Ordering number : ENA1624B SFT1431 Power MOSFET http://onsemi.com 35V, 25mΩ,11A, Single N-Channel Features Electrical Connection • Low On-Resistance • High Speed Switching • Low Gate Charge N-Channel • ESD Diode-Protected Gate • Pb-free and RoHS Compliance 2,4 Specifications 1 Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage VDSS 35 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID 11 A IDP 44 A Drain Current PW≤10μs, duty cycle≤1% Power Dissipation Tc=25°C 1.0 W 15 W 150 °C −55 to +150 °C PD Junction Temperature Tj Storage Temperature Tstg 3 Packing Type:TL Marking T1431 LOT No. TL 4 4 Thermal Resistance Ratings Parameter Junction to Case Steady State Junction to Ambient * 1 Symbol Value 1 Unit RθJC 8.33 RθJA 125 °C/W 1 2 3 IPAK(TP) 2 3 DPAK(TP-FA) Note : *1 Insertion mounted Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2014 September, 2014 91014 TKIM TC-00003150/60612 TKIM/D0209PA TKIM TC-00002143 No.A1624-1/6 SFT1431 Electrical Characteristics at Ta = 25°C Value Parameter Symbol Conditions Unit min Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=35V, VGS=0V Gate to Source Leakage Current IGSS VGS=±16V, VDS=0V typ max 35 V μA ±10 μA 2.6 V Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA Forward Transconductance gFS VDS=10V, ID=5.5A 5 RDS(on)1 ID=5.5A, VGS=10V 19 25 mΩ RDS(on)2 ID=3A, VGS=4.5V 28 39.5 mΩ RDS(on)3 ID=3A, VGS=4V 35 49 mΩ Static Drain to Source On-State Resistance 1.2 1 S Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) 12 ns Rise Time tr 40 ns Turn-OFF Delay Time td(off) 60 ns Fall Time tf 36 ns Total Gate Charge Qg 17.3 nC Gate to Source Charge Qgs 3.2 nC Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD VDS=20V, f=1MHz 960 pF 130 pF 84 pF See specified Test Circuit. VDS=20V, VGS=10V, ID=11A 3.6 IS=11A, VGS=0V 0.88 nC 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 10V 0V VDD=15V VIN ID=5.5A RL=2.7Ω VIN D PW=10μs D.C.≤1% VOUT G P.G 50Ω SFT1431 S No.A1624-2/6 SFT1431 No.A1624-3/6 SFT1431 No.A1624-4/6 SFT1431 Package Dimensions SFT1431-TL-E/ SFT1431-TL-W DPAK/TP-FA unit : mm 4 1 2 3 1:Gate 2:Drain 3:Source 4:Drain Recommended Soldering Footprint 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No.A1624-5/6 SFT1431 Package Dimensions SFT1431-E/ SFT1431-W IPAK/TP Unit : mm 4 1 2 3 1:Gate 2:Drain 3:Source 4:Drain Ordering & Package Information Device SFT1431-E SFT1431-W SFT1431-TL-E SFT1431-TL-W Package Shipping IPAK(TP) SC-64,TO-251 500pcs. / bag DPAK(TP-FA) SC-63,TO-252 700pcs. / reel Note Pb-Free Pb-Free and Halogen Free Pb-Free Pb-Free and Halogen Free Note on usage : Since the SFT1431 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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