SCH1436 Power MOSFET 30V, 180mΩ, 1.8A, Single N-Channel This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features • Low On-Resistance • 4V drive • Low Capacitance • Pb-Free, Halogen Free and RoHS compliance • Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt) www.onsemi.com VDSS RDS(on) Max 180mΩ@ 10V 30V ID Max 1.8A 330mΩ@ 4V ELECTRICAL CONNECTION N-Channel Typical Applications • Load Switch 1, 2, 5, 6 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2) Parameter Symbol Value Unit VDSS 30 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID 1.8 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP 7.2 A Power Dissipation When mounted on ceramic substrate 2 (900mm × 0.8mm) PD 0.8 W Junction Temperature Tj 150 °C 3 4 PACKING TYPE : TL LOT No. Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : This product is designed to “ESD immunity<200V*”, so please take care when handling. *Machine Model MARKING ZM LOT No. Drain to Source Voltage 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain TL ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. THERMAL RESISTANCE RATINGS Parameter Junction to Ambient When mounted on ceramic substrate 2 (900mm × 0.8mm) Symbol RθJA © Semiconductor Components Industries, LLC, 2015 August 2015 - Rev. 3 Value 156.2 1 Unit °C/W Publication Order Number : SCH1436/D SCH1436 ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 3) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current Forward Transconductance IGSS VGS(th) gFS Static Drain to Source On-State Resistance RDS(on)1 RDS(on)2 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Gate Threshold Voltage Conditions Value min ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V 30 VDS=10V, ID=1mA 1.2 typ max Unit V 1 μA ±10 μA 2.6 V VDS=10V, ID=0.9A 1.1 S ID=0.9A, VGS=10V 135 180 mΩ ID=0.5A, VGS=4V 230 330 mΩ 88 pF 19 pF Crss 11 pF td(on) 3.4 ns Rise Time tr 4.0 ns Turn-OFF Delay Time td(off) 10.4 ns Fall Time tf 4.2 ns Total Gate Charge Qg 2.0 nC Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd VDS=10V, f=1MHz See specified Test Circuit VDS=10V, VGS=10V, ID=1.8A 0.33 nC 0.29 nC VSD Forward Diode Voltage IS=1.8A, VGS=0V 0.86 1.2 V Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 10V 0V VDD=15V VIN ID=0.9A RL=16.7Ω VOUT VIN D PW=10μs D.C.≤1% G P.G 50Ω S SCH1436 www.onsemi.com 2 SCH1436 www.onsemi.com 3 SCH1436 www.onsemi.com 4 SCH1436 PACKAGE DIMENSIONS unit : mm SOT-563 / SCH6 CASE 463AB ISSUE O 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Recommended Soldering Footprint 1.4 0.4 0.3 0.5 0.5 ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) ZM SOT-563 / SCH6 (Pb-Free / Halogen Free) 5,000 / Tape & Reel SCH1436-TL-H SCH1436-TL-W † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the SCH1436 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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