NJG1127HB6 Data Sheet

NJG1127HB6
800MHz Band LNA GaAs MMIC
! GENERAL DESCRIPTION
The NJG1127HB6 is a LNA IC designed for 800MHz band CDMA2000 cellular
phone. This IC has LNA bypasses function, and high gain mode or low gain
mode can be selected. High IIP3 and a low noise are achieved at the High gain
mode. And low current consumption can be achieved at the low gain mode
because LNA enters the state of the standby. A small and thin package of
USB8-B6 is adopted.
!PACKAGE OUTLINE
NJG1127HB6
! FEATURES
"Low operation voltage
"Low control voltage
+2.8V typ.
+1.85V typ.
[LNA high gain mode]
"High Input IP3
"Low noise figure
+11dBm typ.
1.4dB typ.
@ f=880MHz
@ f=880MHz
[LNA low gain mode]
"Low current consumption
"High Input IP3
15uA typ.
+19dBm typ.
@ f=880MHz
"Small & thin package
USB8-B6 (Package size: 1.5mm x1.5mm x 0.55mm typ.)
! PIN CONFIGURATION
(Top View)
4
3
5
6
Bias
Circuit
2
7
Logic
Circuit
1
Pin Connection
1.VINV
2.GND
3.RF OUT
4.GND
5.RF IN
6.GND
7. VCTL
8. GND
8
1 Pin INDEX
Note: Specifications and description listed in this catalog are subject to change without prior notice.
Ver.2008-12-15
-1-
NJG1127HB6
!ABSOLUTE MAXIMUM RATINGS
(Ta=+25°C, Zs=Zl=50Ω)
PARAMETERS
SYMBOL
CONDITIONS
RATINGS
UNITS
Supply voltage
VDD
5.0
V
Inverter supply voltage
VINV
5.0
V
Control voltage
VCTL
5.0
V
Input power
Pin
+15
dBm
Power dissipation
PD
160
mW
Operating temperature
Topr
-40~+85
°C
Storage temperature
Tstg
-55~+150
°C
on PCB board, Tjmax=150°C
!ELECTRICAL CHARACTERISTICS 1 (DC CHARACTERISTICS)
(General Conditions: VDD=VINV=2.8V, Ta=+25°C, Zs=Zl=50Ω)
PARAMETERS
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Operating voltage
VDD
2.65
2.80
2.95
V
Inverter supply voltage
VINV
2.65
2.80
2.95
V
Control voltage (High)
VCTL(H)
1.80
1.85
VDD+0.3
V
Control voltage (Low)
VCTL(L)
0
0
0.3
V
Operating current1
(LNA High Gain Mode)
Operating current2
(LNA Low Gain Mode)
Inverter current1
(LNA High Gain Mode)
Inverter current2
(LNA Low Gain Mode)
Control current
-2-
IDD1
RF OFF, VCTL=1.85V
-
10.0
16.0
mA
IDD2
RFOFF, VCTL=0V
-
1
5
uA
IINV1
RF OFF, VCTL=1.85V
-
150
240
uA
IINV2
RF OFF, VCTL=0V
-
15
40
uA
ICTL
RF OFF, VCTL=1.85V
-
5
15
uA
NJG1127HB6
!ELECTRICAL CHARACTERISTICS 2 (LNA High Gain Mode)
(General Conditions: VDD=VINV=2.8V, VCTL=1.85V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
PARAMETERS
Small signal gain1
Noise figure1
1dB gain compression
output power1
3rd order Input
Intercept Point1
SYMBOL
CONDITIONS
Gain1
NF1
Exclude PCB & connector losses
(IN: 0.04dB)
P-1dB_1
IIP3_1
f1=fRF, f2=fRF+100kHz,
Pin=-25dBm
MIN
TYP
MAX
UNITS
13.5
15.0
17.0
dB
-
1.4
1.8
dB
+4
+9
-
dBm
+8
+11
-
dBm
RF IN VSWR1
VSWRi _1
-
1.5
2.0
RF OUT VSWR1
VSWRo_1
-
1.5
2.0
!ELECTRICAL CHARACTERISTICS 2 (LNA Low Gain Mode)
(General Conditions: VDD=VINV=2.8V, VCTL=0V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
PARAMETERS
Small signal gain2
Noise figure2
1dB gain compression
output power2
3rd order Input
Intercept Point2
SYMBOL
CONDITIONS
Gain2
NF2
Exclude PCB & connector losses
(IN: 0.04dB)
P-1dB_2
IIP3_2
f1=fRF, f2=fRF+100kHz,
Pin=-12dBm
MIN
TYP
MAX
UNITS
-4.0
-2.5
0
dB
-
2.5
5.0
dB
+1
+8
-
dBm
+15
+19
-
dBm
RF IN VSWR2
VSWRi _2
-
2.3
2.7
RF OUT VSWR2
VSWRo_2
-
1.8
2.1
-3-
NJG1127HB6
!TERMINAL INFOMATION
No.
