SCH1433 Power MOSFET 20V, 64mΩ, 3.5A, Single N-Channel This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features • Low On-Resistance • Low Capacitance • 1.8V drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance • Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt) www.onsemi.com VDSS 20V RDS(on) Max 64mΩ@ 4.5V ID Max 95mΩ@ 2.5V 3.5A 149mΩ@ 1.8V ELECTRICAL CONNECTION N-Channel Typical Applications • Load Switch 1, 2, 5, 6 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage VDSS 20 Gate to Source Voltage VGSS ID ±10 V 3.5 A Drain Current (DC) V IDP 14 A Power Dissipation When mounted on ceramic substrate 2 (900mm × 0.8mm) PD 0.8 W Junction Temperature Tj 150 °C 3 4 PACKING TYPE : TL LOT No. Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING ZJ LOT No. Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain TL ORDERING INFORMATION THERMAL RESISTANCE RATINGS Parameter Junction to Ambient When mounted on ceramic substrate 2 (900mm × 0.8mm) Symbol RθJA © Semiconductor Components Industries, LLC, 2015 September 2015 - Rev. 2 Value 156.2 1 Unit See detailed ordering and shipping information on page 5 of this data sheet. °C/W Publication Order Number : SCH1435/D SCH1433 ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS VGS(th) gFS Gate Threshold Voltage Forward Transconductance Conditions Value min ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V 20 VDS=10V, ID=1mA 0.4 VDS=10V, ID=1.5A 1.68 typ max Unit V 1 μA ±10 μA 1.3 V 2.8 S RDS(on)1 RDS(on)2 ID=1.5A, VGS=4.5V 49 64 mΩ ID=1A, VGS=2.5V 68 95 mΩ RDS(on)3 Ciss ID=0.5A, VGS=1.8V 99 149 mΩ Output Capacitance Coss VDS=10V, f=1MHz 65 pF Reverse Transfer Capacitance Crss 50 pF Turn-ON Delay Time td(on) 6.2 ns Rise Time tr 19 ns Turn-OFF Delay Time td(off) 30 ns Fall Time tf 28 ns 2.8 nC Static Drain to Source On-State Resistance Input Capacitance Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd 260 See specified Test Circuit VDS=15V, VGS=4.5V, ID=3.5A pF 0.6 nC 0.9 nC VSD Forward Diode Voltage IS=3.5A, VGS=0V 0.85 1.2 V Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 4.5V 0V VDD=10V VIN ID=1.5A RL=6.67Ω VOUT VIN D PW=10μs D.C.≤1% G P.G 50Ω S SCH1433 \ www.onsemi.com 2 SCH1433 www.onsemi.com 3 SCH1433 www.onsemi.com 4 SCH1433 PACKAGE DIMENSIONS unit : mm SOT-563 / SCH6 CASE 463AB ISSUE O 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Recommended Soldering Footprint 1.4 0.4 0.3 0.5 0.5 ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) ZJ SOT-563 / SCH6 (Pb-Free / Halogen Free) 5,000 / Tape & Reel SCH1433-TL-H SCH1433-TL-W † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the SCH1433 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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