50A02CH - ON Semiconductor

Ordering number : EN7487B
50A02CH
Bipolar Transistor
–50V, –0.5A, Low VCE(sat) PNP Single CPH3
http://onsemi.com
Applications
•
Low-frequency Amplifier, high-speed switching, small motor drive, muting circuit
Features
•
•
•
•
High collector current capability
Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=210mΩ [IC=0.5A, IB=50mA]
Low ON-resistance (Ron)
Halogen free conpliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
Unit
VCBO
VCEO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
VEBO
IC
ICP
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
PC
Tj
Storage Temperature
Tstg
--50
V
--50
V
--5
--500
V
mA
--1.0
A
700
mW
When mounted on ceramic substrate (600mm2×0.8mm)
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7015A-003
• Package
: CPH3
• JEITA, JEDEC
: SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel
0.6
2.9
50A02CH-TL-E
50A02CH-TL-H
0.15
Packing Type: TL
0.05
LOT No.
0.2
AX
3
1.6
2.8
Marking
0.9
0.2
0.6
TL
1
0.95
2
0.4
1 : Base
2 : Emitter
3 : Collector
Electrical Connection
3
CPH3
1
2
Semiconductor Components Industries, LLC, 2013
August, 2013
70412 TKIM/72110EA TKIM TC-00002407/O3103 TSIM TA-100637 No.7487-1/7
50A02CH
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Conditions
Ratings
min
typ
max
Unit
ICBO
IEBO
hFE
VCB= --40V, IE=0A
VEB= --4V, IC=0A
VCE= --2V, IC= --10mA
fT
Cob
VCE= --10V, IC= --50mA
VCB= --10V, f=1MHz
690
VCE(sat)
VBE(sat)
IC= --100mA, IB= --10mA
IC= --100mA, IB= --10mA
--60
--120
--0.9
--1.2
V(BR)CBO
V(BR)CEO
IC= --10μA, IE=0A
IC= --1mA, RBE=∞
--50
--50
V
V(BR)EBO
ton
IE= --10μA, IC=0A
--5
V
tstg
tf
See specified Test Circuit.
200
--100
nA
--100
nA
500
MHz
3.8
pF
mV
V
V
30
ns
170
ns
30
ns
Switching Time Test Circuit
IB1
PW=20μs
D.C. ≤1%
INPUT
OUTPUT
IB2
VR
50Ω
RB
RL
+
+
220μF
470μF
VBE=5V
VCC= --25V
IC=20IB1= --20IB2= --200mA
Ordering Information
Package
Shipping
memo
50A02CH-TL-E
Device
CPH3
3,000pcs./reel
Pb Free
50A02CH-TL-H
CPH3
3,000pcs./reel
Pb Free and Halogen Free
No.7487-2/7
50A02CH
IC -- VCE
VCE= --2V
A
A
--10m
--5mA
--300
--250
--2mA
--200
--1mA
--150
--500μA
--100
--500
--400
--300
Ta=75
°C
25°C
--25°C
--350
--15m
A
Collector Current, IC -- mA
--400
IC -- VBE
--600
--50m
--450
--40
m
A
A
A
mA
0m -25m --20
--3 -
Collector Current, IC -- mA
--500
--200
--200μA
--100
IB=0μA
0
--50
0
0
--100 --200 --300 --400 --500 --600 --700 --800 --900 --1000
Collector-to-Emitter Voltage, VCE -- mV
0
VCE= --2V
DC Current Gain, hFE
3
100
7
5
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
7
5
75
=
Ta
C
25°
3
2
3
5
C
5°
7 --10
2
3
5
7 --100
2
3
Collector Current, IC -- mA
IC / IB=20
5
7
IT05410
VCE(sat) -- IC
IC / IB=50
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
5
°C
--2
2
3
7
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
--1.2
IT05119
2
--10
--1.0
5 7--1000
IT05120
VCE(sat) -- IC
--1000
--1.0
--100
2
3
--1.0
--0.8
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Ta=75°C
25°C
--25°C
--0.6
VCE(sat) -- IC
3
7
5
--0.4
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
1000
--0.2
IT05118
--1000
3
2
--100
7
C
75°
Ta=
5
3
°C
25°C
2
--10
7
--1.0
5
--2
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
5
3
2
--100
75°C
Ta=
°C
--25
7
5
3
25°C
2
--10
--1.0
5 7--1000
IT05123
2
3
5 7 --10
2
3
5 7 --100
2
3
Cob -- VCB
10
Ta= --25°C
7
75°C
25°C
5
3
2
--1.0
2
3
5 7 --10
2
3
5 7 --100
Collector Current, IC -- mA
f=1MHz
Output Capacitance, Cob -- pF
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
IC / IB=20
--1.0
2
3
5 7--1000
IT05125
5 7--1000
IT05124
Collector Current, IC -- mA
VBE(sat) -- IC
2
7
7
5
3
2
1.0
--1.0
2
3
5
7
--10
2
3
Collector-to-Base Voltage, VCB -- V
5
7 --100
IT05122
No.7487-3/7
50A02CH
f T -- IC
7
Ron -- IB
1kΩ
f=1MHz
5
3
2
OUT
IN
1kΩ
3
2
IB
10
7
5
3
2
1.0
7
5
3
2
100
--1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
5 7--1000
IT05121
Collector Current, IC -- mA
PC -- Ta
800
Collector Dissipation, PC -- mW
100
7
5
VCE= --10V
ON Resistance, Ron -- Ω
Gain-Bandwidth Product, f T -- MHz
1000
700
0.1
--0.1
2
3
5
7
--1.0
2
Base Current, IB -- mA
3
5
7 --10
IT06093
M
ou
nt
600
500
ed
on
ac
er
am
ic
400
bo
ar
d
(6
00
300
m
m2
✕
0.
200
8m
100
m
)
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT05047
No.7487-4/7
50A02CH
Embossed Taping Specification
50A02CH-TL-E, 50A02CH-TL-H
No.7487-5/7
50A02CH
Outline Drawing
50A02CH-TL-E, 50A02CH-TL-H
Land Pattern Example
Mass (g) Unit
0.013 mm
* For reference
Unit: mm
2.4
1.4
0.6
0.95
0.95
No.7487-6/7
50A02CH
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PS No.7487-7/7