SYMBOL
DESCRIPTION
1
VINV
Supply voltage terminal for internal logic circuit (inverter). Please place a bypass
capacitor between this and GND for avoiding RF noise from outside.
2
GND
Ground terminal.
RF signal comes out from this terminal, and goes through an external matching circuit
connected to this. Inductor L3 as shown in the application circuit is a part of an external
matching circuit, and also provide DC power to LNA. Capacitor C2 as shown in the
application circuit is a bypass capacitor.
3
RFOUT
4
GND
Ground terminal.
5
RFIN
RF input terminal. The RF signal is input through external matching circuit connected to
this terminal. A DC blocking capacitor is not required.
6
GND
Ground terminal.
7
VCTL
Control port. A logic control signal is required to select High or Low gain mode of LNA.
This terminal is set to more than +1.5V of logical high level for High gain mode of LNA,
and set to 0~+0.3V of logical low level for Low gain mode.
8
GND
Ground terminal.
CAUTION
1) Ground terminal (No.2, 4, 6, 8) should be connected to the ground plane as close as possible for
excellent RF performance, because distance to GND makes parasitic inductance.
! TRUTH TABLE
“H”=VCTL(H), “L”=VCTL(L)
-4-
VCTL
Gain Mode
LNA
L
Low
bypass
H
High
pass
NJG1127HB6
!ELECTRICAL CHARACTERISTICS (LNA High Gain Mode)
(General Conditions: Ta=+25°C, VDD=VINV=2.8V, VCTL=1.85V, Zs=Zl=50Ω, with application circuit)
Pout vs. Pin
Gain, IDD vs. Pin
(f=880M Hz)
(f=880M Hz)
20
16
20
P-1dBout=+9 .2Bm
Gain (dB)
Pout (dBm )
0
Pout
-10
15
14
10
12
10
5
G ain 1dB C om pression Line
ID D (m A)
Gain
10
-20
ID D
P-1dBin= -5.0dBm
-30
-4 0
P-1dBin= -5.0dBm
8
0
-30
-2 0
-10
0
10
-4 0
-30
Pin (dBm)
-10
0
10
Pin (dBm )
P out, IM 3 vs. Pin
OIP3, IIP3 vs. frequency
(f1 =860~9 10M Hz, f2=f1+10 0kHz, Pin=-2 5dBm )
(f1= 880 MH z, f2=f1+1 00k Hz)
40
-20
30
17
29
16
28
15
O IP3 =+2 5.7dBm
Pout
-20
-40
14
27
OIP 3
13
26
12
25
IIP3 (dBm)
0
OIP3 (dBm )
Pout, IM 3 (dBm )
20
IIP3
24
11
23
10
-60
IM 3
IIP3 =+10.4dBm
-80
-30
-2 0
-10
0
10
22
860
20
870
880
890
90 0
9
910
frequency (MHz)
Pin (dBm )
NF, G ain vs. frequency
(f=750 ~10 00M Hz)
4.0
18
3.5
17
16
3.0
2.5
15
2.0
14
13
1.5
Gain (dB)
NF (dB)
Ga in
NF
1.0
12
0.5
11
0.0
750
80 0
850
90 0
950
10
1000
frequency (M Hz)
