TIG074E8 N-Channel IGBT 400V, 150A, VCE(sat)

Ordering number : ENA2209
TIG074E8
N-Channel IGBT
http://onsemi.com
400V, 150A, VCE(sat); 3.8V Single ECH8
Features
•
•
•
•
Low-saturation voltage
Enhansment type
Mounting Height 0.9mm, Mounting Area 8.12mm2
Halogen free compliance
Low voltage drive (2.5V)
Built-in Gate to Emitter protection diode
dv / dt guarantee*
•
•
•
Application
•
Light-Controlling Flash Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage (DC)
Gate to Emitter Voltage (Pulse)
Symbol
Maximum Collector to Emitter dv / dt
VGES
ICP
dv / dt
Channel Temperature
Tj
Storage Temperature
Tstg
Collector Current (Pulse)
Conditions
P-channel
VCES
VGES
PW≤1ms
VGE=2.5V, CM=200μF
Turn off Ic=150A, VCE≤320V, starting Tch=25°C
Unit
400
V
±4
V
±5
V
150
A
400
V / μs
150
°C
-40 to +150
°C
* : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), will be 100% screen-detected in the circuit shown as Fig. 1.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Collector to Emitter Breakdown Voltage
Collector to Emitter Cutoff Current
Gate to Emitter Leakage Current
Gate to Emitter Threshold Voltage
Collector to Emitter Saturation Voltage
Symbol
V(BR)CES
ICES
IGES
VGE(off)
Conditions
IC=2mA, VGE=0V
Ratings
min
typ
max
400
V
VCE=320V, VGE=0V
VGE=±4V, VCE=0V
VCE=10V, IC=1mA
IC=100A, VGE=2.5V
Input Capacitance
VCE(sat)
Cies
Output Capacitance
Coes
VCE=10V, f=1MHz
Reverse Transfer Capacitance
Cres
Unit
0.4
3.8
10
μA
±10
μA
0.9
V
5.4
V
3100
pF
32
pF
24
pF
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
Semiconductor Components Industries, LLC, 2013
September, 2013
91813 TKIM TC-00003013 No. A2209-1/6
TIG074E8
100
1.8V
75
50
4
5
6
7
8
9
VCE -- VGE
7
6
5
130A
4
100A
3
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Gate to Emitter Voltage, VGE -- V
7
6
IC=150A
130A
5
100A
4
3
2
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Gate to Emitter Voltage, VGE -- V
0.8
0.6
0.5
0.4
0.3
0.2
0.1
0
--50
--25
0
25
50
75
100
Case Temperature, Tc -- °C
C
7
6
5
IC=150A
130A
4
100A
3
1.5
2.0
125
150
IT15160
2.5
3.0
3.5
4.0
4.5
VCE(sat) -- Tc
5.0
IT15157
9
8
7
0A
13
6
0A
10
5
4
3
2
--50
--25
0
25
50
75
100
125
Case Temperature, Tc -- °C
IT15158
0.7
4.0
IT15155
VGE=2.5V
5.0
VCE=10V
IC=1mA
3.5
8
10
VGE(off) -- Tc
0.9
3.0
Gate to Emitter Voltage, VGE -- V
Tc= 75°C
8
2.5
Tc=25°C
2
1.0
5.0
9
2.0
9
IT15156
VCE -- VGE
10
1.5
VCE -- VGE
10
Collector to Emitter Voltage, VCE -- V
8
1.0
Gate to Emitter Voltage, VGE -- V
Tc= --25°C
IC=150A
0.5
0
IT15154
9
2
1.0
0
10
A
3
Collector to Emitter
Saturation Voltage, VCE(sat) -- V
Collector to Emitter Voltage, VCE -- V
50
50
2
10
Collector to Emitter Voltage, VCE -- V
75
IC
=1
1
180
Collector Current (Pulse), ICP -- A
0
Collector to Emitter Voltage, VCE -- V
Gate to Emitter Cutoff Voltage, VGE(off) -- V
100
25
25
0
Tc=
Collector Current, IC -- A
0V
125
25°
C
V
--25
°
3.0
V
VCE=10V
2.5
V
GE =
4.
Collector Current, IC -- A
125
IC -- VGE
150
Tc=25°C
75 °
C
IC -- VCE
150
160
150
IT15159
ICP -- VGE
VCE=320V
CM=100μF
Tc=25°C
140
Tc=70°C
120
100
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Gate to Emitter Voltage, VGE -- V
5.0
5.5
IT15165
No. A2209-2/6
TIG074E8
CM -- ICP
450
VGE=2.5V
VCE=320V
Main Capacitance, CM -- μF
400
350
Tc=70°C
300
Tc=25°C
250
200
150
100
50
0
0
20
40
60
80
100
120
Collector Current (Pulse), ICP -- A
140
160
IT17156
Fig.1 Large Current R Load Switching Circuit
RL
CM
+
VCC
RG
TIG074E8
VGE
100kΩ
Note1. The collector voltage gradient dv / dt - Turn off Ic safety movement domain to protect the device
of Gate-series resistor RG when it is turned off.
No. A2209-3/6
TIG074E8
Definition of dv/dt
dv/dt is defined as the maximum slope of the below VCE curve during turn-off period.
dv/dt=ΔVCE/Δt=ΔVCE/100ns
Overall waveform
Enlarged picture of turn-off period
Turn-off period
V,I
VCE
Turn off VCE
Δt=100ns
IC
ICP
ΔVCE
Turn off IC
IC
t
VCE
IT15323
Definition of Switching Time
VGE
VGE:90%
VGE:10%
t
VCE
VCE:90%
VCE:10%
VCE:10%
t
IC
td(on)
tr
td(off)
IC:90%
IC:10%
t
tf
IT15324
No. A2209-4/6
TIG074E8
Package Dimensions
TIG074E8-TL-H
SOT-28FL/ECH8
CASE 318BF
ISSUE O
Unit : mm
1: Emitter
2: Emitter
3: Emitter
4: Gate
5: Collector
6: Collector
7: Collector
8: Collector
Land Pattern Example
2.8
0.6
0.4
0.65
Ordering & Package Information
Device
Package
Shipping
memo
TIG074E8-TL-H
ECH8
3,000
pcs./reel
Pb-Free
and
Halogen Free
Packing Type: TL
Marking
ZF
LOT No.
TL
Electrical Connection
8
7
6
5
1
2
3
4
No. A2209-5/6
TIG074E8
Note on usage : TIG074E8 has protection diode between gate and emitter but handling it requires sufficient care
to be taken.
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PS No. A2209-6/6