Process C1225 - DS-IMP

®
ISO 9001 Registered
Process C1225
1.2µm
BiCMOS
Electrical Characteristics
T=25oC Unless otherwise noted
N-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VTN
γN
βN
LeffN
∆WN
BVDSSN
VTFP(N)
Minimum
0.45
0.45
60
0.8
P-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VTP
γP
βP
LeffP
∆WP
BVDSSP
VTFP(P)
Minimum
–0.5
Diffusion & Thin Films
Base Resistor Sheet Resist.
Base Resistor Effective
Width Change
Base Resistor Voltage
Coefficient, Narrow Size
Base Resistor Voltage
Coefficient, Wide Size
Base Resistor Voltage
Coefficient, Narrow Size
Symbol
ρRB
∆WRB
Minimum
1.30
–0.2
Capacitance
Gate Oxide
Metal-1 to Poly-1
Metal-1 to Silicon
Metal-2 to Metal-1
© Daily Silver IMP
Typical
0.65
0.60
77
1.0
0.6
Maximum
0.85
0.85
95
1.2
Unit
V
V1/2
µA/V2
µm
µm
V
V
Comments
100x1.2µm
100x1.2µm
100x100µm
100x1.2µm
Per side
Typical
–0.7
0.45
28
1.1
0.8
Maximum
–0.9
32
1.3
Unit
V
V1/2
µA/V2
µm
µm
V
V
Comments
100x1.2µm
100x1.2µm
100x100µm
100x1.2µm
Per side
Typical
1.60
–0.6
Maximum
2.00
–1.0
Unit
KΩ/o
µm
Comments
9
10
24
0.9
–9
–10
VOLTCO_N
11297
ppm/V
250x5µm
VOLTCO_W
15468
ppm/V
250x25µm
TEMPCO_N
2761
ppm/C
250x5µm
Unit
fF/µm2
fF/µm2
fF/µm2
fF/µm2
Comments
Symbol
COX
CM1P
CM1S
CMM
Minimum
1.34
Typical
1.44
0.046
0.046
0.038
Maximum
1.57
65
Process C1225
Electrical Characteristics
NPN Bipolar Transistor Characteristics (Emitter size 4.5 x 4.5µm)
Sym
Min
Typ
Current Gain
hFE
110
Early Voltage
VA
30
Cut - Off Frequency
fτ
6.2
Collector-Emitter Saturation Voltage
VCESAT
0.9
Collector to Emitter Breakdown Voltage
BVCEO
6.0
Collector to Base Breakdown Voltage
BVCBO
20
Emitter to Base Breakdown Voltage
BVEBO
7.0
Emitter Resistance
RE
30
Base Spreading Resistance
RB
1000
Collector Saturation Resistance
RC
450
Base to Emitter Capacitance
CBEO
Base to Collector Capacitance
CBCO
Base to Substrate Capacitance
CCS
NPN Bipolar Transistor Characteristics (Emitter size 31.5 x 4.5µm)
Sym
Min
Typ
Current Gain
hFE
100
Early Voltage
VA
30
Cut - Off Frequency
fτ
6.4
Collector-Emitter Saturation Voltage
VCESAT
0.45
Collector to Emitter Breakdown Voltage
BVCEO
6.0
Collector to Base Breakdown Voltage
BVCBO
20.0
Emitter to Base Breakdown Voltage
BVEBO
7.0
Emitter Resistance
RE
6
Base Spreading Resistance
RB
250
Collector Saturation Resistance
RC
65
Physical Characteristics
66
C1225
Max
Unit
Comments
@100µA
V
GHz
V
V
V
V
Ω
Ω
Ω
pF
pF
pF
Max
Unit
V
GHz
V
V
V
V
Ω
Ω
Ω
Comments
@100µA
Process C1225
Physical Characteristics
Starting Material
Starting Mat. Resistivity
Typ. Operating Voltage
Well Type
Metal Layers
Poly Layers
Contact Size
Via Size
Metal-1 Width/Space
Metal-2 Width/space
Gate Poly Width/Space
p <100>
25 - 50 Ω-cm
5V
Twin well
2
1
1.5x1.5µm
1.5x1.5µm
2.5 / 1.5µm
2.5 / 1.5µm
1.5 / 2.0µm
N+/P+ Width/Space
N+ to P+ Space
Contact to Poly Space
Contact Overlap of Diffusion
Contact Overlap of Poly
Metal-1 Overlap of Contact
Metal-1 Overlap of Via
Metal-2 Overlap of Via
Minimum Pad Opening
Minimum Pad-to-Pad Spacing
Minimum Pad Pitch
IC vs VC
IB/IC vs VBE
-3
-4
IB = 4 µA
IC
-5
10
IC (mA)
IB/IC, Amps
IB = 5 µA
475.7
10
10
2.5/1.2µm
9.0µm
1.5µm
1.0µm
1.0µm
1.0µm
1.0µm
1.0µm
65x65µm
5.0µm
80.0µm
IB
-6
10
IB = 3 µA
47.07
/div
IB = 2 µA
-7
10
IB = 1 µA
-8
10
-9
10
0
.12
.24
.36
VB (V)
© Daily Silver IMP
.48
.60
0
0
1
2
3
4
5
VC (V)
67
68
C1225