-5-
NJG1127HB6
!ELECTRICAL CHARACTERISTICS (LNA High Gain Mode)
(General Conditions: Ta=+25°C, VDD=VINV=2.8V, VCTL=1.85V, Zs=Zl=50Ω, with application circuit)
S11, S22
Zin, Zout
VSWR
S21, S12
S11, S22 (~20GHz)
-6-
S21, S12 (~20GHz)
NJG1127HB6
!ELECTRICAL CHARACTERISTICS (LNA High Gain Mode)
(General Conditions: Ta=+25°C, VDD=VINV=2.8V, VCTL=1.85V, Zs=Zl=50Ω, with application circuit)
Gain, NF vs. V DD , V INV
P-1dB(OUT) vs. V DD , V INV
1 3.0
18
3.5
1 2.0
17
3.0
16
2.5
Gain
15
2.0
14
1.5
NF
13
12
11
2.6
2.8
3.0
3.2
3.4
(f=880M Hz)
1 1.0
1 0.0
P -1dB(O UT)
9.0
8.0
1.0
7.0
0.5
6.0
0.0
5.0
2.4
3.6
2.6
OIP3, IIP3 vs. VDD , V INV
3.5
16
3.0
3.0
2.5
2.5
IIP 3
2.0
20
10
18
8
1.0
16
6
0.5
4
0.0
14
3.0
3.2
3.4
(f=8 80M Hz)
3.5
12
22
2.8
3.6
18
14
24
2.6
3.4
4.0
VSWRi
OIP3 (dBm )
OIP3
2.4
3.2
20
IIP3 (dBm)
28
26
3.0
VS W Ri, VSW Ro vs. VDD , V INV
(f1=880M Hz, f2 =f1+ 100kHz, Pin=-2 5dBm )
30
2.8
V DD , V INV (V)
V DD , V INV (V)
4.0
2.0
V SWRi
1.5
3.6
1.5
1.0
VS WRo
0.5
0.0
2.4
V DD , V INV (V)
VSWRo
2.4
P-1dB(OUT) (dBm )
4.0
NF (dB)
Gain (dB)
(f=880M Hz)
19
2.6
2.8
3.0
V DD , V INV
3.2
3.4
3.6
(V)
IDD , IINV vs. V DD , V INV
(RF OFF)
4.0
13
3.5
12
3.0
11
2.5
2.0
10
ID D
9
1.5
8
1.0
7
IINV (m A)
IDD (m A)
14
0.5
I INV
0.0
6
2.4
2.6
2.8
V DD ,
3.0
3.2
3.4
V INV (V)
-7-
NJG1127HB6
!ELECTRICAL CHARACTERISTICS (LNA High Gain Mode)
(General Conditions: Ta=+25°C, VDD=VINV=2.8V, VCTL=1.85V, Zs=Zl=50Ω, with application circuit)
P-1dB(OUT) vs. Tem perature
Gain, NF vs. Tem perature
(f=880M Hz)
18
17
4.0
14
3.5
12
3.0
15
2.5
14
2.0
NF
13
1.5
12
1.0
11
0.5
10
-40
-20
0
20
40
60
80
P-1dB(OUT) (dBm)
16
NF (dB)
Gain (dB)
Gain
(f=880M Hz)
10
P-1dB(O UT)
8
6
4
2
0
-40
0.0
100
-20
0
OIP3, IIP3 vs. Tem perature
(f1=880M Hz, f2=f1+ 100kHz, Pin=-25dBm )
29
20
40
60
80
10 0
Temp erature ( o C)
Temp erature ( o C)
VSW Ri, VSW Ro vs. Tem perature
(f=8 80M Hz)
4.0
12
3.5
11
3.0
27
10
26
9
25
8
OIP 3
IIP3 (dBm )
OIP3 (dBm )
IIP3
VSW Ri, VSW Ro
28
2.5
2.0
V SW Ri
1.5
1.0
7
24
23
-4 0
-20
0
20
40
60
80
Temp erature ( o C)
V S WRo
0.5
0.0
6
10 0
-40
-20
0
IDD vs. Tem perature
40
60
80
10 0
k-factor vs. Tem perature
(RF OFF)
14
20
Temp erature ( o C)
(f=100MHz~20G Hz)
20
12
ID D
15
k-factor
ID D (m A)
10
8
6
10
o
-40 C
o
-30 C
o
-10 C
4
5
o
0 C
