MCH6331 Power MOSFET –30V, 98mΩ, –3.5A, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 4V drive • Pb-Free, Halogen Free and RoHS compliance • Ultra small package MCPH6 (2.0mm×2.1mm×0.85mmt) www.onsemi.com VDSS RDS(on) Max 98mΩ@ −10V ID Max −30V 171mΩ@ −4.5V −3.5A 199mΩ@ −4V Typical Applications • Load Switch ELECTRICAL CONNECTION P-Channel SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2) Parameter Symbol 1, 2, 5, 6 Value Unit Drain to Source Voltage VDSS −30 Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID −3.5 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP −14 A V 4 Power Dissipation When mounted on ceramic substrate 2 (1200mm × 0.8mm) PD 1.5 W Junction Temperature Tj 150 °C MARKING LOT No. YF TL ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. THERMAL RESISTANCE RATINGS Parameter Symbol Value RθJA © Semiconductor Components Industries, LLC, 2015 July 2015 - Rev. 2 PACKING TYPE : TL 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain LOT No. Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : This product is designed to “ESD immunity<200V*”, so please take care when handling. *Machine Model Junction to Ambient When mounted on ceramic substrate 2 (1200mm × 0.8mm) 3 83.3 1 Unit °C/W Publication Order Number : MCH6331/D MCH6331 ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 3) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS VGS(th) gFS Gate Threshold Voltage Forward Transconductance Conditions Value min ID=−1mA, VGS=0V VDS=−30V, VGS=0V VGS=±16V, VDS=0V −30 VDS=−10V, ID=−1mA −1.2 VDS=−10V, ID=−1.5A 1.68 typ max Unit V −1 μA ±10 μA −2.6 V 2.8 S RDS(on)1 RDS(on)2 ID=−1.5A, VGS=−10V 75 98 mΩ ID=−0.75A, VGS=−4.5V 122 171 mΩ RDS(on)3 Ciss ID=−0.75A, VGS=−4V 142 199 mΩ Output Capacitance Coss VDS=−10V, f=1MHz 65 pF Reverse Transfer Capacitance Crss 46 pF Turn-ON Delay Time td(on) 5.4 ns Rise Time tr 12 ns Turn-OFF Delay Time td(off) 26 ns Fall Time tf 19 ns 5.0 nC Static Drain to Source On-State Resistance Input Capacitance Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd 250 See specified Test Circuit VDS=−10V, VGS=−10V, ID=−3.5A pF 1.0 nC 1.2 nC VSD Forward Diode Voltage IS=−3.5A, VGS=0V −0.86 −1.5 V Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 0V --10V VDD= --15V VIN ID= --1.5A RL=10Ω VIN D PW=10μs D.C.≤1% VOUT G P.G MCH6331 50Ω S www.onsemi.com 2 MCH6331 www.onsemi.com 3 MCH6331 www.onsemi.com 4 MCH6331 PACKAGE DIMENSIONS unit : mm SC-88FL / MCPH6 CASE 419AS ISSUE O 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Recommended Soldering Footprint 2.1 0.6 0.4 0.65 0.65 ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) YF SC-88FL / MCPH6 (Pb-Free / Halogen Free) 3,000 / Tape & Reel MCH6331-TL-H MCH6331-TL-W † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the MCH6331 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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