Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High output power: 21.0 dBm typical P1 dB at 2.0 GHz 20.5 dBm typical P1 dB at 4.0 GHz • High gain at 1 dB compression: 14.0 dB typical G1 dB at 2.0 GHz 9.5 dB typical G1 dB at 4.0 GHz Description Agilent’s AT-42036 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42036 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 Ω up to 1 GHz, makes this device easy to use as a low noise amplifier. The AT-42036 bipolar transistor is fabricated using Agilent’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. • Low noise figure: 1.9 dB typical NFO at 2.0 GHz • High gain-bandwidth product: 8.0 GHz typical fT • Cost effective ceramic microstrip package 36 micro-X Package AT-42036 Absolute Maximum Ratings [1] Symbol Parameter Units Absolute Maximum VEBO Emitter-Base Voltage V 1.5 VCBO Collector-Base Voltage V 20 VCEO Collector-Emitter Voltage V 12 IC Collector Current mA 80 PT Power Dissipation [2,3] mW 600 Tj Junction Temperature °C 150 TSTG Storage Temperature [4] °C -65 to 150 Thermal Resistance[2,5]: θ jc = 175°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 5.7 mW/°C for TC > 95°C. 4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of θ jc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications TA = 25°C Symbol Parameters and Test Conditions [1] Frequency Units Min. Typ. |S21E|2 Insertion Power Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz f = 4.0 GHz dB 10.0 11.0 5.0 P1 dB Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 35 mA f = 2.0 GHz f = 4.0 GHz dBm 21.0 20.5 G1 dB 1 dB Compressed Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz f = 4.0 GHz dB 14.0 9.5 NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 2.0 GHz f = 4.0 GHz dB 2.0 3.0 GA Gain @ NFO; VCE = 8 V, IC = 10 mA f = 2.0 GHz f = 4.0 GHz dB 13.5 10.0 fT Gain Bandwidth Product: VCE = 8 V, IC = 35 mA GHz 8.0 hFE Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA — ICBO Collector Cutoff Current; VCB = 8 V µA IEBO Emitter Cutoff Current; VEB = 1 V µA CCB Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz pF Note: 1. For this test, the emitter is grounded. 2 30 150 Max. 270 0.2 2.0 0.28 AT-42036 Typical Performance, TA = 25°C 24 1.0 GHz 12 2.0 GHz 20 4.0 GHz P1dB 16 2.0 GHz 4V P1dB 0 0 10 20 30 40 G1dB 8 4 50 16 G1 dB (dB) 4 4.0 GHz 0 10 20 IC (mA) 30 40 24 35 21 30 18 GA MAG 15 |S21E|2 10 12 4 9 3 6 2 NFO 5 3 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 35 mA. 0 0.5 1 1.0 2.0 3.0 NFO (dB) GAIN (dB) 15 20 12 0 10 20 30 40 50 Figure 3. Output Power and 1 dB Compressed Gain vs. Collector Current and Voltage. f = 2.0 GHz. MSG 25 G1dB IC (mA) Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. 40 10 V 6V 4V 14 10 50 IC (mA) Figure 1. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. GAIN (dB) 6V 16 12 12 4.0 GHz 3 10 V 20 2.0 GHz 8 G1 dB (dB) |S21E|2 GAIN (dB) 16 24 P1 dB (dBm) P1 dB (dBm) 20 0 4.0 5.0 FREQUENCY (GHz) Figure 5. