LR301 - Polyfet

polyfet rf devices
LR301
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
SILICON GATE ENHANCEMENT MODE
RF POWER LDMOS TRANSISTOR
300.0 Watts Push - Pull
Package Style LR
"Polyfet"TM process
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT
features
low feedback and output capacitances,
resulting in high Ft transistors with high
input impedance and high efficiency.
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total
Device
Dissipation
465 Watts
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
o
0.38 C/W
o
200 C
DC Drain
Current
Storage
Temperature
o
o
-65 C to 150 C
28.0 A
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
70 V
70 V
20 V
RF CHARACTERISTICS ( 300.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN
Gps
Common Source Power Gain
η
Drain Efficiency
VSWR
TYP
MAX
13
50
Load Mismatch Tolerance
10:1
UNITS TEST CONDITIONS
dB
Idq = 0.80 A, Vds =
28.0 V, F = 350 MHz
%
Idq = 0.80 A, Vds =
28.0 V, F = 350 MHz
Relative
Idq = 0.80 A, Vds = 28.0 V, F =
350 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN
TYP
MAX
UNITS TEST CONDITIONS
V
Bvdss
Drain Breakdown Voltage
Idss
Zero Bias Drain Current
1.0
mA
Vds = 28.0 V, Vgs = 0V
Igss
Gate Leakage Current
1
uA
Vds = 0V Vgs = 30V
Vgs
Gate Bias for Drain Current
5
V
gM
Forward Transconductance
65
2
Ids = 50.00 mA, Vgs = 0V
Ids = 0.30 A, Vgs = Vds
7.2
Mho
Vds = 10V, Vgs = 5V
0.15
Ohm
Vgs = 20V, Ids =16.00 A
Vgs = 20V, Vds = 10V
Rdson
Saturation Resistance
Idsat
Saturation Current
50.00
Amp
Ciss
Common Source Input Capacitance
200.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
10.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitance
135.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
LR301
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
LR301 Freq=352MHz, Vds=28Vdc, Idq=0.8A
L3B 1 DIE CAPACITANCE
1000
15
350
14.5
300
14
Coss
CAPACITANCE IN PFS
400
100
Pout
250
13.5
200
13
150
12.5
Gain
100
12
50
0
10
15
Pin in W a tts
Crss
1
11
5
10
11.5
Efficiency@315W = 67%
0
Ciss
20
0
25
4
8
IV CURVE
16
20
24
28
ID & GM VS VGS
L3B 1 DIE ID & GM Vs VG
L3B 1 DIE IV
100.00
45
Id in amps; Gm in mhos
40
35
Id
10.00
30
ID IN AMPS
12
VDS IN VOLTS
25
20
15
10
gM
1.00
5
0.10
0
0
2
vg=2v
4
6
Vg=4v
8
10
12
14
VDS IN VOLTS vg=8v
Vg=6v
16
0
18
20
0
2
vg=12v
Zin Zout
4
6
8
10
Vgs in Volts
12
14
16
18
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
POLYFET RF DEVICES
.XXX +/-.005 inches
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com