® ISO 9001 Registered Process C1225 1.2µm BiCMOS Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Symbol VTN γN βN LeffN ∆WN BVDSSN VTFP(N) Minimum 0.45 0.45 60 0.8 P-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Symbol VTP γP βP LeffP ∆WP BVDSSP VTFP(P) Minimum –0.5 Diffusion & Thin Films Base Resistor Sheet Resist. Base Resistor Effective Width Change Base Resistor Voltage Coefficient, Narrow Size Base Resistor Voltage Coefficient, Wide Size Base Resistor Voltage Coefficient, Narrow Size Symbol ρRB ∆WRB Minimum 1.30 –0.2 Capacitance Gate Oxide Metal-1 to Poly-1 Metal-1 to Silicon Metal-2 to Metal-1 © Daily Silver IMP Typical 0.65 0.60 77 1.0 0.6 Maximum 0.85 0.85 95 1.2 Unit V V1/2 µA/V2 µm µm V V Comments 100x1.2µm 100x1.2µm 100x100µm 100x1.2µm Per side Typical –0.7 0.45 28 1.1 0.8 Maximum –0.9 32 1.3 Unit V V1/2 µA/V2 µm µm V V Comments 100x1.2µm 100x1.2µm 100x100µm 100x1.2µm Per side Typical 1.60 –0.6 Maximum 2.00 –1.0 Unit KΩ/o µm Comments 9 10 24 0.9 –9 –10 VOLTCO_N 11297 ppm/V 250x5µm VOLTCO_W 15468 ppm/V 250x25µm TEMPCO_N 2761 ppm/C 250x5µm Unit fF/µm2 fF/µm2 fF/µm2 fF/µm2 Comments Symbol COX CM1P CM1S CMM Minimum 1.34 Typical 1.44 0.046 0.046 0.038 Maximum 1.57 65 Process C1225 Electrical Characteristics NPN Bipolar Transistor Characteristics (Emitter size 4.5 x 4.5µm) Sym Min Typ Current Gain hFE 110 Early Voltage VA 30 Cut - Off Frequency fτ 6.2 Collector-Emitter Saturation Voltage VCESAT 0.9 Collector to Emitter Breakdown Voltage BVCEO 6.0 Collector to Base Breakdown Voltage BVCBO 20 Emitter to Base Breakdown Voltage BVEBO 7.0 Emitter Resistance RE 30 Base Spreading Resistance RB 1000 Collector Saturation Resistance RC 450 Base to Emitter Capacitance CBEO Base to Collector Capacitance CBCO Base to Substrate Capacitance CCS NPN Bipolar Transistor Characteristics (Emitter size 31.5 x 4.5µm) Sym Min Typ Current Gain hFE 100 Early Voltage VA 30 Cut - Off Frequency fτ 6.4 Collector-Emitter Saturation Voltage VCESAT 0.45 Collector to Emitter Breakdown Voltage BVCEO 6.0 Collector to Base Breakdown Voltage BVCBO 20.0 Emitter to Base Breakdown Voltage BVEBO 7.0 Emitter Resistance RE 6 Base Spreading Resistance RB 250 Collector Saturation Resistance RC 65 Physical Characteristics 66 C1225 Max Unit Comments @100µA V GHz V V V V Ω Ω Ω pF pF pF Max Unit V GHz V V V V Ω Ω Ω Comments @100µA Process C1225 Physical Characteristics Starting Material Starting Mat. Resistivity Typ. Operating Voltage Well Type Metal Layers Poly Layers Contact Size Via Size Metal-1 Width/Space Metal-2 Width/space Gate Poly Width/Space p <100> 25 - 50 Ω-cm 5V Twin well 2 1 1.5x1.5µm 1.5x1.5µm 2.5 / 1.5µm 2.5 / 1.5µm 1.5 / 2.0µm N+/P+ Width/Space N+ to P+ Space Contact to Poly Space Contact Overlap of Diffusion Contact Overlap of Poly Metal-1 Overlap of Contact Metal-1 Overlap of Via Metal-2 Overlap of Via Minimum Pad Opening Minimum Pad-to-Pad Spacing Minimum Pad Pitch IC vs VC IB/IC vs VBE -3 -4 IB = 4 µA IC -5 10 IC (mA) IB/IC, Amps IB = 5 µA 475.7 10 10 2.5/1.2µm 9.0µm 1.5µm 1.0µm 1.0µm 1.0µm 1.0µm 1.0µm 65x65µm 5.0µm 80.0µm IB -6 10 IB = 3 µA 47.07 /div IB = 2 µA -7 10 IB = 1 µA -8 10 -9 10 0 .12 .24 .36 VB (V) © Daily Silver IMP .48 .60 0 0 1 2 3 4 5 VC (V) 67 68 C1225