ECH8315 Power MOSFET –30V, 25mΩ, –7.5A, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to low on resistance. This devices is suitable for applications with low on resistance requirements. Features Low On-Resistance 4V drive ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS compliance www.onsemi.com VDSS RDS(on) Max 25mΩ@ 10V ID Max 30V 44mΩ@ 4.5V 7.5A 49mΩ@ 4V Typical Applications Load Switch Protection Switch for Lithium-ion Battery Motor Driver ELECTRICAL CONNECTION P-Channel 8 7 6 5 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter Symbol Value 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain Unit Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS 20 V Drain Current (DC) ID 7.5 A Drain Current (Pulse) PW 10s, duty cycle 1% IDP 40 A Power Dissipation When mounted on ceramic substrate 2 (900mm 0.8mm) PD 1.5 W Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 2 3 PACKING TYPE : TL 4 MARKING JS Lot No. TL THERMAL RESISTANCE RATINGS Parameter Junction to Ambient When mounted on ceramic substrate 2 (900mm 0.8mm) Symbol RJA © Semiconductor Components Industries, LLC, 2015 April 2015 - Rev. 2 Value 83.3 1 Unit C/W ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Publication Order Number : ECH8315/D ECH8315 ELECTRICAL CHARACTERISTICS at Ta 25C (Note 2) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS VGS(th) gFS Gate Threshold Voltage Forward Transconductance Conditions Value min typ ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=16V, VDS=0V 30 VDS=10V, ID=1mA 1.2 VDS=10V, ID=3.5A 5 max Unit V 1 A 10 A 2.6 V 8.4 S RDS(on)1 RDS(on)2 ID=3.5A, VGS=10V 19 25 m ID=2A, VGS=4.5V 31 44 m RDS(on)3 Ciss ID=2A, VGS=4V 35 49 m Output Capacitance Coss VDS=10V, f=1MHz 200 pF Reverse Transfer Capacitance Crss 150 pF Turn-ON Delay Time Static Drain to Source On-State Resistance Input Capacitance 875 pF td(on) 8.1 ns Rise Time tr 33 ns Turn-OFF Delay Time td(off) 92 ns Fall Time tf 60 ns Total Gate Charge Qg 18 nC Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd See specified Test Circuit VDS=15V, VGS=10V, ID=7.5A 2.1 nC 4.7 nC VSD Forward Diode Voltage IS=7.5A, VGS=0V 0.82 1.2 V Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 0V --10V VDD= --15V VIN ID= --3.5A RL=4.3 VIN D VOUT PW=10s D.C.≤1% G ECH8315 P.G 50 S www.onsemi.com 2 ECH8315 www.onsemi.com 3 ECH8315 www.onsemi.com 4 ECH8315 PACKAGE DIMENSIONS unit : mm SOT-28FL / ECH8 CASE 318BF ISSUE O to 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain Recommended Soldering Footprint 7 : Drain 8 : Drain 2.8 0.6 0.4 0.65 ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) JS SOT-28FL / ECH8 (Pb-Free / Halogen Free) 3,000 / Tape & Reel ECH8315-TL-H ECH8315-TL-W † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the ECH8315 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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