NDPL180N10B Power MOSFET 100V, 3.0mΩ, 180A, N-Channel www.onsemi.com VDSS Features • Ultra Low On-Resistance • Low Gate Charge • High Speed Switching • 100% Avalanche Test • Pb-Free and RoHS Compliance RDS(on) Max 3.0mΩ@ 15V 100V N-Channel Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Unit Value VDSS 100 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID 180 A Drain Current (DC) Limited by Package IDL 100 A IDP 600 A Drain Current (Pulse) PW≤10μs, duty cycle≤1% Power Dissipation Tc=25°C 200 °C −55 to +175 °C 100 A EAS 451 mJ TL 260 °C Storage Temperature Tstg Source Current (Body Diode) IS Avalanche Energy (Single Pulse) *1 2 1 : Gate 2 : Drain 3 : Source 1 W 175 Tj Purposes, 3mm from Case for 10 Seconds 2.1 PD Junction Temperature Lead Temperature for Soldering 180A 3.5mΩ@ 10V Electrical Connection Specifications Drain to Source Voltage ID Max 3 Marking 180N10 B Thermal Resistance Ratings Parameter Symbol Value Junction to Case Steady State RθJC 0.75 Junction to Ambient *2 RθJA 71.4 Unit 1 2 3 LOT No. TO-220-3L °C/W Note: *1 VDD=48V, L=100μH, IAV=70A (Fig.1) *2 Insertion mounted Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 3 1 Publication Order Number : NDPL180N10B/D NDPL180N10B Electrical Characteristics at Ta = 25°C Parameter Symbol Value Conditions min typ Unit max Drain to Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=100V, VGS=0V 10 μA Gate to Source Leakage Current IGSS VGS=±20V, VDS=0V ±200 nA Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA 4 V Forward Transconductance gFS VDS=10V, ID=50A 150 RDS(on)1 ID=50A, VGS=15V 2.5 3.0 mΩ RDS(on)2 ID=50A, VGS=10V 2.7 3.5 mΩ Static Drain to Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time tr Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Forward Diode Voltage 100 V 2 S 6,950 pF 3,000 pF Crss 15 pF td(on) 95 ns 320 ns 185 ns VDS=50V, f=1MHz See Fig.2 130 ns 95 nC VDS=48V, VGS=10V, ID=100A 31 nC VSD IS=100A, VGS=0V 0.9 Reverse Recovery Time trr See Fig.3 150 ns Reverse Recovery Charge Qrr IS=100A, VGS=0V, VDD=50V, di/dt=100A/μs 580 nC 26 nC 1.5 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Unclamped Inductive Switching Test Circuit Fig.3 Reverse Recovery Time Test Circuit NDPL180N10B D L G S VDD Driver MOSFET www.onsemi.com 2 Fig.2 Switching Time Test Circuit NDPL180N10B www.onsemi.com 3 NDPL180N10B www.onsemi.com 4 NDPL180N10B Package Dimensions NDPL180N10BG TO-220, 3-Lead / TO-220-3L CASE 221AU ISSUE O unit : mm 1: Gate 2: Drain 3: Source ORDERING INFORMATION Device NDPL180N10BG Package Shipping Note TO-220, 3-Lead TO-220-3L 50 pcs. / Tube Pb-Free Note on usage : Since the NDPL180N10B is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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