o
+25 C
o
+40 C
+85 o C
2
0
-40
0
-20
0
20
40
60
o
Tem p erature ( C)
-8-
80
10 0
0
5
10
frequency (GHz)
15
20
NJG1127HB6
!ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode)
(General Conditions: Ta=+25°C, VDD=VINV=2.8V, VCTL=0V, Zs=Zl=50Ω, with application circuit)
Gain, IDD vs. Pin
P out vs. Pin
20
-2
10
Gain (dB)
P-1dBout=+ 7.8dBm
0
Pout (dBm )
(f=880M Hz)
-1
-10
-20
Pout
2.0
1.8
Gain
-3
1.5
-4
1.3
-5
1.0
-6
0.8
-7
0.5
ID D (u A)
(f=880M Hz)
-30
G ain 1d B C om press ion Line
-8
0.3
P -1dBin=+10.8dBm
P-1dBin=+1 1.5dBm
-50
-4 0
-9
-30
-20
-10
0
10
20
0.0
-40
-3 0
Pin (dBm )
30
20
O IP3=+20.5dBm
Pout
OIP3 (dBm )
Pout, IM 3 (dBm )
-10
0
10
20
OIP3, IIP3 vs. frequency
(f1= 880MH z, f2=f1+1 00k Hz)
-20
-20
Pin (dBm)
Pout, IM 3 vs. Pin
0
ID D
-40
-60
(f1 =860~9 10M Hz, f2=f1 +10 0kHz, Pin=-1 2dBm )
30
28
28
26
26
IIP 3
24
24
22
IIP3 (dBm )
-40
22
OIP 3
IM 3
20
-80
20
IIP3=+23.5dBm
18
-100
-30
-20
-1 0
0
10
20
30
86 0
Pin (dBm )
18
870
880
89 0
900
91 0
frequency (M Hz)
NF, Gain vs. frequency
1
7
0
6
-1
5
Gain
4
-2
-3
3
-4
Gain (dB)
NF (dB)
(f= 750~1000M Hz)
8
NF
2
-5
1
-6
0
750
-7
800
85 0
900
950
1000
frequency (MHz)
-9-
NJG1127HB6
!ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode)
(General Conditions: Ta=+25°C, VDD=VINV=2.8V, VCTL=0V, Zs=Zl=50Ω, with application circuit)
S11, S22
Zin, Zout
VSWR
S21, S12
S11, S22 (~20GHz)
- 10 -
S21, S12 (~20GHz)
NJG1127HB6
!ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode)
(General Conditions: Ta=+25°C, VDD=VINV=2.8V, VCTL=0V, Zs=Zl=50Ω, with application circuit)
G ain, NF vs. V DD , V INV
P-1dB(OUT) vs. V DD , V INV
(f=880M Hz)
0.0
4.0
-0.5
3.5
-1.0
3.0
(f=880M Hz)
11
2.5
-2.0
2.0
-2.5
1.5
NF (dB)
Gain (dB)
NF
-1.5
Gain
-3.0
1.0
-3.5
0.5
P-1dB(O UT) (dBm )
10
9
8
P-1dB(O UT)
7
-4.0
0.0
2.6
2.8
3.0
3.2
3.4
6
2.4
3.6
2.6
V DD , V INV (V)
O IP3, IIP3 vs. VDD , V INV
3.2
3.4
3.6
VS WRi, VSW Ro vs. VDD , V INV
IIP3
4.0
28
3.5
3.5
26
3.0
3.0
30
24
28
22
26
20
24
4.0
V S WRi
2.5
VSW Ri
32
(f=880M Hz)
30
IIP3 (dBm)
34
OIP3 (dBm )
3.0
V DD , V INV (V)
(f1=880M Hz, f2=f1 +10 0kHz, Pin=-12dBm )
36
2.8
2.5
2.0
2.0
1.5
VSW Ro
2.4
1.5
V SWRo
18
1.0
1.0
16
0.5
0.5
14
0.0
OIP3
22
20
2.4
2.6
2.8
V DD ,
3.0
V INV (V)
3.2
3.4
0.0
2.4
2.6
2.8
3.0
V DD , V INV
3.2
3.4
3.6
