NDBA180N10B Power MOSFET 100V, 2.8mΩ, 180A, N-Channel Features www.onsemi.com VDSS • Ultra Low On-Resistance • Low Gate Charge • High Speed Switching • 100% Avalanche Tested • Pb-Free, Halogen Free and RoHS Compliance RDS(on) Max 2.8mΩ@ 15V 100V 3.3mΩ@ 10V N-Channel 2,4 Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage VDSS 100 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID 180 A Drain Current (DC) Limited by Package IDL 100 A IDP 600 A PD 200 W Junction Temperature Tj 175 °C Storage Temperature Tstg −55 to +175 °C Source Current (Body Diode) IS 100 A Avalanche Energy (Single Pulse) *1 EAS 451 mJ TL 260 °C PW≤10μs, duty cycle≤1% Power Dissipation Tc=25°C Lead Temperature for Soldering Purposes, 3mm from Case for 10 Seconds 180A Electrical Connection Specifications Drain Current (Pulse) ID Max Thermal Resistance Ratings Parameter Symbol Value Junction to Case Steady State RθJC 0.75 Junction to Ambient *2 RθJA 62.5 Unit 1 : Gate 2 : Drain 3 : Source 4 : Drain 1 3 Marking Packing Type:TL °C/W Note : *1 VDD=48V, L=100μH, IAV=70A (Fig.1) *2 Surface mounted on FR4 board using recommended footprint Stresses Stresses exceeding exceeding those those listed listed in in the the Maximum Maximum Ratings Ratings table table may may damage damage the the device. device. IfIf any any of of these these limits limits are are exceeded, exceeded, device device functionality functionality should should not not be be assumed, assumed, damage damage may may occur occur and and reliability reliability may may be be affected. affected. ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 3 1 Publication Order Number : NDBA180N10B/D NDBA180N10B Electrical Characteristics at Ta = 25°C Parameter Symbol Value Conditions min typ Unit max Drain to Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=100V, VGS=0V 100 10 μA V Gate to Source Leakage Current IGSS VGS=±20V, VDS=0V ±200 nA 4 V Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA Forward Transconductance gFS VDS=10V, ID=50A 150 RDS(on)1 ID=50A, VGS=15V 2.3 2.8 mΩ RDS(on)2 ID=50A, VGS=10V 2.5 3.3 mΩ Static Drain to Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time tr Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Forward Diode Voltage 2 S 6,950 pF 3,000 pF Crss 15 pF td(on) 95 ns 320 ns 185 ns VDS=50V, f=1MHz See Fig.2 130 ns 95 nC VDS=48V, VGS=10V, ID=100A 31 nC VSD IS=100A, VGS=0V 0.9 Reverse Recovery Time trr See Fig.3 150 ns Reverse Recovery Charge Qrr IS=100A, VGS=0V, VDD=50V, di/dt=100A/μs 580 nC 26 nC 1.5 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Unclamped Inductive Switching Test Circuit Fig.3 Reverse Recovery Time Test Circuit www.onsemi.com 2 Fig.2 Switching Time Test Circuit NDBA180N10B www.onsemi.com 3 NDBA180N10B www.onsemi.com 4 NDBA180N10B Package Dimensions NDBA180N10BT4H D2PAK-3 (TO-263, 3-LEAD) CASE 418AJ ISSUE B unit : mm www.onsemi.com 5 NDBA180N10B ORDERING INFORMATION Device NDBA180N10BT4H Package Shipping Note D2PAK-3 (TO-263, 3-LEAD) 800 pcs. / Tape & Reel Pb-Free and Halogen Free † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the NDBA180N10B is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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