NJG1142KA1 WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION PACKAGE OUTLINE The NJG1142KA1 is a wide band low noise amplifier GaAs MMIC designed for mobile TV application. And this amplifier can be tuned to wide frequency (170MHz~900MHz). The NJG1142KA1 has a LNA pass-through function to select high gain mode or low gain mode by low control voltage operation. The NJG1142KA1 features low current consumption, high linearity. An ultra-small and ultra-thin package of FLP6-A1 is adopted. NJG1142KA1 APPLICATIONS Wide band applications from 170MHz to 900MHz Mobile TV and Digital TV applications Mobile phone and tablet PC applications FEATURES Wide operating frequency range 170MHz~900MHz Low voltage operation +2.8V/+1.8V typ. [High gain mode] Low current consumption 6mA typ. @Vdd=2.8V High gain +14.0dB typ. @Vdd=2.8V Low noise figure 1.5dB typ. @Vdd=2.8V 0dBm typ. @Vdd=2.8V High P-0.1dB Compression +2.0dBm typ. @Vdd=2.8V High input IP3 [Low gain mode] Low current consumption 11µA typ. @Vdd=2.8V -1.0dB typ. @Vdd=2.8V Gain (Low loss) +17dBm typ. @Vdd=2.8V High P-0.1dB Compression +22.0dBm typ. @Vdd=2.8V High input IP3 External components count 3 pcs. (capacitor: 2pcs, inductor: 1pc) Small package size FLP6-A1 (package size: 1.6mm x 1.6mm x 0.55mm typ.) RoHS compliant and Halogen Free PIN CONFIGURATION (Top View) 4 3 GND 5 PIN CONNECTION 1. VCTL 2. GND 3. RFOUT 4. GND 5. GND 6. RFIN RFOUT GND Bias circuit 6 Logic circuit 2 GND TRUTH TABLE RFIN 1 VCTL “H” = VCTL(H) “L” = VCTL(L) 1Pin INDEX VCTL H L LNA Mode High Gain Mode Low Gain Mode NOTE: The information on this datasheet is subject to change without notice Ver.2013-04-18 -1- NJG1142KA1 ABSOLUTE MAXIMUM RATINGS T a=+25°C, Zs =Zl =50 ohm PARAMETER SYMBOL CONDITIONS RATINGS UNITS Supply voltage VDD 5.0 V Control voltage VCTL 5.0 V Input power P IN VDD=2.8V +15 dBm Power dissipation PD 4-layer FR4 PCB with through-hole (74.2mmx74.2mm), Tj=150°C 580 mW Operating temperature T opr -40~+85 °C Storage temperature T stg -55~+150 °C ELECTRICAL CHARACTERISTICS 1 DC CHARACTERISTICS General conditions: V DD =2.8V, T a=+25°C, Zs=Zl =50 ohm, with application circuit PARAMETERS MIN TYP MAX UNITS VDD 2.3 2.8 3.6 V Control voltage (High) VCTL(H) 1.3 1.8 3.6 V Control voltage (Low) VCTL(L) 0.0 0.0 0.5 V Operating voltage SYMBOL CONDITIONS Operating current1 IDD1 RF OFF, VCTL=1.8V - 6.0 9.5 mA Operating current2 IDD2 RF OFF, VCTL=0V - 11.0 25.0 µA Control current ICTL RF OFF, VCTL=1.8V - 6.0 10.0 µA -2- NJG1142KA1 ELECTRICAL CHARACTERISTICS 1 RF CHARACTERISTICS1 (High Gain Mode) Conditions: VDD =2.8V, VCTL=1.8V, f RF=170~900MHz, T a=+25°C, Z s=Zl =50ohm, with application circuit PARAMETERS Small signal gain1 Noise figure1 SYMBOL Gain1 NF1 Input power 1dB gain compression1 P-1dB(IN)1 Input 3rd order intercept point1 IIP3_1 Isolation1 ISL1 CONDITIONS Exclude PCB, connector losses*1 Exclude PCB & connector losses*2 f1=f RF, f2=f RF+100kHz, P IN=-26dBm Exclude PCB & connector losses*1 MIN TYP MAX UNITS 11.0 14.0 18.0 dB - 1.5 1.9 dB -5.0 0.0 - dBm -3.0 +2.0 - dBm - -19 - dB RF IN VSWR1 VSWRi1 - 1.5 2.3 - RF OUT VSWR1 VSWRo1 - 1.5 2.2 - *1 Input & output PCB and connector losses: 0.035dB(at 170MHz), 0.088dB(620MHz), 0.120dB(at 900MHz) *2 Input PCB and connector losses: 0.018dB(170MHz), 0.044dB(620MHz), 0.060dB(900MHz) ELECTRICAL CHARACTERISTICS 1 RF CHARACTERISTICS2 (Low Gain Mode) Conditions: VDD =2.8V, VCTL=0V, f RF=170~900MHz, T a=+25°C, Zs =Zl =50ohm, with application circuit PARAMETERS Small signal gain2 SYMBOL CONDITIONS MIN TYP MAX UNITS Gain2 Exclude PCB & connector losses*1 -2.5 -1.0 - dB +14.0 +17.0 - dBm +17.0 +22.0 - dBm Input power at 1dB gain compression2 P-1dB(IN)2 Input 3rd order intercept point2 IIP3_2 RF IN VSWR2 VSWRi2 - 1.5 2.0 - RF OUT VSWR2 VSWRo2 - 1.5 2.0 - f1=f RF, f2=f RF+100kHz, P IN=-8dBm *1 Input & output PCB and connector losses: 0.035dB(at 170MHz), 0.088dB(620MHz), 0.120dB(at 900MHz) -3- NJG1142KA1 ELECTRICAL CHARACTERISTICS 2 DC CHARACTERISTICS General conditions: V DD =1.8V, T a=+25°C, Zs=Zl =50 ohm, with application circuit PARAMETERS MIN TYP MAX UNITS VDD - 1.8 - V Control voltage (High) VCTL(H) - 1.8 - V Control voltage (Low) VCTL(L) - 0.0 - V Operating voltage SYMBOL CONDITIONS Operating current1 IDD1 RF OFF, VCTL=1.8V - 4.2 - mA Operating current2 IDD2 RF OFF, VCTL=0V - 6.4 - µA Control current ICTL RF OFF, VCTL=1.8V - 5.6 - µA ELECTRICAL CHARACTERISTICS 2 RF CHARACTERISTICS1 (High Gain Mode) Conditions: VDD =1.8V, VCTL=1.8V, f RF=170~900MHz, T a=+25°C, Z s=Zl =50ohm, with application circuit PARAMETERS Small signal gain1 Noise figure1 SYMBOL Gain1 NF1 Input power 1dB gain compression1 P-1dB(IN)1 Input 3rd order intercept point1 IIP3_1 Isolation1 ISL1 CONDITIONS MIN TYP MAX UNITS - 12.1 - dB - 1.75 - dB - -1.6 - dBm f1=f RF, f2=f RF+100kHz, P IN=-26dBm - +2.0 - dBm Exclude PCB & connector losses*1 - -18.4 - dB Exclude PCB, connector losses*1 Exclude PCB & connector losses*2 RF IN VSWR1 VSWRi1 - 1.67 - - RF OUT VSWR1 VSWRo1 - 1.96 - - *1 Input and output PCB, connector losses : 0.035dB(at 170MHz), 0.088dB(at 620MHz), 0.120dB(at 900MHz) *2 Input PCB, connector losses : 0.018dB(at 170MHz), 0.044dB(at 620MHz), 0.060dB(at 900MHz) -4- NJG1142KA1 ELECTRICAL CHARACTERISTICS 2 RF CHARACTERISTICS2 (Low Gain Mode) Conditions: VDD =1.8V, VCTL=0V, f RF=170~900MHz, T a=+25°C, Zs =Zl =50ohm, with application circuit PARAMETERS Small signal gain2 SYMBOL CONDITIONS MIN TYP MAX UNITS Gain2 Exclude PCB & connector losses*1 - -1.1 - dB - +18.9 - dBm - +24.0 - dBm Input power at 1dB gain compression2 P-1dB(IN)2 Input 3rd order intercept point2 IIP3_2 RF IN VSWR2 VSWRi2 - 1.33 - - RF OUT VSWR2 VSWRo2 - 1.15 - - f1=f RF, f2=f RF+100kHz, P IN=-8dBm *1 Input and output PCB, connector losses : 0.035dB(at 170MHz), 0.088dB(at 620MHz), 0.120dB(at 900MHz) TERMINAL INFORMATION No. SYMBOL 1 VCTL Control voltage supply terminal. 2 GND Ground terminal. These terminals should be connected to the ground plane as close as possible for excellent RF performance. 3 RFOUT RF output terminal. This terminal is also the power supply terminal of the LNA. please use inductor (L1) to connect power supply. 4 GND Ground terminal. These terminals should be connected to the ground plane as close as possible for excellent RF performance.。 5 GND Ground terminal. These terminals should be connected to the ground plane as close as possible for excellent RF performance. 6 RFIN RF input terminal. This IC is integrated an input DC blocking capacitor. DESCRIPTION -5- NJG1142KA1 ELECTRICAL CHARACTERISTICS (High Gain Mode) (Condition :Ta=+25℃, VDD=2.8V, VCTL=1.8V, Zs=Zl=50ohm, with application circuit) Gain, IDD vs. Pin Pout vs. Pin (freq=620MHz) (freq=620MHz) 16 10 Gain 14 Gain (dB) 0 -10 Pout 40 12 30 10 20 IDD -20 8 -30 10 P-1dB(IN)=0dBm P-1dB(IN)=0dBm -40 -40 -30 -20 -10 0 6 -40 10 0 -30 -10 0 Pout, IM3 vs. Pin NF, Gain vs. frequency (f1=620MHz, f2=f1+100kHz) (freq=50~2000MHz) 20 4 16 3.5 0 Noise Figure (dB) Pout -20 -40 IM3 -60 -80 14 Gain 3 2.5 2 8 NF 1.5 6 1 4 0.5 2 (Exclude PCB, Connector Losses) 0 -30 -20 -10 12 10 IIP3=+2.4dBm -100 -40 10 Pin (dBm) Pin (dBm) Pout, IM3 (dBm) -20 0 10 20 0 500 Pin (dBm) 1000 1500 0 2000 frequency (MHz) P-1dB(IN) vs. frequency IIP3, OIP3 vs. frequency (freq=50~2000MHz) (f1=50~2000MHz, f2=f1+100kHz, Pin=-26dBm) 10 20 5 IIP3, OIP3 (dBm) P-1dB(IN) (dBm) OIP3 0 -5 15 10 5 IIP3 -10 0 0 500 1000 frequency (MHz) -6- 1500 2000 0 500 1000 frequency (MHz) 1500 