs. VDD
30
4
25
3
NF (dB)
Gain (dB)
(freq=620MHz)
20
2
40MHz
15
1
620MHz
10
2.0
2.5
3.0
3.5
0
2.0
4.0
2.5
3.0
3.5
VDD (V)
VDD (V)
P-1dB(IN) vs. VDD
IIP3 vs. VDD
(f1=620MHz, f2=620.1MHz, Pin=-20dBm)
(freq=620MHz)
0
4.0
15
10
IIP3 (dBm)
P-1dB(IN) (dBm)
-2
-4
-6
5
0
-8
-10
2.0
2.5
3.0
3.5
-5
2.0
4.0
2.5
3.0
3.5
4.0
VDD (V)
VDD (V)
IM2 vs. VDD
(f1=200MHz, f2=500MHz, fmeas=700MHz, Pin1=Pin2=-15dBm)
80
IM3 vs. VDD
(f1=600MHz, f2=650MHz, fmeas=700MHz, Pin1=Pin2=-15dBm)
100
70
80
50
IM3 (dB)
IM2 (dB)
60
40
30
60
40
20
20
10
0
2.0
2.5
3.0
VDD (V)
3.5
4.0
0
2.0
2.5
3.0
3.5
4.0
VDD (V)
9
NJG1152KA1
I ELECTRICAL CHARACTERISTICS (LNA mode, 50 ohm)
Conditions: VCTL=1.8V, Ta=25°C, Zs=Zl=50 ohm, with application circuit
RF IN Return Loss vs. VDD
RF OUT Return Loss vs. VDD
(freq=620MHz)
0
0
5
5
RLo (dB)
RLi (dB)
(freq=620MHz)
10
15
20
25
2.0
10
15
20
2.5
3.0
3.5
25
2.0
4.0
2.5
3.0
3.5
VDD (V)
VDD (V)
IDD vs. VDD
K factor vs. frequency
4.0
(freq=50MHz~20GHz)
(RF OFF)
20
40
16
K factor
IDD (mA)
30
20
12
8
VDD 2.0V
10
4
VDD 3.3V
VDD 4.0V
0
2.0
0
2.5
3.0
3.5
4.0
VDD (V)
(freq=620MHz)
Reverse Isolation (dB)
10
15
20
25
2.5
3.0
VDD (V)
10
5
10
frequency (GHz)
Reverse Isolation vs. VDD
30
2.0
0
3.5
4.0
15
20
NJG1152KA1
I ELECTRICAL CHARACTERISTICS (LNA mode, 50 ohm)
Conditions: VDD=3.3V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit
Gain vs. Temperature
NF vs. Temperature
30
4
25
3
NF (dB)
Gain (dB)
(freq=620MHz)
20
15
2
40MHz
1
620MHz
10
-40
-20
0
20
40
60
80
0
-40
100
-20
0
40
60
80
P-1dB(IN) vs. Temperature
IIP3 vs. Temperature
(freq=620MHz)
(f1=620MHz, f2=620.1MHz, Pin=-20dBm)
0
12
-2
10
-4
-6
-8
-40
20
100
Temperature ( oC)
IIP3 (dBm)
P-1dB(IN) (dBm)
Temperature ( oC)
8
6
-20
0
20
40
60
80
4
-40
100
-20
0
Temperature ( oC)
20
40
60
80
100
Temperature ( oC)
IM2 vs. Temperature
IM3 vs. Temperature
(f1=200MHz, f2=500MHz, fmeas=700MHz, Pin1=Pin2=-15dBm)
80
(f1=600MHz, f2=650MHz, fmeas=700MHz, Pin1=Pin2=-15dBm)
100
70
80
50
IM3 (dB)
IM2 (dB)
60
40
30
60
40
20
20
10
0
-40
-20
0
20
40
60
Temperature ( oC)
80
100
0
-40
-20
0
20
40
60
80
100
Temperature ( oC)
11
NJG1152KA1
I ELECTRICAL CHARACTERISTICS (LNA mode, 50 ohm)
Conditions: VDD=3.3V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit
RF IN Return Loss vs. Temperature
RF OUT Return Loss vs. Temperature
(freq=620MHz)
0
0
5
5
RLo (dB)
RLi (dB)
(freq=620MHz)
10
15
20
25
-40
10
15
20
-20
0
20
40
60
80
25
-40
100
-20
0
40
60
80
