Preliminary Datasheet RJK4006DPP-M0 Silicon N Channel MOS FET High Speed Power Switching R07DS0228EJ0100 Rev.1.00 Dec 14, 2010 Features Low on-resistance RDS(on) = 0.69 typ. (ID = 4 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D 1. Gate 2. Drain 3. Source G 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. Symbol VDSS VGSS IDNote4 ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Note2 Pch ch-c Tch Tstg Ratings 400 30 8 24 8 24 8 8.5 Unit V V A A A A A mJ 29 4.31 150 –55 to +150 W C/W C C PW 10 s, duty cycle 1% Value at Tc = 25C STch = 25C, Tch 150C Limited by maximum safe operation area R07DS0228EJ0100 Rev.1.00 Dec 14, 2010 Page 1 of 6 RJK4006DPP-M0 Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Min 400 — — 3.0 — Typ — — — — 0.69 Max — 1 ±0.1 4.5 0.80 Unit V A A V Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF — — — — — — — — — — — 620 80 11 30 30 60 20 20 4 9 0.9 — — — — — — — — — — 1.5 pF pF pF ns ns ns ns nC nC nC V trr — 230 — ns Test conditions ID = 10 mA, VGS = 0 VDS = 400 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 4 A, VGS = 10 V Note5 VDS = 25 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 50 Rg = 10 VDD = 320 V VGS = 10 V ID = 8 A IF = 8 A, VGS = 0 Note5 IF = 8 A, VGS = 0 diF/dt = 100 A/s Notes: 5. Pulse test R07DS0228EJ0100 Rev.1.00 Dec 14, 2010 Page 2 of 6 RJK4006DPP-M0 Preliminary Main Characteristics Typical Output Characteristics Maximum Safe Operation Area 20 10 Ta = 25°C Pulse Test μs ID (A) 10 PW = ID (A) 100 Drain Current μs Drain Current 0 Operation in this area is limited by RDS(on) 0.1 Tc = 25°C 1 shot 0.01 0.1 1 Drain to Source Voltage Drain to Source on State Resistance RDS(on) (Ω) Drain Current 75°C 8 4 0 4 6 8 Static Drain to Source on State Resistance RDS(on) (Ω) Gate to Source Voltage 5.2 V 5V 4 VGS = 4.8 V 8 12 16 20 VDS (V) 10 VGS = 10 V Ta = 25°C Pulse Test 1 0.1 10 1 2 5 Drain Current VGS (V) 10 20 ID (A) Body-Drain Diode Reverse Recovery Time (Typical) Static Drain to Source on State Resistance vs. Temperature (Typical) 1000 2.0 VGS = 10 V Pulse Test 1.6 2A ID = 4 A 1.2 1A 0.8 0.4 0 −25 4 Drain to Source Voltage 0 25 50 75 Case Temperature R07DS0228EJ0100 Rev.1.00 Dec 14, 2010 100 125 150 Tc (°C) Reverse Recovery Time trr (ns) ID (A) Tc = −25°C 25°C 2 8 Static Drain to Source on State Resistance vs. Drain Current (Typical) 12 0 5.4 V VDS (V) 20 16 5.6 V 0 Typical Transfer Characteristics VDS = 10 V Pulse Test 5.8 V 7V 6V 0 1000 100 10 10 V 9V 12 10 1 16 100 di / dt = 100 A / μs VGS = 0, Ta = 25°C 10 0.1 1 10 Reverse Drain Current 100 IDR (A) Page 3 of 6 RJK4006DPP-M0 Preliminary Typical Capacitance vs. Drain to Source Voltage Ciss 100 Coss 10 Crss VGS = 0 f = 1 MHz Tc = 25°C 1 0 50 100 150 200 Drain to Source Voltage 250 800 600 400 200 VDS (V) VDS 8 4 VDD = 320 V 200 V 100 V 8 16 24 32 40 Qg (nC) Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 5 Gate to Source Cutoff Voltage VGS(off) (V) IDR (A) 12 VDD = 100 V 200 V 320 V Gate Charge 20 Reverse Drain Current 16 0 0 Reverse Drain Current vs. Source to Drain Voltage (Typical) 16 12 8 VGS = 0 Ta = 25°C Pulse Test 4 0 VGS ID = 8 A Ta = 25°C Gate to Source Voltage VDS (V) 1000 Drain to Source Voltage Capacitance C (pF) 10000 VGS (V) Dynamic Input Characteristics (Typical) 0.4 0.8 1.2 Source to Drain Voltage R07DS0228EJ0100 Rev.1.00 Dec 14, 2010 1.6 2.0 VSD (V) 4 3 ID = 10 mA 2 1 mA 0.1 mA 1 VDS = 10 V 0 -25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) Page 4 of 6 RJK4006DPP-M0 Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.03 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 4.31°C/W, Tc = 25°C 0.05 0.02 0.01 0.01 10 μ 1s PDM t ho pu D= PW T PW T lse 100 μ 1m 10 m Pulse Width 100 m 1 10 PW (s) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL 10 Ω Vin 10 V Vin Vout 10% 10% 10% VDD = 200 V 90% td(on) R07DS0228EJ0100 Rev.1.00 Dec 14, 2010 tr 90% td(off) tf Page 5 of 6 RJK4006DPP-M0 Preliminary Package Dimension Package Name TO-220FL JEITA Package Code ⎯ Previous Code TO-220FL RENESAS Code PRSS0003AF-A Unit: mm 6.5 ± 0.3 3.0 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 12.5 ± 0.5 15.0 ± 0.3 10.0 ± 0.3 MASS[Typ.] 1.5g 1.15 ± 0.2 1.15 ± 0.2 0.75 ± 0.15 0.40 ± 0.15 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 2.54 ± 0.25 Ordering Information Orderable Part Number RJK4006DPP-M0-T2 R07DS0228EJ0100 Rev.1.00 Dec 14, 2010 Quantity 1050 pcs Shipping Container Box (Tube) Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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