Process： HB10C05-III 0.8umルール 高速ＢｉＣＭＯＳ ■Key Features Bipolar(NPN, Vertical PNP, LPNP ) Maximum Operating Voltage 10V Contact Size 0.8um ft max NPN/ VPNP 8.0GHz / 5.5GHz @ Vce=1V fmax NPN/ VPNP 5.5GHz / 4.0GHz @ Vce=1V CMOS Operating Voltage 5.0V (5.5V Max.) Min. Gate Length 0.8um Capacitor MIM ・ MOS Resistor Poly ・ Base ・ HR NPN Ae=0.8x1.6 ft-Ic (GHz) (GHz) 10 10 8 8 VPNP Ae=0.8x1.6 ft-Ic Vce=3V Vce=3V 6 fT fT 6 Vce=1V 4 4 Vce=1V 2 2 0 0.01 0.1 Ic (mA) 1 0 0.001 0.01 0.1 Ic (mA) 1 Process： HB10C05-IV 完全誘電体分離 高速ＢｉＣＭＯＳ プロセス ■Key Features Bipolar(NPN, Vertical PNP, LPNP ) Maximum Operating Voltage 10V Contact Size 0.8um ft max NPN/ VPNP 8.0GHz / 6.0GHz @ Vce=1V fmax NPN/ VPNP 7.0GHz / 6.0GHz @ Vce=1V No Parasitic Device CMOS Operating Voltage 5.0V (5.5V Max.) Min. Gate Length 0.8um Capacitor MIM ・ MOS Trench_Isolation Resistor Poly ・ Base ・ HR NPN8x1DB SOI (Meas.) 1.2 10 10 Emitter Collector Base SiO2 PNP8x1DB SOI (Meas.) Maximum Oscilation Frequency 1.2 10 1 10 10 10 Maximum Oscilation Frequency 1 10 10 Base 8 10 9 @Vce=3.0V 6 10 9 @Vce=2.0V freq. [ Hz ] 8 10 9 freq. [ Hz ] Base 4 10 9 @Vce=3.0V 6 10 9 @Vce=2.0V 4 10 9 @Vce=1.0V @Vce=1.0V 2 10 9 0 10 -5 2 10 9 10 -4 10 -3 Ic [ A ] 10 -2 0 10 -5 10 -4 10 -3 Ic [ A ] 10 -2