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DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2770GR SWITCHING DUAL P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The μ PA2770GR is Dual P-Channel MOS Field Effect Transistors designed for Motor Drive application. 8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 FEATURES • Low on-state resistance RDS(on)1 = 26 mΩ MAX. (VGS = –10 V, ID = –3.5 A) RDS(on)2 = 35 mΩ MAX. (VGS = –4.5 V, ID = –3.5 A) • Low input capacitance Ciss = 2200 pF TYP. • Built-in gate protection diode • Small and surface mount package (Power SOP8) 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 PARAMETER SYMBOL RATINGS UNIT VDSS −40 V Gate to Source Voltage (VDS = 0 V) VGSS m20 V Drain Current (DC) ID(DC) m7 A ID(pulse) m28 A PT 1.7 W Drain to Source Voltage (VGS = 0 V) Drain Current (pulse) Note 1 Total Power Dissipation (1 unit) Note 2 6.0 ±0.3 4 4.4 0.8 +0.10 –0.05 5.37 Max. 0.15 0.05 Min. ABSOLUTE MAXIMUM RATINGS (TA = 25°C All terminals are connected.) 1.44 1.8 Max. 1 1.27 0.40 0.5 ±0.2 0.10 0.78 Max. +0.10 –0.05 0.12 M Total Power Dissipation (2 units) Note 2 PT 2.0 W Channel Temperature Tch 150 °C EQUIVALENT CIRCUIT Storage Temperature Tstg −55 to +150 °C (1/2 circuit) Single Avalanche Current Note 3 IAS −7 A Single Avalanche Energy Note 3 EAS 4.9 mJ Drain Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Mounted on ceramic substrate of 2000 mm2 x 1.6 mm 3. Starting Tch = 25°C, VDD = −20 V x VDSS, RG = 25 Ω, L = 100 μH, VGS = −20 V → 0 V ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE Pure Sn Tape 2500 p/reel Power SOP8 μ PA2770GR-E1-AY Note μ PA2770GR-E2-AY Note Body Diode Gate Gate Protection Diode Source Note Pb-free (This product does not contain Pb in the external electrode.) Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G19864EJ1V0DS00 (1st edition) Date Published July 2009 NS Printed in Japan 2009 μ PA2770GR ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −40 V, VGS = 0 V −10 μA Gate Leakage Current IGSS VGS = m20 V, VDS = 0 V m10 μA VGS(off) VDS = −10 V, ID = −1 mA −1.0 −1.6 −2.5 V | yfs | VDS = −10 V, ID = −3.5 A 5 11 Drain to Source On-state Resistance Note RDS(on)1 VGS = −10 V, ID = −3.5 A 21 26 mΩ Note RDS(on)2 VGS = −4.5 V, ID = −3.5 A 24 35 mΩ Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance S Input Capacitance Ciss VDS = −10 V 2200 pF Output Capacitance Coss VGS = 0 V 350 pF Reverse Transfer Capacitance Crss f = 1 MHz 260 pF Turn-on Delay Time td(on) VDD = −20 V, ID = −3.5 A 11 ns VGS = −10 V 27 ns RG = 10 Ω 160 ns 88 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG ID = −7 A 45 nC Gate to Source Charge QGS VDD = −32 V 5.2 nC Gate to Drain Charge QGD VGS = −10 V 12 nC Body Diode Forward Voltage Note VF(S-D) IF = 7 A, VGS = 0 V 0.84 1.5 V Reverse Recovery Time trr IF = −7 A, VGS = 0 V 54 ns Reverse Recovery Charge Qrr di/dt = −50 A/μs 25 nC Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω D.U.T. L RL 50 Ω PG. VGS = −20 → 0 V VDD RG PG. VGS(−) VGS Wave Form 0 VGS 10% 90% VDD VDS(−) − IAS BVDSS VDS ID VGS(−) 0 VDS Wave Form τ VDD Starting Tch τ = 1 μs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. PG. 2 IG = −2 mA RL 50 Ω VDD Data Sheet G19864EJ1V0DS VDS 90% 90% 10% 10% 0 td(on) tr td(off) ton tf toff μ PA2770GR TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.5 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 