SCH1330 Power MOSFET –20V, 241mΩ, –1.5A, Single P-Channel This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features • Low On-Resistance • High Speed Switching • 1.8V drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance • Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt) www.onsemi.com VDSS RDS(on) Max 241mΩ@ −4.5V ID Max −20V 385mΩ@ −2.5V −1.5A 615mΩ@ −1.8V ELECTRICAL CONNECTION P-Channel Typical Applications • Battery Switch • Load Switch 1, 2, 5, 6 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage VDSS −20 Gate to Source Voltage VGSS ID ±10 V −1.5 A Drain Current (DC) V IDP −6 A Power Dissipation When mounted on ceramic substrate 2 (900mm × 0.8mm) PD 1 W Junction Temperature Tj 150 °C MARKING LOT No. YF TL ORDERING INFORMATION THERMAL RESISTANCE RATINGS Parameter Symbol Value RθJA © Semiconductor Components Industries, LLC, 2015 August 2015 - Rev. 2 4 PACKING TYPE : TL Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Junction to Ambient When mounted on ceramic substrate 2 (900mm × 0.8mm) 3 LOT No. Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Unit 125 1 See detailed ordering and shipping information on page 5 of this data sheet. °C/W Publication Order Number : SCH1330/D SCH1330 ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS VGS(th) gFS Gate Threshold Voltage Forward Transconductance Conditions Value min ID=−1mA, VGS=0V VDS=−20V, VGS=0V VGS=±8V, VDS=0V −20 VDS=−10V, ID=−1mA −0.4 VDS=−10V, ID=−750mA 1.14 typ max Unit V −1 μA ±10 μA −1.4 V 1.9 S RDS(on)1 RDS(on)2 ID=−750mA, VGS=−4.5V 185 241 mΩ ID=−300mA, VGS=−2.5V 275 385 mΩ RDS(on)3 Ciss ID=−100mA, VGS=−1.8V 410 615 mΩ Output Capacitance Coss VDS=−10V, f=1MHz 26 pF Reverse Transfer Capacitance Crss 20 pF Turn-ON Delay Time td(on) 5.3 ns Rise Time tr Turn-OFF Delay Time td(off) Fall Time tf Static Drain to Source On-State Resistance Input Capacitance Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd 120 See specified Test Circuit VDS=−10V, VGS=−4.5V, ID=−1.5A pF 9.7 ns 16 ns 14 ns 1.7 nC 0.28 nC 0.47 nC VSD Forward Diode Voltage IS=−1.5A, VGS=0V −0.89 −1.2 V Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 0V --4.5V VDD= --10V VIN ID= --750mA RL=13.3Ω VIN D PW=10μs D.C.≤1% VOUT G P.G 50Ω SCH1330 S www.onsemi.com 2 SCH1330 www.onsemi.com 3 SCH1330 www.onsemi.com 4 SCH1330 PACKAGE DIMENSIONS unit : mm SOT-563 / SCH6 CASE 463AB ISSUE O 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Recommended Soldering Footprint 1.4 0.4 0.3 0.5 0.5 ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) YF SOT-563 / SCH6 (Pb-Free / Halogen Free) 5,000 / Tape & Reel SCH1330-TL-H SCH1330-TL-W † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the SCH1330 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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