Ordering number : EN6077C CPH3107 Bipolar Transistor –15V, –6A, Low VCE(sat), PNP Single CPH3 http://onsemi.com Applications • Relay drivers, lamp drivers, motor drivers, flash Features • • • • • • Adoption of MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) High allowable power dissipation Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current (Pulse) VEBO IC ICP Base Current IB Collector Dissipation Junction Temperature PC Tj Storage Temperature Tstg Collector Current --15 V --15 V --5 V --6 A --9 A --1.2 A 0.9 W When mounted on ceramic substrate (600mm2×0.8mm) 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7015A-003 • Package : CPH3 • JEITA, JEDEC : SC-59, TO-236, SOT-23 • Minimum Packing Quantity : 3,000 pcs./reel CPH3107-TL-E 0.6 2.9 0.15 Packing Type: TL 0.05 LOT No. 0.2 AG 3 1.6 2.8 Marking 0.9 0.2 0.6 TL 1 0.95 2 0.4 1 : Base 2 : Emitter 3 : Collector CPH3 Electrical Connection 3 1 2 Semiconductor Components Industries, LLC, 2013 September, 2013 O1712 TKIM TC-00002828/61307EA TIIM TC-00000758/N1504 TSIM TB-00000299/71299TS (KOTO) TA-2031 No.6077-1/6 CPH3107 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage VCE= --2V, IC= --500mA VCE= --2V, IC= --500mA Base-to-Emitter Saturation Voltage Collector-to-Emitter Breakdown Voltage Turn-ON Time Storage Time Fall Time Unit max --0.1 μA --0.1 μA 200 560 140 MHz 82 IC= --3A, IB= --60mA IC= --10μA, IE=0A IC= --1mA, RBE=∞ V(BR)CBO V(BR)CEO Emitter-to-Base Breakdown Voltage typ VCB= --10V, f=1MHz IC= --3A, IB= --60mA VCE(sat) VBE(sat) Collector-to-Base Breakdown Voltage min VCB= --12V, IE=0A VEB= --4V, IC=0A fT Cob Output Capacitance Ratings Conditions pF --100 --150 --0.85 --1.2 mV V --15 V(BR)EBO ton IE= --10μA, IC=0A tstg tf See specified Test Circuit. V --15 V --5 V 30 ns 120 ns 14 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 RB VR 50Ω RL + + 100μF 470μF VBE=5V VCC= --5V IC=20IB1= --20IB2= --3A Ordering Information Shipping memo CPH3 3,000pcs./reel Pb Free mA --30mA --20mA --10mA --2.0 VCE= --2V --0.9 --0.8 --0.7 --0.6 --0.5 --0.4 --0.3 --25°C --10 --3.0 --40 Collector Current, IC -- A mA --8 0 0m -90m A A --4.0 A 0m --5 A 0m --6 A 0m --7 IC -- VBE --1.0 25°C IC -- VCE --5.0 Collector Current, IC -- A Package Ta=75°C Device CPH3107-TL-E --0.2 --1.0 --0.1 IB=0mA 0 0 --100 --200 --300 --400 Collector-to-Emitter Voltage, VCE -- mV --500 IT08011 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 Base-to-Emitter Voltage, VBE -- V --0.8 --0.9 IT08013 No.6077-2/6 CPH3107 hFE -- IC 1000 VCE= --2V Gain-Bandwidth Product, f T -- MHz DC Current Gain, hFE 5 Ta=75°C 25°C --25°C 2 100 7 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 3 2 100 7 5 3 2 2 3 5 7 --0.1 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2 100 7 5 3 2 3 5 7 --1.0 2 3 5 IT08017 VCE(sat) -- IC 3 5 2 Collector Current, IC -- A f=1MHz 7 Output Capacitance, Cob -- pF 5 10 --0.01 5 7 --10 IT08015 Cob -- VCB 1000 VCE= --2V 7 7 3 f T -- IC 1000 IC / IB=20 2 --100 7 5 °C 75 °C C 5° 25 --2 3 = Ta 2 --10 7 5 10 --1.0 2 3 5 7 2 --10 Collector-to-Base Voltage, VCB -- V 3 --0.01 3 3 5 7 --0.1 2 3 5 7 --1.0 2 5 7 --10 IT08021 VBE(sat) -- IC 3 IC / IB=50 IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 Collector Current, IC -- A VCE(sat) -- IC 5 2 IT08019 3 2 --100 = Ta 5 25°C --1000 °C 75 7 2 °C C 5° 25 --2 3 2 --10 Ta= --25°C 7 75°C 5 3 7 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A ICP= --9A 10m IC= --6A 10 DC --1.0 7 5 op era 0m 100μs 50 0μ s 1m s s s tio n 3 2 --0.1 7 5 3 2 Ta=25°C Single pulse Mounted on a ceramic board (600mm2✕0.8mm) --0.01 --0.1 2 3 5 7 --1.0 3 5 7 --0.1 2 3 5 Collector-to-Emitter Voltage, VCE 7 --10 2 -- V IT08027 2 3 5 7 --1.0 2 3 5 7 --10 IT08025 PC -- Ta 1.0 0.9 Collector Dissipation, PC -- W Collector Current, IC -- A 3 2 2 Collector Current, IC -- A ASO 2 --10 7 5 2 --0.01 5 7 --10 IT08023 M 0.8 ou nt ed on 0.6 ac er am ic bo ar 0.4 d (6 00 m 0.2 m2 ✕ 0. 8m m ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT08028 No.6077-3/6 CPH3107 Embossed Taping Specification CPH3107-TL-E No.6077-4/6 CPH3107 Outline Drawing CPH3107-TL-E Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No.6077-5/6 CPH3107 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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