2000 Gain (dB) Pout (dBm) 50 IDD (mA) 20 NJG1142KA1 ELECTRICAL CHARACTERISTICS (High Gain Mode) (Condition :Ta=+25℃, VCTL=1.8V, Zs=Zl=50ohm, with application circuit) NF, Gain vs. VDD P-1dB(IN) vs. VDD (freq=620MHz) (freq=620MHz) 4 3.5 14 Gain 3 12 2.5 10 2 8 NF 1.5 6 1 4 0.5 Gain (dB) P-1dB(IN) (dBm) Noise Figure (dB) 10 16 5 0 -5 2 (Exclude PCB, Connector Losses) 0 1.5 -10 1.5 0 2.0 2.5 3.0 3.5 4.0 4.5 2.0 2.5 VDD (V) 3.0 3.5 4.0 4.5 3.5 4.0 4.5 3.5 4.0 4.5 VDD (V) IIP3, OIP3 vs. VDD VSWR vs. VDD (f1=620MHz, f2=f1+100kHz, Pin=-26dBm) (freq=620MHz) 20 3 2.5 VSWR IIP3, OIP3 (dBm) OIP3 15 10 5 2 1.5 IIP3 0 1.5 VSWRo 2.0 VSWRi 2.5 3.0 3.5 4.0 1 1.5 4.5 2.0 2.5 VDD (V) IDD vs. VDD Isolation vs. VDD (RF OFF) (freq=620MHz) 0 10 -5 8 -10 IDD (mA) Isolation (dB) 3.0 VDD (V) -15 6 4 -20 2 -25 -30 1.5 0 1.5 2.0 2.5 3.0 VDD (V) 3.5 4.0 4.5 2.0 2.5 3.0 VDD (V) -7- NJG1142KA1 ELECTRICAL CHARACTERISTICS (High Gain Mode) (Condition : VDD =2.8V, VCTL=1.8V, Zs=Zl=50ohm, with application circuit) NF, Gain vs. Temperature P-1dB(IN) vs. Tempareture (freq=620MHz) (freq=620MHz) 16 3.5 14 Gain Noise Figure (dB) 3 12 2.5 10 2 8 NF 1.5 6 1 4 0.5 10 Gain (dB) P-1dB(IN) (dBm) 4 5 0 -5 2 (Exclude PCB, Connector Losses) 0 -40 -20 0 20 40 60 80 -10 -40 0 100 -20 0 Temperature (oC) 20 40 60 80 100 80 100 Tempareture (oC) IIP3, OIP3 vs. Temperature VSWR vs. Temperature (f1=620MHz, f2=f1+100kHz, Pin=-26dBm) (freq=620MHz) 20 3 15 2.5 VSWR 10 5 2 VSWRo 1.5 IIP3 0 -40 -20 VSWRi 0 20 40 60 80 1 -40 100 -20 0 Temperature (oC) 40 60 IDD, ICTL vs. Temperature Isolation vs. Temperature (RF OFF) (freq=620MHz) 0 10 -5 8 25 IDD 20 -10 IDD (mA) Isolation (dB) 20 Temperature (oC) -15 6 15 4 10 ICTL -20 2 5 -25 -30 -40 -20 0 20 40 60 Temperature (oC) -8- 80 100 0 -40 -20 0 20 40 60 Temperature (oC) 80 0 100 µ A) ICTL (µ IIP3, OIP3 (dBm) OIP3 NJG1142KA1 ELECTRICAL CHARACTERISTICS(High Gain Mode) (Condition :Ta=+25℃, VDD =2.8V, VCTL=1.8V, Zs=Zl=50ohm, with application circuit) S11, S22 VSWRi, VSWRo S21, S12 Zin, Zout -9- NJG1142KA1 ELECTRICAL CHARACTERISTICS (High Gain Mode) (Condition :Ta=+25℃, VDD =2.8V, VCTL=1.8V, Zs=Zl=50ohm, with application circuit) S21, S12 (50MHz~20GHz) S11, S22 (50MHz~20GHz) K factor vs. frequency (freq=50MHz~20GHz) 20 o +25 C o o +60 C o +85 C -40 C o -20 C K factor 15 o 0C 10 5 0 0.0 5.0 10 frequency (GHz) - 10 - 15 20 NJG1142KA1 ELECTRICAL CHARACTERISTICS (Low Gain Mode) (Condition :Ta=+25℃, VDD =2.8V, VCTL=0V, Zs=Zl=50ohm, with application circuit) Pout