Temperature ( oC)
Reverse Isolation vs. Temperature
K factor vs. frequency
100
(freq=50MHz~20GHz)
(freq=620MHz)
20
10
16
15
K factor
Reverse Isolation (dB)
20
Temperature ( oC)
20
12
8
Ta -40 oC
25
4
Ta +25o C
Ta +85o C
30
-40
0
-20
0
20
40
60
80
0
100
5
10
15
Temperature ( oC)
frequency (GHz)
IDD vs. Temperature
IDD vs. Temperature
20
(RF OFF)
(RF OFF)
40
30
25
30
IDD (mA)
IDD (mA)
20
20
15
10
Ta -40 oC
10
Ta +25o C
5
Ta +85o C
0
-40
-20
0
20
40
60
Temperature ( oC)
12
80
100
0
0.0
0.5
1.0
VCTL (V)
1.5
2.0
NJG1152KA1
I ELECTRICAL CHARACTERISTICS (Bypass mode, 50 ohm)
Conditions: VDD=3.3V, VCTL=0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit
Pout vs. Pin
Loss vs. frequency
(freq=620MHz)
(freq=40~1500MHz)
0
20
1
10
Pout (dBm)
Loss (dB)
2
3
4
0
Pout
-10
5
-20
6
P-1dB(IN)=+14.4dBm
(Exclude PCB, Connector Losses)
-30
-20
7
0
500
1000
1500
-10
0
10
frequency (MHz)
Pin (dBm)
Loss, IDD vs. Pin
P-1dB(IN) vs. frequency
(freq=620MHz)
0
(freq=40~900MHz)
25
50
20
Loss
2
30
3
20
4
P-1dB(IN) (dBm)
40
IDD (mA)
Loss (dB)
1
20
15
10
10
IDD
P-1dB(IN)=+14.4dBm
5
-20
5
0
-10
0
10
0
20
200
Pin (dBm)
600
800
Pout, IM3 vs. Pin
IIP3, OIP3 vs. frequency
(f1=620MHz, f2=f1+100kHz)
(f1=40~900MHz, f2=f1+100kHz, Pin=-2dBm)
1000
45
40
20
400
frequency (MHz)
OIP3=+33.6dBm
IIP3, OIP3 (dBm)
Pout, IM3 (dBm)
40
0
Pout
-20
-40
-60
IM3
IIP3
35
OIP3
30
25
-80
IIP3=+34.4dBm
-100
-30
20
-20
-10
0
10
Pin (dBm)
20
30
40
0
200
400
600
800
1000
frequency (MHz)
13
NJG1152KA1
I ELECTRICAL CHARACTERISTICS (Bypass mode, 50 ohm)
Conditions: VDD=3.3V, VCTL=0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit
RF IN Return Loss vs. frequency
RF OUT Return Loss vs. frequency
(freq=40~1500MHz)
0
5
RLo (dB)
RLi (dB)
5
10
15
20
10
15
20
25
25
0
500
1000
frequency (MHz)
14
(freq=40~1500MHz)
0
1500
0
500
1000
frequency (MHz)
1500
NJG1152KA1
I ELECTRICAL CHARACTERISTICS (Bypass mode, 50 ohm)
Conditions: VDD=3.3V, VCTL=0V, Zs=Zl=50 ohm, with application circuit
S11, S22
S21, S12
VSWRi, VSWRo
Zin, Zout
S11, S22 50MHz to 20GHz
S21, S12 50MHz to 20GHz
15
NJG1152KA1
I ELECTRICAL CHARACTERISTICS (Bypass mode, 50 ohm)
Conditions: VCTL=0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit
Loss vs. VDD
(freq=620MHz)
4
Loss (dB)
3
2
1
0
2.0
2.5
3.0
3.5
4.0
VDD (V)
P-1dB(IN) vs. VDD
IIP3 vs. VDD
(f1=620MHz, f2=620.1MHz, Pin=-2dBm)
20
40
15
35
IIP3 (dBm)
P-1dB(IN) (dBm)
(freq=620MHz)
10
5
0
2.0
30
25
2.5
3.0
3.5
20