(V)
IDD , IINV vs. V DD , V INV
(RF OFF)
0.20
20
0.15
15
0.10
10
0.05
5
IINV (uA)
IDD (u A)
I INV
ID D
0.00
0
2.4
2.6
2.8
V DD ,
3.0
V INV (V)
3.2
3.4
- 11 -
NJG1127HB6
!ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode)
(General Conditions: Ta=+25°C, VDD=VINV=2.8V, VCTL=0V, Zs=Zl=50Ω, with application circuit)
P-1dB(O UT) vs. Tem perature
Gain, NF vs. Tem perature
-1
-2
10
14
9
12
8
-3
7
-4
6
-5
5
-6
NF (dB)
Gain (dB)
Gain
4
P-1dB(OUT) (dBm )
(f=880M Hz)
0
(f=880M Hz)
10
8
6
P -1dB(OUT)
4
NF
-7
2
3
-8
-40
-2 0
0
20
40
60
80
Tem p erature ( o C)
0
-40
2
100
OIP3, IIP3 vs. Tem perature
-20
0
20
40
60
Tem perature ( o C)
80
10 0
VSW Ri, VSW Ro vs. Tem perature
(f1=8 80M Hz, f2=f1+10 0kHz, Pin=-12dBm )
28
28
26
26
24
24
(f=880M Hz)
4.0
3.5
IIP3
22
20
22
20
VSW Ri, VSW Ro
OIP 3
IIP3 (dBm )
OIP3 (dBm )
3.0
2.0
1.5
V SW Ro
18
18
16
16
0.5
14
10 0
0.0
14
-40
-20
0
20
40
60
80
VS WRi
2.5
1.0
-40
-20
0
IDD vs. Tem perature
40
60
80
10 0
k-factor vs. Tem perature
(RF OFF)
10
20
Temp erature ( o C)
Tem p erature ( o C)
(f= 100 MHz~20G Hz)
20
8
6
k-factor
ID D (uA)
15
10
4
o
-40 C
-30 o C
o
-10 C
5
o
2
0 C
o
+25 C
o
+40 C
+85 o C
ID D
0
-40
0
-20
0
20
40
o
60
Temp erature ( C)
- 12 -
80
10 0
0
5
10
freque ncy (GHz)
15
20
NJG1127HB6
!APPLICATION CIRCUIT
(Top View)
4
L2
12nH
L3
12nH
3
5
RFIN
C1
1000pF
RFOUT
L4
12nH
L1
39nH
Bias
6
2
Circuit
VDD=2.8V
C2
1000pF
Logic
VCTL=0V or 1.85V
Circuit
7
VINV=2.8V
1
8
1 Pin INDEX
!TEST PCB LAYOUT
(Top View)
Parts List
Parts ID
VDD
L1~L4
RF IN
C2
L4
L1
L2
VCTL
L3
C1
VINV
C1,C2
Notes
TAIYO-YUDEN
(HK1005 series)
MURATA
(GRM15 series)
RF OUT
PCB (FR-4) :
t=0.2mm
MICROSTRIP LINE WIDTH
=0.4mm (Z0=50Ω)
PCB SIZE=17.0mm X 17.0mm
- 13 -
NJG1127HB6
!PACKAGE OUTLINE (USB8-B6)
(TOP VIEW)
(SIDE VIEW)
1pin INDEX
0.038±0.01
0.14±0.05
0.55±0.05
1.5±0.05
0.5±0.1 0.5±0.1
:Au
:FR5
:Epoxy resin
:mm
:4mg
R0.075
0.2±0.1
3
0.3±0.05
8
4
0.2±0.1
TERMINAL TREAT
PCB
Molding material
UNIT
WEIGHT
2
0.3±0.1
1.5±0.05
1
7
6
5
0.2±0.05
0.2±0.05
0.4±0.1
(BOTTOM VIEW)
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this product, please obey the relating law of your country.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to
avoid these damages.
- 14 -
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.