vs. Pin Gain, IDD vs. Pin (freq=620MHz) (freq=620MHz) 0 10 Gain -2 Gain (dB) 0 Pout (dBm) 50 -10 Pout -20 40 -4 30 -6 20 IDD -8 -30 10 P-1dB(IN)=22.2dBm P-1dB(IN)=+22.2dBm -40 -40 -30 IDD (µ A) 20 -20 -10 0 10 20 -10 -40 30 0 -30 -20 Pin (dBm) -10 0 10 20 30 Pin (dBm) Pout, IM3 vs. Pin Gain vs. frequency (f1=620MHz, f2=f1+100kHz) (freq=50~2000MHz) 0 40 20 Gain (dB) Pout, IM3 (dBm) -2 Pout 0 -20 IM3 -40 -4 -6 -60 -8 -80 IIP3=+23.8dBm -100 -30 -10 -20 -10 0 10 20 0 30 500 1000 1500 2000 frequency (MHz) P-1dB(IN) vs. frequency IIP3, OIP3 vs. frequency (freq=50~2000MHz) (f1=50~2000MHz, f2=f1+100kHz, Pin=-8dBm) 25 30 20 25 IIP3, OIP3 (dBm) P-1dB(IN) (dBm) Pin (dBm) 15 10 5 IIP3 OIP3 20 15 10 0 500 1000 frequency (MHz) 1500 2000 0 500 1000 1500 2000 frequency (MHz) - 11 - NJG1142KA1 ELECTRICAL CHARACTERISTICS (Low Gain Mode) (Condition :Ta=+25℃, VCTL=0V, Zs=Zl=50ohm, with application circuit) Gain vs. VDD P-1dB(IN) vs. VDD (freq=620MHz) (freq=620MHz) 0 25 P-1dB(IN) (dBm) Gain (dB) -1 -2 -3 20 15 10 -4 -5 1.5 2.0 2.5 3.0 3.5 4.0 5 1.5 4.5 2.0 2.5 IIP3, OIP3 vs. VDD VSWR vs. VDD 4.0 4.5 4.0 4.5 (freq=620MHz) 2 30 1.8 IIP3 VSWR IIP3, OIP3 (dBm) 3.5 VDD (V) (f1=620MHz, f2=f1+100kHz, Pin=-8dBm) 25 3.0 VDD (V) OIP3 20 1.6 1.4 VSWRi 15 1.2 VSWRo 10 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDD (V) (RF OFF) 30 25 IDD (µ A) 20 15 10 5 2.0 2.5 3.0 VDD (V) - 12 - 2.0 2.5 3.0 VDD (V) IDD vs. VDD 0 1.5 1 1.5 3.5 4.0 4.5 3.5 NJG1142KA1 ELECTRICAL CHARACTERISTICS (Low Gain Mode) (Condition : VDD =2.8V, VCTL=0V, Zs=Zl=50ohm, with application circuit) Gain vs. Temperature P-1dB(IN) vs. Tempareture (freq=620MHz) (freq=620MHz) 0 25 P-1dB(IN) (dBm) Gain (dB) -1 -2 -3 20 15 10 -4 -5 -40 -20 0 20 40 60 80 5 -40 100 -20 0 20 60 Tempareture (oC) IIP3, OIP3 vs. Temperature VSWR vs. Temperature (f1=620MHz, f2=f1+100kHz, Pin=-8dBm) 80 100 80 100 (freq=620MHz) 2 30 IIP3 1.8 OIP3 1.6 25 VSWR IIP3, OIP3 (dBm) 40 Temperature (oC) 20 1.4 VSWRi 15 1.2 VSWRo 10 -40 -20 0 20 40 60 80 1 -40 100 -20 0 20 40 60 Temperature (oC) Temperature (oC) IDD vs. Temperature IDD vs. VCTL (RF OFF) (RF OFF) 30 8 7 25 6 IDD (mA) IDD (µ A) 20 15 10 5 4 3 2 0 -40 o +25 C o +60 C o +85 C -40 C -20 C 5 1 -20 0 20 40 60 Temperature (oC) 80 100 0 0.0 0C 0.5 1.0 1.5 2.0 o o o 2.5 3.0 VCTL (V) - 13 - NJG1142KA1 ELECTRICAL CHARACTERISTICS (Low Gain Mode) (Condition :Ta=+25℃, VDD =2.8V, VCTL=0V, Zs=Zl=50ohm,with application circuit) S11, S22 VSWRi, VSWRo - 14 - S21, S12 Zin, Zout NJG1142KA1 