RENESAS 2SK4147

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4147
SWITCHING
N-CHANNEL MOSFET
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The 2SK4147 is a switching element that is most suitable for use
in DC-DC converter whose DC input voltage is 24 to 48 V.
Having low on-resistance, excelling in the switching characteristics,
and providing the small surface mounting outline, the 2SK4147 is
ideal for use in high-speed switching of the devices on which
space-saving and automation of mounting are promoted.
0.16
+0.1
–0.06
FEATURES
3
1.5
2.8 ±0.2
+0.1
0.65 –0.15
0.4 +0.1
–0.05
0 to 0.1
1
• Low input capacitance
Ciss = 120 pF TYP.
• Low on-state resistance
RDS(on)1 = 4.5 Ω MAX. (VGS = 10 V, ID = 0.25 A)
RDS(on)2 = 5.2 Ω MAX. (VGS = 4.5 V, ID = 0.25 A)
RDS(on)3 = 6.0 Ω MAX. (VGS = 4 V, ID = 0.25 A)
• 4.5 V drive available
• Small and surface mount package (SC-96)
2
0.95
0.65
0.95
1.9
0.9 to 1.1
2.9 ±0.2
1. Gate
2. Source
3. Drain
ORDERING INFORMATION
PART NUMBER
2SK4147-T1B-AT
Note
2SK4147-T2B-AT
Note
LEAD PLATING
PACKING
Pure Sn (Tin)
Tape 3000 p/reel
PACKAGE
SC-96 (Mini Mold Thin Type)
0.011 g TYP.
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
Marking: XR
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TA = 25°C)
Note1
Drain Current (pulse)
Total Power Dissipation (TA = 25°C)
Note2
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
EQUIVALENT CIRCUIT
250
±20
±0.5
±2.0
0.2
1.25
150
−55 to +150
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm, t ≤ 5 sec
V
V
A
A
W
W
°C
°C
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18741EJ1V0DS00 (1st edition)
Date Published April 2007 NS CP(K)
Printed in Japan
2007
2SK4147
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 250 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
μA
VGS(off)
VDS = 10 V, ID = 1 mA
1.0
2.5
V
| yfs |
VDS = 10 V, ID = 0.25 A
0.55
RDS(on)1
VGS = 10 V, ID = 0.25 A
3.6
4.5
Ω
RDS(on)2
VGS = 4.5 V, ID = 0.25 A
3.6
5.2
Ω
RDS(on)3
VGS = 4 V, ID = 0.25 A
3.6
6.0
Ω
Input Capacitance
Ciss
VDS = 10 V,
120
pF
Output Capacitance
Coss
VGS = 0 V,
18
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
7
pF
Turn-on Delay Time
td(on)
VDD = 125 V, ID = 0.25 A,
5.5
ns
Rise Time
tr
VGS = 10 V,
6
ns
Turn-off Delay Time
td(off)
RG = 10 Ω
16.5
ns
Fall Time
tf
32
ns
Total Gate Charge
QG
VDD = 200 V,
5.5
nC
Gate to Source Charge
QGS
VGS = 10 V,
1
nC
QGD
ID = 0.5 A
2
nC
VF(S-D)
IF = 0.5 A, VGS = 0 V
0.84
Reverse Recovery Time
trr
IF = 0.5 A, VGS = 0 V,
55
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/μs
54
nC
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
Gate to Drain Charge
Body Diode Forward Voltage
Note
1.9
S
1.5
V
Note Pulsed
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
VGS
RL
VGS
RG
PG.
Wave Form
VDD
0
VGS
10%
PG.