2.0
4.0
2.5
VDD (V)
3.0
3.5
4.0
VDD (V)
IM2 vs. VDD
(f1=200MHz, f2=500MHz, fmeas=700MHz, Pin1=Pin2=-8dBm)
80
IM3 vs. VDD
(f1=600MHz, f2=650MHz, fmeas=700MHz, Pin1=Pin2=-8dBm)
100
70
80
50
IM3 (dB)
IM2 (dB)
60
40
30
60
40
20
20
10
0
2.0
2.5
3.0
VDD (V)
16
3.5
4.0
0
2.0
2.5
3.0
VDD (V)
3.5
4.0
NJG1152KA1
I ELECTRICAL CHARACTERISTICS (Bypass mode, 50 ohm)
Conditions: VCTL=0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit
RF IN Return Loss vs. VDD
RF OUT Return Loss vs. VDD
(freq=620MHz)
0
0
5
5
RLo (dB)
RLi (dB)
(freq=620MHz)
10
15
20
25
2.0
10
15
20
2.5
3.0
3.5
4.0
VDD (V)
25
2.0
2.5
3.0
3.5
4.0
VDD (V)
IDD vs. VDD
(RF OFF)
40
IDD (uA)
30
20
10
0
2.0
2.5
3.0
3.5
4.0
VDD (V)
17
NJG1152KA1
I ELECTRICAL CHARACTERISTICS (Bypass mode, 50 ohm)
Conditions: VDD=3.3V, VCTL=0V, Zs=Zl=50 ohm, with application circuit
Loss vs. Temperature
(freq=620MHz)
4
Loss (dB)
3
2
1
0
-40
-20
0
20
40
60
80
100
P-1dB(IN) vs. Temperature
IIP3 vs. Temperature
(freq=620MHz)
(f1=620MHz, f2=620.1MHz, Pin=-2dBm)
20
40
15
35
IIP3 (dBm)
P-1dB(IN) (dBm)
Temperature ( oC)
10
5
0
-40
30
25
-20
0
20
40
60
80
20
-40
100
-20
Temperature ( oC)
0
20
40
60
80
100
Temperature ( oC)
IM2 vs. Temperature
IM3 vs. Temperature
(f1=200MHz, f2=500MHz, fmeas=700MHz, Pin1=Pin2=-8dBm)
80
(f1=600MHz, f2=650MHz, fmeas=700MHz, Pin1=Pin2=-8dBm)
100
70
80
50
IM3 (dB)
IM2 (dB)
60
40
30
60
40
20
20
10
0
-40
-20
0
20
40
60
Temperature ( oC)
18
80
100
0
-40
-20
0
20
40
60
Temperature ( oC)
80
100
NJG1152KA1
I ELECTRICAL CHARACTERISTICS (Bypass mode, 50 ohm)
Conditions: VDD=3.3V, VCTL=0V, Zs=Zl=50 ohm, with application circuit
RF IN Return Loss vs. Temperature
RF OUT Return Loss vs. Temperature
(freq=620MHz)
0
0
5
5
RLo (dB)
RLi (dB)
(freq=620MHz)
10
15
20
25
-40
10
15
20
-20
0
20
40
60
80
100
Temperature ( oC)
25
-40
-20
0
20
40
60
80
100
Temperature ( oC)
IDD vs. Temperature
(RF OFF)
40
IDD (uA)
30
20
10
0
-40
-20
0
20
40
60
80
100
Temperature ( oC)
19
NJG1152KA1
I ELECTRICAL CHARACTERISTICS (LNA mode, 75 ohm)
Conditions: VDD=3.3V, VCTL=1.8V, Ta=25°C, Zs=Zl=75 ohm, with application circuit
Gain vs. frequency
(freq=40~1500MHz, Zs=Zl=75ohm)
20
18
Gain (dB)
16
14
12
10
8
(Exclude PCB, Connector Losses)
6
0
500
1000
1500
frequency (MHz)
RF IN Return Loss vs. frequency
RF OUT Return Loss vs. frequency
(freq=40~1500MHz, Zs=Zl=75ohm)
0
5
RLo (dB)
RLi (dB)
5
10
15
20
10
15
20
25
25
0
500
1000
frequency (MHz)
20
(freq=40~1500MHz, Zs=Zl=75ohm)