ELECTRICAL CHARACTERISTICS (Low Gain Mode) (Condition :Ta=+25℃, VDD =2.8V, VCTL=0V, Zs=Zl=50ohm,With application circuit) S11, S22 (50MHz~20GHz) S21, S12 (50MHz~20GHz) K factor vs. frequency (freq=50MHz~20GHz) 20 o +25 C o +60 C o o +85 C -40 C o -20 C K factor 15 o 0C 10 5 0 0.0 5.0 10 15 20 frequency (GHz) - 15 - NJG1142KA1 APPLICATION CIRCUIT (Top View) C1 330pF RF OUT 4 3 GND RFOUT L1 VDD 270nH 5 GND Bias circuit 6 Logic circuit RF IN 2 C2 1000pF GND VCTL 1 RFIN VCTL 1Pin INDEX NOTES: ・ L1 is an RF choke. (DC feed inductor) ・ C1 is a coupling and DC blocking capacitor at the output. ・ C2 is a bypass capacitor. TEST PCB LAYOUT (Top View) VDD PARTS LIST Parts ID. C2 L1 L1 RF IN C1 RF OUT VCTL 1Pin INDEX C1, C2 Notes TAIYO-YUDEN HK1005 Series MURATA GRM15 Series PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH =0.40mm (Z0=50Ω) PCB SIZE=16.8mm x 16.8mm PRECAUTION: ・ In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC. - 16 - NJG1142KA1 MEASUREMENT BLOCK DIAGRAM ●S parameter Measurements VDD RF IN RF OUT DUT Port 1 Port 2 Network Analyzer S parameter Measurement Block Diagram ●IIP3 Measurements freq.1 VDD 2dB Attenuator RF IN Signal Generator RF OUT Spectrum Analyzer DUT Signal Generator freq.2 Power Comb. 3dB 3dB Attenuator Attenuator 2dB Attenuator IF and IM3 Measurement Block Diagram for IIP3（High Gain Mode） VDD freq.1 Signal Generator 2dB Attenuator 2dB Attenuator RF IN RF Amp. RF OUT Spectrum Analyzer DUT 6dB Attenuator 10dB Attenuator IF and IM3 Measurement Block Diagram for IIP3（Low Gain Mode） - 17 - NJG1142KA1 ● Noise Figure Measurements Measuring instruments NF Analyzer : Agilent 8973A Noise Source : Agilent 346A Setting the NF analyzer Measurement mode form Device under test : Amplifier System downconverter : off Mode setup form Sideband : LSB Averages :8 Average mode : Point Bandwidth : 4MHz Loss comp : off Tcold : setting the temperature of noise source (300.0K) NF Analyzer (Agilent 8973A) Noise Source (Agilent 346A) * Noise source and NF analyzer Input (50 Ω ) Noise Source Drive Output are connected directly. Calibration Setup NF Analyzer (Agilent 8973A) Noise Source (Agilent 346A) * Noise source and DUT, DUT and In DUT out Measurement Setup - 18 - Input (50 Ω ) Noise Source Drive Output NF analyzer are connected directly. NJG1142KA1 PACKAGE OUTLINE (FLP6-A1) 1.6 0.05 0.05 0.13 0.05 0.1 0.5 0.2 0.1 0.5 1.6 0.05 1.2 0.05 0.2 0.1 0.55 0.1 0.22 0.05 Unit: mm Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - 19 -