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10 mA. AT-42036 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 10 mA Freq. GHz S11 Mag. S11 Ang. S21 dB S21 Mag. S21 Ang. S12 dB S12 Mag. S12 Ang. S22 Mag. S22 Ang. 0.1 .72 -46 28.3 26.09 152 -37.0 .014 73 .92 -14 0.5 .59 -137 20.9 11.13 102 -31.0 .028 44 .58 -27 1.0 .56 -171 15.4 5.91 80 -28.2 .039 47 .51 -29 1.5 .56 169 12.1 4.03 67 -26.6 .047 52 .50 -33 2.0 .58 155 9.7 3.06 55 -24.2 .062 55 .48 -38 2.5 .59 147 8.0 2.50 48 -22.6 .074 61 .47 -42 3.0 .61 137 6.5 2.10 38 -20.8 .092 65 .46 -51 3.5 .63 128 5.2 1.82 27 -19.6 .105 62 .47 -63 4.0 .63 117 4.0 1.60 17 -18.0 .126 57 .49 -72 4.5 .63 106 3.1 1.43 7 -16.5 .149 53 .51 -80 5.0 .64 93 2.3 1.30 -3 -15.4 .169 48 .52 -87 5.5 .67 79 1.5 1.19 -13 -14.3 .193 41 .51 -94 6.0 .72 70 0.6 1.07 -23 -13.4 .215 35 .46 -105 AT-42036 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 35 mA Freq. GHz S11 Mag. S11 Ang. S21 dB S21 Mag. S21 Ang. S12 dB S12 Mag. S12 Ang. S22 Mag. S22 Ang. 0.1 .50 -88 33.2 45.64 135 -42.0 .008 68 .77 -22 0.5 .52 -164 22.4 13.24 92 -32.8 .023 57 .45 -25 1.0 .53 174 16.6 6.75 76 -28.2 .039 63 .42 -26 1.5 .53 160 13.1 4.55 64 -25.6 .053 66 .41 -30 2.0 .55 148 10.8 3.45 53 -23.2 .069 65 .41 -36 2.5 .57 142 9.0 2.81 47 -21.6 .084 67 .39 -40 3.0 .59 134 7.5 2.37 37 -20.0 .101 64 .38 -49 3.5 .60 125 6.3 2.06 27 -18.4 .120 61 .39 -61 4.0 .60 116 5.2 1.81 17 -17.0 .141 57 .41 -71 4.5 .60 104 4.2 1.62 7 -16.0 .158 50 .43 -78 5.0 .61 92 3.4 1.47 -2 -14.9 .179 45 .44 -84 5.5 .64 79 2.6 1.35 -13 -14.1 .198 37 .43 -91 6.0 .69 70 1.7 1.21 -23 -13.2 .219 30 .38 -102 A model for this device is available in the DEVICE MODELS section. AT-42036 Noise Parameters, VCE = 8 V, IC = 10 mA Freq. GHz NFO dB Γopt Mag Γopt Ang RN /50 0.1 1.0 .04 10 0.13 0.5 1.1 .04 66 0.12 1.0 1.3 .07 150 0.12 2.0 2.0 .20 -178 0.12 4.0 3.0 .51 -110 0.36 4 Part Number Ordering Information Part Number Devices per Reel Reel Size AT-42036-TR1 1000 7” AT-42036-BLK 10 STRIP 36 micro-X Package Dimensions 2.15 (0.085) Device Orientation TOP VIEW SOURCE 2.11 (0.083) DIA. 4 1 420 DRAIN GATE 1 SOURCE 1.45 ± 0.25 (0.057 ± 0.010) 0.56 (0.022) 12 mm 420 0.508 (0.020) 2 2.54 (0.100) 0.15 ± 0.05 (0.006 ± 0.002) Notes: 1. Dimensions are in millimeters (inches) 2. Tolerances: in .xxx = ± 0.005 mm .xx = ± 0.13 Tape Dimensions P0 P2 D0 10 PITCHES CUMULATIVE TOLERANCE ON TAPE ±0.2 MM COVER TAPE E A K C F B T P1 DESCRIPTION 5 420 1 INDICATES PIN 1 ORIENTATION. 4.57 ± 0.25 0.180 ± 0.010 t 420 3 SYMBOL W USER FEED DIRECTION D1 SIZE (mm) SIZE (INCHES) 0.227 ± 0.004 0.240 ± 0.004 0.067 ± 0.004 0.314 ± 0.004 0.059 min. CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A B K P1 D1 5.77 ± 0.10 6.10 ± 0.10 1.70 ± 0.10 8.00 ± 0.10 1.50 min. PERFORATION DIAMETER PITCH POSITION D0 P0 E 1.50 + 0.10/-0.05 0.059 + 0.004/-0.002 4.00 ± 0.10 0.157 ± 0.004 1.75 ± 0.10 0.069 ± 0.004 CARRIER TAPE WIDTH THICKNESS W t 12.00 ± 0.20 0.30 ± 0.05 0.472 ± 0.008 0.012 ± 0.002 COVER TAPE WIDTH TAPE THICKNESS C T 9.30 ± 0.10 0.065 ± 0.010 0.366 ± 0.004 0.0026 ± 0.0004 DISTANCE BETWEEN CENTERLINE CAVITY TO PERFORATION (WIDTH DIRECTION) F 5.50 ± 0.05 0.217 ± 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 ± 0.05 0.079 ± 0.002 www.semiconductor.agilent.com Data subject to change. Copyright © 2001 Agilent Technologies, Inc. Obsoletes 5980-1854E October 31, 2001 5988-4735EN