0
1500
0
500
1000
frequency (MHz)
1500
NJG1152KA1
I ELECTRICAL CHARACTERISTICS (LNA mode, 75 ohm)
Conditions: VCTL=1.8V, Ta=25°C, Zs=Zl=75 ohm, with application circuit
Gain vs. VDD
(freq=620MHz, Zs=Zl=75ohm)
30
Gain (dB)
25
20
15
10
2.0
2.5
3.0
3.5
4.0
VDD (V)
RF IN Return Loss vs. VDD
RF OUT Return Loss vs. VDD
(freq=620MHz, Zs=Zl=75ohm)
0
0
5
5
RLo (dB)
RLi (dB)
(freq=620MHz, Zs=Zl=75ohm)
10
15
20
25
2.0
10
15
20
2.5
3.0
VDD (V)
3.5
4.0
25
2.0
2.5
3.0
3.5
4.0
VDD (V)
21
NJG1152KA1
I ELECTRICAL CHARACTERISTICS (LNA mode, 75 ohm)
Conditions: VDD=3.3V, VCTL=1.8V, Zs=Zl=75 ohm, with application circuit
Gain vs. Temperature
(freq=620MHz, Zs=Zl=75ohm)
30
Gain (dB)
25
20
15
10
-40
-20
0
20
40
60
80
100
Temperature ( oC)
RF IN Return Loss vs. Temperature
RF OUT Return Loss vs. Temperature
(freq=620MHz, Zs=Zl=75ohm)
0
0
5
5
RLo (dB)
RLi (dB)
(freq=620MHz, Zs=Zl=75ohm)
10
15
20
25
-40
15
20
-20
0
20
40
60
Temperature ( oC)
22
10
80
100
25
-40
-20
0
20
40
60
Temperature ( oC)
80
100
NJG1152KA1
I ELECTRICAL CHARACTERISTICS (Bypass mode, 75 ohm)
Conditions: VDD=3.3V, VCTL=0V, Ta=25°C, Zs=Zl=75 ohm, with application circuit
Loss vs. frequency
(freq=40~1500MHz, Zs=Zl=75ohm)
0
1
Loss (dB)
2
3
4
5
6
(Exclude PCB, Connector Losses)
7
0
500
1000
1500
frequency (MHz)
RF IN Return Loss vs. frequency
RF OUT Return Loss vs. frequency
(freq=40~1500MHz, Zs=Zl=75ohm)
0
5
RLo (dB)
5
RLi (dB)
(freq=40~1500MHz, Zs=Zl=75ohm)
0
10
15
20
10
15
20
25
25
0
500
1000
frequency (MHz)
1500
0
500
1000
1500
frequency (MHz)
23
NJG1152KA1
I ELECTRICAL CHARACTERISTICS (Bypass mode, 75 ohm)
Conditions: VCTL=0V, Ta=25°C, Zs=Zl=75 ohm, with application circuit
Loss vs. VDD
(freq=620MHz, Zs=Zl=75ohm)
4
Loss (dB)
3
2
1
0
2.0
2.5
3.0
3.5
4.0
VDD (V)
RF IN Return Loss vs. VDD
RF OUT Return Loss vs. VDD
(freq=620MHz, Zs=Zl=75ohm)
0
0
5
5
RLo (dB)
RLi (dB)
(freq=620MHz, Zs=Zl=75ohm)
10
15
20
25
2.0
15
20
2.5
3.0
VDD (V)
24
10
3.5
4.0
25
2.0
2.5
3.0
VDD (V)
3.5
4.0
NJG1152KA1
I ELECTRICAL CHARACTERISTICS (Bypass mode, 75 ohm)
Conditions: VDD=3.3V, VCTL=0V, Zs=Zl=75 ohm, with application circuit
Loss vs. Temperature
(freq=620MHz, Zs=Zl=75ohm)
4
Loss (dB)
3
2
1
0
-40
-20
0
20
40
60
80
100
Temperature ( oC)
RF IN Return Loss vs. Temperature
RF OUT Return Loss vs. Temperature
(freq=620MHz, Zs=Zl=75ohm)
0
0
5
5
RLo (dB)
RLi (dB)
(freq=620MHz, Zs=Zl=75ohm)
10
15
20
25
-40
10
15
20
-20
0
20
40
60