90%
τ
τ = 1 μs
Duty Cycle ≤ 1%
2
90%
VDS
VDS
0
10%
10%
tr
td(off)
Wave Form
td(on)
ton
RL
50 Ω
VDD
90%
VDS
VGS
0
IG = 2 mA
tf
toff
Data Sheet D18741EJ1V0DS
2SK4147
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
120
1.4
PT − Total Power Dissipation − W
dT − Percentage of Rated Power − %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
1.2
1
0.8
0.6
0.4
Mounted on FR-4 board of
50 mm x 50 mm x 1.6 mm,
t ≤ 5 sec
0.2
0
0
0
25
50
75
100
125
150
175
0
25
TA − Ambient Temperature − °C
50
75
100
125
150
175
TA − Ambient Temperature − °C
FORWARD BIAS SAFE OPERATING AREA
10
1
PW
=
1i 0
1i
ID(DC)
0
μs
i
m
s
i
m
s
io
at
G
p
si
o
S(
n
d
it e
m
Li
(V
1i 0
D
d
it e
m
Li V )
1i 0
=
S
is
R
n)
D
er
0.1
w
Po
0.01
(5
s)
Single Pulse
Mounted on FR-4 board of
50 mm x 50 mm x 1.6 mm
0.001
0.1
1
10
100
1000
VDS − Drain to Source Voltage − V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(ch-A) − Transient Thermal Resistance − °C/W
ID − Drain Current − A
ID(pulse)
1000
Without board
100
Mounted on FR-4 board of
50 mm x 50 mm x 1.6 mm
10
1
Single Pulse
0.1
100 μ
1m
10 m
100 m
1
PW − Pulse Width − s
Data Sheet D18741EJ1V0DS
10
100
1000
3
2SK4147
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
2
10
VDS = 10 V
Pulsed
1
ID - Drain Current - A
ID − Drain Current − A
Pulsed
VGS = 10 V
1
4.5 V
0
0.1
Tch = −55°C
−25°C
25°C
75°C
125°C
150°C
0.01
0.001
0.0001
0
2
4
6
8
10
0
5
VDS − Drain to Source Voltage − V
VGS − Gate to Source Voltage − V
4
VDS = 10 V
ID = 1 mA
3
2
1
0
-25
25
75
125
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
| yfs | − Forward Transfer Admittance − S
VGS(off) – Gate to Source Cut-off Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
-75
Tch = −55°C
−25°C
25°C
1
75°C
125°C
150°C
0.1
0.01
175
5
10 V
2
1
Pulsed
0
0.001
0.01
0.1
1
10
ID − Drain Current − A
4
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) − Drain to Source On-state Resistance − Ω
RDS(on) − Drain to Source On-state Resistance − Ω
6
3
1
ID − Drain Current − A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
VGS = 4.5 V
VDS = 10 V
Pulsed
0.1
Tch − Channel Temperature − °C
4
10
10
8
6
ID = 0.5 A
4
0.25 A
2
Pulsed
0
0
2
4
6
8
VGS − Gate to Source Voltage − V
Data Sheet D18741EJ1V0DS
10
2SK4147
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
8
ID = 0.25 A
Pulsed
Ciss, Coss, Crss − Capacitance − pF
VGS = 4.5 V
6
10 V
4
2
0
-75
Ciss
100
Coss
10
VGS = 0 V
f = 1 MHz
1
-25
25
75
125
175
0.1
Tch − Channel Temperature − °C
10
100
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
240
100
VDD = 125 V
VGS = 10 V
RG = 10 Ω
tf
VDS − Drain to Source Voltage − V
td(on), tr, td(off), tf − Switching Time − ns
1
VDS − Drain to Source Voltage − V
SWITCHING CHARACTERISTICS
td(off)
10
tr
td(on)
12
VDD = 200 V
125 V
50 V
200
160
10
8
6
120
VGS
80
40
1
4
2
VDS
ID = 0.5 A
0
0.1
1
10
0
0
1
2
3
4
5
ID − Drain Current − A
QG − Gate Charge − nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
6
1000
10
1
VGS = 10 V
0.1
0V
0.01
Pulsed
0.001
trr − Reverse Recovery Time − ns
100
IF − Diode Forward Current − A
Crss
di/dt = 100 A/μs
VGS = 0 V
100
10
0
0.2
0.4
0.6
0.8
1
1.2
VF(S-D) − Source to Drain Voltage − V
0.1
1
10
IF − Diode Forward Current − A
Data Sheet D18741EJ1V0DS
5
VGS − Gate to Source Voltage − V
RDS(on) − Drain to Source On-state Resistance − Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
2SK4147
• The information in this document is current as of April, 2007. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1