To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR N0302P P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The N0302P is a switching device, which can be driven directly by a 4.0 V power source. This N0302P features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. • • • 2.9±0.1 0.85±0.05 0.165±0.05 3 0 to 0.025 2.4±0.1 2±0.1 FEATURES PACKAGE DRAWING (Unit: mm) 4.0 V drive available Low on-state resistance RDS(on)1 = 54 mΩ MAX. (VGS = −10 V, ID = −2.2 A) RDS(on)2 = 77 mΩ MAX. (VGS = −4.5 V, ID = −2.2 A) RDS(on)3 = 150 mΩ MAX. (VGS = −4.0 V, ID = −2.2 A) Built-in gate protection diode 2 0.42±0.05 1 1.9 1: Source 2: Gate 3: Drain ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE N0302P-T1-AT Pure Sn (Tin) Tape 3000 p/reel SOT-23F Marking: XW EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −30 V Gate to Source Voltage (VDS = 0 V) VGSS m20 V ID(DC) m4.4 A ID(pulse) m17.6 A PT1 0.2 W PT2 1.3 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation Total Power Dissipation Note2 Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board of 50 mm × 50 mm × 1.6 mm, copper foil 100%, t ≤ 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D20205EJ1V0DS00 (1st edition) Date Published January 2010 NS Printed in Japan 2010 N0302P ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −30 V, VGS = 0 V −10 μA Gate Leakage Current IGSS VGS = m16 V, VDS = 0 V m10 μA −2.5 V Gate to Source Cut-off Voltage Forward Transfer Admittance VDS = −10 V, ID = −1.0 mA VGS(off) Note Drain to Source On-state ResistanceNote −1.0 | yfs | VDS = −10 V, ID = −2.2 A RDS(on)1 VGS = −10 V, ID = −2.2 A 35 54 mΩ RDS(on)2 VGS = −4.5 V, ID = −2.2 A 50 77 mΩ RDS(on)3 VGS = −4.0 V, ID = −2.2 A 60 150 mΩ 2.0 S Input Capacitance Ciss VDS = −10 V, 620 pF Output Capacitance Coss VGS = 0 V, 130 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 100 pF Turn-on Delay Time td(on) VDD = −15 V, ID = −2.2 A, 8 ns VGS = −10 V, 3 ns RG = 10 Ω 53 ns 26 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = −24 V, 14 nC Gate to Source Charge QGS VGS = −10 V, 2.2 nC QGD ID = −4.4 A 4.4 nC VF(S-D) IF = 4.4 A, VGS = 0 V 0.88 V Reverse Recovery Time Trr IF = 4.4 A, VGS = 0 V, 29 ns Reverse Recovery Charge Qrr di/dt = 50 A/μs 12 nC Gate to Drain Charge Body Diode Forward Voltage Note Note Pulsed TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS (−) RL VGS RG PG. Wave Form 0 VGS 10% PG. VDD 90% τ τ = 1 μs Duty Cycle ≤ 1% 2 90% VDS VDS 10% 0 10% Wave Form td(on) tr ton RL 50 Ω VDD 90% VDS (−) VGS (−) 0 IG = −2 mA td(off) tf toff Data Sheet D20205EJ1V0DS N0302P TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF SAFE OPERATING AREA FORWARD BIAS TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.6 100 80 60 40 20 Mounted on 2500 mm2 x 35 μ m Coper Pad Connected to Drain Electrode, t ≤ 5 sec 1.4 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 1.2 1 0.8 0.6 0.4 0.2 0 0 0 25 50 75 100 125 150 175 0 25 TA - Ambient Temperature - °C 50 75 100 125 150 175 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA -100 PW 11 m 1 110 110 ID(DC) = –4.4 A -1 5s m 1 0 m 1 =3 s 00 s s s -0.1 Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm, copper foil 50 mm x 50 mm, t ≤ 5 sec -0.01 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A -10 TA = 25°C Single Pulse ID(pulse) = –17.6 A μ d it e im V ) ) L 0 n 1 o –1 S( RD GS = (V 1 1000 100 Mounted on 2500 mm2 x 35 μ m Coper Pad Connected to Drain Electrode 10 1 0.1 0.1 m Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D20205EJ1V0DS 3 N0302P DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS -100 -20 -10 –4.5 V -16 –4.0 V ID - Drain Current – A -18 ID - Drain Current - A VDS = –10 V Pulsed VGS = –10 V -14 -12 -10 -8 -6 -4 -1 -0.1 TA = –25°C 25°C 75°C 125°C -0.01 -0.001 -2 Pulsed 0 -0.0001 0 -0.5 -1 -1.5 -2 -2.5 0 -3 -1 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V 10 -2 -1.8 -1.6 -1.4 -1.2 -1 -50 0 50 100 150 TA = –25°C 25°C 75°C 125°C 1 0.1 0.01 -0.01 -0.1 80 VGS = –4.0 V 70 –4.5 V 50 –10 V 40 30 20 -50 0 50 100 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ ID = –2.2 A Pulsed 60 -10 -100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 170 Pulsed 150 130 110 150 90 70 ID = –2.2 A 50 30 10 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate to Source Voltage - V Tch - Channel Temperature - °C 4 -1 ID - Drain Current - A RAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 90 -5 VDS = –10 V Pulsed Tch - Channel Temperature - °C 100 -4 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = –10 V ID = –1 mA -2.2 -3 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -2.4 -2 Data Sheet D20205EJ1V0DS DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT SWITCHING CHARACTERISTICS 150 100 Pulsed VGS = –4.0 V 130 td(on), tr, td(off), tf - Switching Time - ns RDS(on) - Drain to Source On-state Resistance - mΩ N0302P 110 90 –4.5 V 70 50 –10 V 30 10 -0.1 -1 -10 td(off) tf 10 td(on) tr VDD = –15 V VGS = –10 V RG = 10 Ω 1 -0.1 -100 -1 ID - Drain Current - A -100 ID - Drain Current - A APACITANCE vs. DRAIN TO SOURCE VOLTAGE SOURCE TO DRAIN DIODE FORWARD VOLTAGE -100 1000 Pulsed Ciss 100 Coss Crss IF - Diode Forward Current - A Ciss, Coss, Crss - Capacitance - pF -10 -10 -1 VGS = 0 V -0.1 VGS = 0 V f = 1 MHz 10 -0.01 -0.1 -1 -10 -100 -0.01 0.0 VDS - Drain to Source Voltage - V 0.5 1.0 1.5 VF(S-D) - Source to Drain Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS VGS - Gate to Source Voltage - V -10 -9 -8 -7 ID = –4.4 A VDD = –24 V –15 V –6 V -6 -5 -4 -3 -2 -1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 QG - Gate Change - nC Data Sheet D20205EJ1V0DS 5 N0302P • The information in this document is current as of January, 2010. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti- "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and crime systems, safety equipment and medical equipment (not specifically designed for life support). medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note 1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). (M8E0909E)