0 2 units 2 1 unit 1.5 1 0.5 0 0 25 50 75 100 125 150 0 175 25 TA - Ambient Temperature - °C 50 75 100 125 150 175 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA -100 ID(pulse) -10 S( -1 -0.1 ) ON PW d it e ) Lim 10 V 1 = ID(DC) S RD V G t (a 110 DC Po we rD 110 i ss ip m 0 m at io = 11 m 1 1 1 TA = 25°C mounted on ceramic substrate s s s nL im it e d of 2000 mm2 × 1.6 mm -0.01 -0.01 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000.0 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A -1000 Single pulse Mounted on ceramic substrate of 2000 mm2 × 1.6 mm 100.0 Rth(ch-A) = 73.5 °C/W Rth(ch-A) = 62.5 °C/W 10.0 1.0 Rth(ch-A) (1 unit) Rth(ch-A) (2 units) 0.1 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G19864EJ1V0DS 3 μ PA2770GR FORWARD TRANSFER CHARACTERISTICS -50 -100 -40 -10 −10 V -30 ID - Drain Current - A ID - Drain Current - A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = −4.5 V -20 -10 Tch = −55°C −25°C 25°C -1 75°C 125°C 150°C -0.1 -0.01 VDS = −10 V Pulsed Pulsed -0 -0.001 -0 -0.5 -1 -1.5 0 -1 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V -2 -1.5 -1 -0.5 -0 0 20 40 60 80 100 Tch = −55°C −25°C 25°C 75°C 125°C 150°C 10 1 -0.1 30 25 ID = −3.5 A 20 Pulsed 15 -15 -20 35 -10 -100 Pulsed 30 VGS = −4.5 V 25 −10 V 20 15 10 VGS - Gate to Source Voltage - V 4 -1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 35 -10 VDS = −10 V Pulsed ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT -5 -5 100 Tch - Channel Temperature - °C -0 -4 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = −10 V ID = −1 mA -2.5 -3 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -3 -2 -1 -10 ID - Drain Current - A Data Sheet G19864EJ1V0DS -100 μ PA2770GR CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 50 45 40 35 VGS = −4.5 V 25 20 −10 V 15 10 ID = −3.5 A Pulsed 5 0 0 20 40 60 80 Ciss 1000 100 -0.1 100 -1 Tch - Channel Temperature - °C VDS - Drain to Source Voltage - V -40 td(off ) 100 tf tr 10 td(on) VDD = −20 V VGS = −10 V RG = 10 Ω 1 -0.1 -100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 td(on), tr, td(off), tf - Switching Time - ns -10 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS ID = −7 A -35 VDD = −32 V −20 V −8 V -30 -25 -10 -14 -10 -8 -15 -6 VGS -10 -4 VDS -5 -2 -0 -1 -16 -12 -20 0 0 10 ID - Drain Current - A 20 30 40 50 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 1000 trr - Reverse Recovery Time - ns IF - Diode Forward Current - A Coss Crss VGS = 0 V f = 1 MHz VGS - Gate to Source Voltage - V 30 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 −10 V 10 VGS = −4.5 0V 1 0.1 100 10 di/dt = −50 A/μs VGS = 0 V Pulsed 0.01 1 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V -1 -10 -100 IF - Diode Forward Current - A Data Sheet G19864EJ1V0DS 5 μ PA2770GR SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD VDD = −20 V RG = 25 Ω VGS = −20 → 0 V Starting Tch = 25°C -10 IAS = 7 A EAS = 4.9 mJ -1 0.00001 100 Energy Derating Factor - % IAS - Single Avalanche Current - A -100 SINGLE AVALANCHE ENERGY DERATING FACTOR 80 60 40 20 0 0.0001 0.001 0.01 L - Inductive Load - mH 6 VDD = −20 V RG = 25 Ω VGS = −20 → 0 V Starting Tch = 25°C 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C Data Sheet G19864EJ1V0DS μ PA2770GR • The information in this document is current as of July, 2009. 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