CPH3348 Power MOSFET –12V, 70mΩ, –3A, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Low On-Resistance 1.8V drive Pb-Free and RoHS compliance Halogen Free compliance : CPH3348-TL-W www.onsemi.com VDSS RDS(on) Max 70mΩ@ 4.5V ID Max 12V 115mΩ@ 2.5V 3A 215mΩ@ 1.8V Typical Applications Load Switch DC/DC Converter ELECTRICAL CONNECTION P-Channel SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1, 2) Parameter Symbol 3 Value Unit Drain to Source Voltage VDSS 12 V Gate to Source Voltage VGSS 10 V Drain Current (DC) ID 3 A Drain Current (Pulse) PW 10s, duty cycle 1% IDP 12 A Power Dissipation When mounted on ceramic substrate 2 (1200mm 0.8mm) PD 1.0 W Junction Temperature Tj 150 C LOTNo. MARKING WE PACKING TYPE : TL TL ORDERING INFORMATION THERMAL RESISTANCE RATINGS Parameter Symbol Value RJA © Semiconductor Components Industries, LLC, 2015 July 2015 - Rev. 2 1 : Gate 2 : Source 3 : Drain 2 Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : This product is designed to “ESD immunity<200V*”, so please take care when handling. *Machine Model Junction to Ambient When mounted on ceramic substrate 2 (1200mm 0.8mm) 1 Unit 125 1 See detailed ordering and shipping information on page 5 of this data sheet. C/W Publication Order Number : CPH3348/D CPH3348 ELECTRICAL CHARACTERISTICS at Ta 25C (Note 3) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS VGS(th) gFS Gate Threshold Voltage Forward Transconductance Conditions Value min ID=1mA, VGS=0V VDS=12V, VGS=0V VGS=8V, VDS=0V 12 VDS=6V, ID=1mA 0.4 typ max Unit V 10 A 10 A 1.4 V VDS=6V, ID=1.5A 4.3 RDS(on)1 RDS(on)2 ID=1.5A, VGS=4.5V 54 70 m ID=0.8A, VGS=2.5V 80 115 m RDS(on)3 Ciss ID=0.3A, VGS=1.8V 125 215 m Output Capacitance Coss VDS=6V, f=1MHz 145 pF Reverse Transfer Capacitance Crss 100 pF Turn-ON Delay Time td(on) 8.8 ns Rise Time tr 80 ns Turn-OFF Delay Time td(off) 41 ns Fall Time tf 50 ns 5.6 nC Static Drain to Source On-State Resistance Input Capacitance Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd 405 See specified Test Circuit VDS=6V, VGS=4.5V, ID=3A S pF 0.7 nC 1.6 nC VSD Forward Diode Voltage IS=3A, VGS=0V 0.85 1.2 V Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 0V --4.5V VDD= --6V VIN ID= --1.5A RL=4 VIN VOUT D PW=10s D.C.≤1% G CPH3348 P.G 50 S www.onsemi.com 2 CPH3348 www.onsemi.com 3 CPH3348 www.onsemi.com 4 CPH3348 PACKAGE DIMENSIONS unit : mm CPH3 CASE 318BA ISSUE O Recommended Soldering Footprint 1 : Gate 2 : Source 0.6 2.4 1.4 3 : Drain 0.95 0.95 ORDERING INFORMATION Device Marking CPH3348-TL-E WE CPH3348-TL-W Package CPH3 SC-59, SOT-23, TO-236 (Pb-Free) CPH3 SC-59, SOT-23, TO-236 (Pb-Free / Halogen Free) Shipping (Qty / Packing) 3,000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the CPH3348 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.onsemi.com 5