Temperature ( oC)
80
100
25
-40
-20
0
20
40
60
80
100
Temperature ( oC)
25
NJG1152KA1
I APPLICATION CIRCUIT
(Top view)
RF IN
C2
0.01u
C1
0.01u
4
R1
180k
3
RFIN
RFOUT2
5
2
Bias
Circuit
GND
VCTL
GND
L2
18n
Logic
Circuit
6
1
RFOUT1
VCTL
C3
0.01u RF OUT
R2
680
L1
470n
VDD
1pin Index
C4
0.01u
I TEST PCB LAYOUT
(Top View)
R1
C2 C3
RFIN
RFOUT
C1
L2
R2
L1
C4
VCTL
PCB: FR-4, t=0.2mm
Microstrip line width: 0.4mm
PCB size: 16.8mm x 16.8mm
VDD
1pin Index
Parts List
Parts ID
L1
L2
C1~C4
R1, R2
Manufacture
TAIYO-YUDEN HK1608 Series
TAIYO-YUDEN HK1005 Series
MURATA GRM15 Series
KOA RK73 Series
PRECAUTIONS
- C1 to C3 is DC-Blocking capacitors, and C4 is a bypass capacitor.
- L1 is RF choke inductor. (DC feed inductor)
- R1 is the resistance to adjust the operating current.
- R2 is the resistance for stability.
- L2 is the inductor to adjust the impedance matching.
- All external parts, please be placed as close to the IC.
- In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC.
26
NJG1152KA1
I MEASUREMENT BLOCK DIAGRAM
Measuring instruments
NF Analyzer
: Agilent 8973A
Noise Source
: Agilent 346A
Setting the NF analyzer
Measurement mode form
Device under test
: Amplifier
System downconverter : off
Mode setup form
Sideband
: LSB
Averages
:4
Average mode
: Point
Bandwidth
: 4MHz
Loss comp
: off
Tcold
: setting the temperature of noise source (303K)
NF Analyzer
(Agilent 8973A)
Noise Source
(Agilent 346A)
Input (50 ohm)
Noise Source
Drive Output
* Noise source
and NF analyzer are
connected directly.
Calibration Setup
NF Analyzer
(Agilent 8973A)
Noise Source
(Agilent 346A)
IN
DUT
OUT
Input (50 ohm)
Noise Source
Drive Output
* Noise source and DUT,
DUT and NF analyzer
are connected directly.
Measurement Setup
27
NJG1152KA1
I PACKAGE OUTLINE (FLP6-A1)
1.6 0.05
0.05
0.13 0.05
0.1
0.5
0.2 0.1
0.5
1.6 0.05
1.2 0.05
0.2 0.1
0.55
0.1
0.22 0.05
Unit
Leads Material
Leads Finish
Molding Material
Weight
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this product, please obey the relating law of your country.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please
handle with care to avoid these damages.
28
: mm
: Copper
: SnBi
: Epoxy Resin
: 3.1mg
[CAUTION]
The specifications on this databook are only
given for information, without any guarantee
as regards either mistakes or omissions.
The application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right
including the industrial rights.